Datasheet BLF175 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF175

HF/VHF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.

The transistor has a 4-lead, SOT123
flange envelope, with a ceramic cap.
All leads are isolated from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to the 'General' section for further
information.

PIN CONFIGURATION

ok, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

PINNING - SOT123

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common source test circuit.

h

(MH

f

)

Z

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

P

(dB)

η

(%)

D

d

(dB)

class-A 28 50 800 8 (PEP) > 24 −<−40
class-AB 28 50 150 30 (PEP) typ. 24 typ. 40

typ. −35

(note 1)

CW, class-B 108 50 30 30 typ. 20 typ. 65 −

Note

1. 2-tone efficiency.

3

September 1992 2

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 110 V
gate-source voltage − 20 V
DC drain current − 4A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

R

th j-mb

R

th mb-h

10

handbook, halfpage

I

D

(A)

1

−1

10

thermal resistance from junction to mounting base Tmb = 25 °C; P
thermal resistance from mounting base to heatsink Tmb = 25 °C; P

MRA905

(1)

110

(2)

VDS (V)

2

10

100

handbook, halfpage

P

tot

(W)

80

60

40

20

0

0 40 80 160

(2)

(1)

THERMAL

RESISTANCE

= 68 W 2.6 K/W

tot

= 68 W 0.3 K/W

tot

MGP063

120

T

(°C)

h

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

DS(on)

.

Fig.2 DC SOAR.

September 1992 3

(1) Continuous operation.
(2) Short-time operation during mismatch.

Fig.3 Power/temperature derating curves.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 10 mA; VGS = 0 110 −− V
drain-source leakage current VGS = 0; VDS = 50 V −−100 µA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 10 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 1 A; VDS = 10 V 1.1 1.6 − S
drain-source on-state resistance ID = 1 A; VGS = 10 V − 0.75 1.5 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 5.5 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 130 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 36 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 3.7 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

10

VDS= 10 V.

−2

−1

10

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP064

GS

MGP065

(V)

handbook, halfpage

1

6

I

D

(A)

4

2

0

0

VDS= 10 V; Tj=25°C.

510

V

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

1.5

handbook, halfpage

R

DS(on)

(Ω)

1

0.5

0

0 50 100 150

ID= 1 A; VGS= 10 V.

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP066

400

handbook, halfpage

C

(pF)

300

200

100

0

0

VGS= 0; f = 1 MHz.

C

is

C

os

10 50

20 30 40

MGP067

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

150

handbook, halfpage

C

rs

(pF)

100

50

0

0

VGS= 0; f = 1 MHz.

10 50

20 30 40

V

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MGP068

DS

(V)

September 1992 5

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

APPLICATION INFORMATION FOR CLASS-A OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source circuit.
f

= 28.000 MHz; f2 = 28.001 MHz.

1

= 0.3 K/W; unless otherwise specified.

th mb-h

P

(W)

L

f

(MHz)

V

(V)

DS

I

DQ

(mA)

G

(dB)

0 to 8 (PEP) 28 50 800 > 24

typ. 28

d

P

3

(dB)

(note 1)

>−40

typ. −44

d

5

(dB)

(note 1)

<−40

typ. −64

R

(Ω)

24
24

GS

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

40

handbook, halfpage

G

p

(dB)

30

20

MGP069

d

(dB)

−20

−40

0

3

handbook, halfpage

MGP070

10

0

0 5 10 20

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.

15

PL (W) PEP

Fig.9 Power gain as a function of load power,

typical values.

September 1992 6

−60

−80

0 5 10 20

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.

15

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power, typical values.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

40

handbook, halfpage

G

p

(dB)

30

20

10

0

01020 40

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1− f2= 1 MHz.

30

f (MHz)

Fig.11 Power gain as a function of frequency,

typical values.

MGP071

30

MGP072

f (MHz)

−20

handbook, halfpage

d

3

(dB)

−40

−60

01020 40

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1− f2= 1 MHz.

Fig.12 Third order intermodulation distortion as a

function of frequency, typical values.

+V

R2

R1

L1

C3

G

handbook, full pagewidth

f = 28 MHz.

50 Ω
input

C1

T1

C2

Fig.13 Test circuit for class-A operation.

September 1992 7

C4

D.U.T.

C5

L4

C9

L2

C6

C7

R3

L3

C8

+V

MGP073

D

50 Ω
output

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

List of components (class-A test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 multilayer ceramic chip capacitor

(note 1)
C2 multilayer ceramic chip capacitor 3 × 10 nF 2222 852 47103
C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C8 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109
C9 multilayer ceramic chip capacitor

(note 1)
L1 4 turns enamelled 0.6 mm copper

wire

L2 36 turns enamelled 0.7 mm copper

wire wound on a rod grade 4B1

Ferroxcube drain choke
L3 grade 3B Ferroxcube wideband RF

choke
L4 8 turns enamelled 1 mm copper wire 189 nH length 9.5 mm;

R1 0.4 W metal film resistor 24 Ω
R2 0.4 W metal film resistor 1500 Ω
R3 0.4 W metal film resistor 10 Ω
T1 4 : 1 transformer; 18 turns twisted

pair of 0.25 mm copper wire with

10 twists per cm, wound on a grade

4C6 toroidal core

39 pF

24 pF

86 nH length 3.3 mm;

int. dia. 5 mm;
leads 2 x 2 mm

20 µH length 30 mm;

int. dia. 5 mm

int. dia. 5 mm;
leads 2 x 3 mm

dimensions
9 x 6 x 3 mm

4330 030 30031

4312 020 36640

4322 020 97171

Note

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

September 1992 8

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, full pagewidth

mounting screw

strap

100

90

strap

L3

+V

R3

DD

C8

L4

C9

MGP074

+V

G

L1

C3

R1

T1

C2

C1

R2

Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two
edges and under the source contacts.

