Datasheet BLF147 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF147

VHF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to 'General' section for further
information.

PIN CONFIGURATION

ok, halfpage

43

g

MBB072

21

MLA876

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

PINNING - SOT121

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

3

(dB)

d

5

(dB)

SSB, class-AB 28 28 150 (PEP) > 17 > 35 <−30 <−30
CW, class-B 108 28 150 typ. 70 typ. 70 −−

September 1992 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 25 A
total power dissipation up to Tmb = 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 0.8 K/W
thermal resistance from mounting base to heatsink 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

Fig.2 DC SOAR.

MRA904

(2)

2

V

(V)

DS

DS(on)

10

.

300

handbook, halfpage

P

tot

(W)

200

100

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

(1)

(2)

50 100 150

Fig.3 Power/temperature derating curves.

MGP049

Th (°C)

September 1992 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 100 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−5mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 100 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S
drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 37 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 450 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 360 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 55 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS = 28 V; valid for Th = 25 to 70 °C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP050

V

GS

MGP051

(V)

60

handbook, halfpage

I

D

(A)

40

20

0

0

VDS= 10 V.

510 2015

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

170

handbook, halfpage

R

DS (on)

(mΩ)

150

130

110

90

0 50 100 150

ID= 8 A; VGS = 10 V.

MGP052

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

1400

handbook, halfpage

C

(pF)

1200

800

400

0

01020

VGS = 0; f = 1 MHz.

C

is

C

os

MRA903

30 40

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

500

handbook, halfpage

C

rs

(pF)

400

300

200

100

0

01020

VGS = 0; f = 1 MHz.

30

V

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MRA902

(V)

40

September 1992 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

APPLICATION INFORMATION FOR CLASS-AB OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source class-AB circuit.
f

= 28.000 MHz; f2 = 28.001 MHz.

1

= 0.2 K/W; RGS = 9.8 Ω; unless otherwise specified.

th mb-h

P

(W)

L

f

(MHz)

V

(V)

DS

I

DQ

(A)

G

(dB)

20 to 150 (PEP) 28 28 1 > 17

typ. 19

d

p

η

D

(%)

> 35

typ. 40

3

(dB)

(note 2)

<−30

typ. −34

d

5

(dB)

(note 2)

<−30

typ. −40

Notes

1. Optimum load impedance: 2.1 + j0 Ω.

2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF147 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:

VDS = 28 V; f = 28 MHz at rated load power.

30

handbook, halfpage

G

p

(dB)

MGP053

60

handbook, halfpage

η

D

(%)

40

MGP054

20

10

0 200

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

R

GS

100

PL (W) PEP

Fig.9 Gain as a function of load power, typical

values.

September 1992 6

20

0

0

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

R

GS

100 200

PL (W) PEP

Fig.10 Efficiency as a function of load power,

typical values.

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

−20

handbook, halfpage

d

3

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

R

GS

100 200

PL (W) PEP

MGP055

Fig.11 Third order intermodulation distortion as a

function of load power, typical values.

−20

handbook, halfpage

d

5

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

R

GS

100 200

PL (W) PEP

MGP056

Fig.12 Fifth order intermodulation distortion as a

function of load power, typical values.

handbook, full pagewidth

D.U.T.

L2

f = 28 MHz.

input
50 Ω

C1

C2

C3

L1

R2R1

C4

R3

R4

+V

G

Fig.13 Test circuit for class-AB operation.

September 1992 7

L3

C5

+V

C8

C9

L4

R5

L6L5

C7

D

L7

MGP057

C6

C10

C11

C12

C14

C15

C13

output

50 Ω

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C8, C9 multilayer ceramic chip capacitor

(note 1)
C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C6 multilayer ceramic chip capacitors in

parallel
C7 electrolytic capacitor 2.2µF, 63 V
C10 multilayer ceramic chip capacitor

(note 1)
C11, C12 multilayer ceramic chip capacitor

(note 1)
C15 multilayer ceramic chip capacitor

(note 1)
L1 6 turns enamelled 0.7 mm copper

wire

L2, L3 stripline (note 2) 41.1 Ω length 13 × 6 mm
L4 4 turns enamelled 1.5 mm copper

wire

L5, L6 grade 3B Ferroxcube wideband HF

choke
L7 3 turns enamelled 2.2 mm copper

wire

R1, R2 1 W metal film resistor 19.6 Ω 2322 153 51969
R3 0.4 W metal film resistor 10 kΩ 2322 151 71003
R4 0.4 W metal film resistor 1 MΩ 2322 151 71005
R5 1 W metal film resistor 10 Ω 2322 153 51009

75 pF

3 × 100 nF 2222 852 47104

100 pF

150 nF

240 pF

145 nH length 5 mm;

int. dia. 6 mm;
leads 2 × 5 mm

148 nH length 8 mm;

int. dia. 10 mm;
leads 2 × 5 mm

4312 020 36642

79 nH length 8 mm;

int. dia. 8 mm;
leads 2 × 5 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

September 1992 8

= 2.2),

r

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

30

handbook, halfpage

G

P

(dB)

20

10

0

0

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

R

GS

10 20 30

f (MHz)

Fig.14 Gain as a function of frequency, typical

values.

MGP058

f (MHz)

MGP059

r

i

x

i

10

handbook, halfpage

Z

i

(Ω)

5

0

−5
0

Class-AB operation; VDS = 28 V; IDQ = 1 A;

= 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

R

GS

10 20

Fig.15 Input impedance as a function of frequency

(series components), typical values.

30

150

MGP061

f (MHz)

r

i

x

i

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

0 50 100 200

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

= 15 Ω; PL = 150 W.

R

GS

Fig.16 Input impedance as a function of frequency

(series components), typical values.

L

L

150

MGP062

f (MHz)

handbook, halfpage

3

Z

L

(Ω)

2

1

0

−1
0 50 100 200

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

= 15 Ω; PL = 150 W.

R

GS

R

X

Fig.17 Load impedance as a function of frequency

(series components), typical values.

September 1992 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

= 15 Ω; PL = 150 W.

R

GS

50 100 200150

f (MHz)

Fig.18 Power gain as a function of frequency,

typical values.

MGP060

September 1992 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

H

43

α

12

H

q

U

1

L

C

B

b

p

w

M

C

2

A

U

U

2

w

M

AB

1

D

3

1

c

Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

12.83

12.86

0.16

0.10

0.006

0.004

IEC JEDEC EIAJ

12.59

0.506

0.496

12.57

0.505

0.495

F

D

1

2.67

28.45

2.41

25.52

1.120

0.105

0.095

0.312

1.005

0.249

REFERENCES

7.93

6.32

3.30

3.05

0.130

0.120

A

UNIT

7.27

mm

6.17

0.229

0.286

inches

OUTLINE
VERSION

SOT121B 97-06-28

0.243

0.219

Q

pH

4.45

3.91

0.175

0.154

q

18.42

0.725

U

24.90

24.63

0.98

0.97

1

6.48

6.22

0.255

0.245

3

2

12.32

12.06

0.485

0.475

EUROPEAN

PROJECTION

0.51

0.02

w1w

U

U

September 1992 11

2

1.02

0.04

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1992 12