C6

L2

C7

C5

C4

Fig.14 Component layout for 28 MHz class-A test circuit.

September 1992 9

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

APPLICATION INFORMATION FOR CLASS-AB OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source circuit.
f

= 28.000 MHz; f2 = 28.001 MHz.

1

= 0.3 K/W; unless otherwise specified.

th mb-h

P

(W)

L

f

(MHz)

V

(V)

DS

I

DQ

(mA)

G

P

(dB)

30 (PEP) 28 50 150 typ. 24 typ. 40

(note 2)

Notes

1. Stated figures are maximum values encountered at
any driving level between the specified value of PEP
and are referred to the according level of either the
equal amplified tones. Related to the according peak
envelope power these figures should be decreased by
6 dB.

2. 2-tone efficiency.

Ruggedness in class-AB operation

The BLF175 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
P

= 30 W single tone under the following conditions:

L

VDS = 50 V; f = 28 MHz.

28

handbook, halfpage

G

p

(dB)

26

MGP076

60

handbook, halfpage

η

D

(%)

50

η

(%)

d

D

3

(dB)

(note 1)

d

5

(dB)

(note 1)

R

(Ω)

GS

typ. −35 typ. −40 22

MGP077

24

22

20

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

PL (W) PEP

Fig.15 Power gain as a function of load power,

typical values.

September 1992 10

40

30

20

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

PL (W) PEP

Fig.16 Two tone efficiency as a function of load

power, typical values.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, halfpage

0

d

3

(dB)

−20

−40

−60

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

MGP078

PL (W) PEP

Fig.17 Third order intermodulation distortion as a

function of load power, typical values.

handbook, halfpage

0

d

5

(dB)

−20

−40

−60

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

MGP079

PL (W) PEP

Fig.18 Fifth order intermodulation distortion as a

function of load power, typical values.

handbook, full pagewidth

50 Ω

output

f = 28 MHz.

C1

C2

C3

C4

R2

L1

+V

L2

R1

C5

G

D.U.T.

Fig.19 Test circuit for class-AB operation.

September 1992 11

C6

C10

L3

C7

L5

L4

R3

L6

C8

C11

C9

C12

output

+V

D

MGP080

50 Ω

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C10 multilayer ceramic chip capacitor

(note 1)
C2, C4, C8, C11 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor

(note 1)
C5, C6, C9 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor

(note 1)
C12 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109
L1 9 turns enamelled 1 mm copper wire 280 nH length 11 mm;

L2, L3 stripline (note 2) 30 Ω length 10 mm;

L4 14 turns enamelled 1 mm copper

wire

L5 10 turns enamelled 1 mm copper

wire

L6 grade 3B Ferroxcube wideband RF

choke
R1 0.4 W metal film resistor 22 Ω
R2 0.4 W metal film resistor 1 MΩ
R3 0.4 W metal film resistor 10 Ω

62 pF

51 pF

10 pF

int. dia. 6 mm;
leads 2 x 4 mm

width 6 mm

1650 nH length 20 mm;

int. dia. 12 mm;
leads 2 x 2 mm

380 nH length 13 mm;

int. dia. 7 mm;
leads 2 x 3 mm

4312 020 36640

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

September 1992 12

= 4.5),

r

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, full pagewidth

strap

mounting screw

C2 C4

150

strap

rivet

R3

C9

R2

C5

R1

L1

L2 L3

C3C1

C6

L6

L4

L5

C7

C12

C8 C11

strap

70

C10

Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two
edges and under the source contacts.

Dimensions in mm.

Fig.20 Component layout for 28 MHz class-AB test circuit.

September 1992 13

MGP081

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

30

MGP083

f (MHz)

30

handbook, halfpage

Z

i

(Ω)

20

10

0

−10

−20

01020 40

Class-AB operation; VDS= 50 V; IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

r

i

x

i

Fig.21 Input impedance as a function of frequency

(series components), typical values.

50

handbook, halfpage

Z

L

(Ω)

40

30

20

10

0

0102030

Class-AB operation; VDS= 50 V; IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

R

L

X

L

MGP084

f (MHz)

Fig.22 Load impedance as a function of frequency

(series components), typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0 102030

Class-AB operation; VDS= 50 V; IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

f (MHz)

Fig.23 Power gain as a function of frequency,

typical values.

MGP085

September 1992 14

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

P

(dB)

η

(%)

D

R

(Ω)

CW, class-B 108 50 30 30 typ. 20 typ. 65 10

10

handbook, halfpage

Z

i

(Ω)

5

0

MGP086

r

i

x

i

50

handbook, halfpage

Z

L

(Ω)

40

30

20

10

X

L

R

L

MGP087

GS

−5
0

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

100

f (MHz)

200

Fig.24 Input impedance as a function of frequency

(series components), typical values.

0

0 200

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

100

f (MHz)

Fig.25 Load impedance as a function of frequency

(series components), typical values.

September 1992 15

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

100

f (MHz)

Fig.26 Power gain as a function of frequency,

typical values.

MGP088

200

September 1992 16

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

1

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

w

1

3

9.78

9.39

0.385

0.370

EUROPEAN

PROJECTION

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE
VERSION

SOT123A 97-06-28

September 1992 17

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1992 18