Datasheet BLF145 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF145

HF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

HF power MOS transistor BLF145

FEATURES

• High power gain

• Low noise figure

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (V

) groups are

GS

available on request.

PINNING - SOT123

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

PIN CONFIGURATION

, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

I

(A)

D

P

(W)

η

L

G

p

(dB)

D

(%)

(note 1)

d

3

(dB)

SSB, class-A 28 28 1.3 8 (PEP) > 24 −<−40
SSB, class-AB 28 28 − 30 (PEP) typ. 20 typ. 40 typ. −35

Note

1. 2-tone efficiency.

September 1992 2

Philips Semiconductors Product specification

HF power MOS transistor BLF145

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

±V

GSS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 6A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 2.6 K/W
thermal resistance from mounting base to heatsink 0.3 K/W

10

handbook, halfpage

I

D

(A)

10

(1) Current is this area may be limited by R
(2) Tmb=25°C.

(1)

1

−1

110

Fig.2 DC SOAR.

(2)

VDS (V)

DS(on)

.

MRA901

120

MGP035

Th (°C)

100

handbook, halfpage

P

tot

(W)

80

60

40

2

10

20

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

(1)

(2)

40 80 160

Fig.3 Power/temperature derating curves.

September 1992 3

Philips Semiconductors Product specification

HF power MOS transistor BLF145

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 10 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−2mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 10 mA; VDS = 10 V −−100 mV

matched devices
forward transconductance ID = 1.5 A; VDS = 10 V 1.2 −− S
drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF

handbook, halfpage

4

T.C.

(mV/K)

2

0

−2

−4

−6

10

VDS=10V.

2

10

3

10

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP036

15

MGP037

VGS (V)

12

handbook, halfpage

I

D

(A)

8

4

4

10

0

05

VDS=10V.

Tj = 25 °C

125 °C

10 20

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

HF power MOS transistor BLF145

0.8

handbook, halfpage

R

DS(on)

(Ω)

0.6

0.4

0.2

0

040

ID= 1.5 A;

=10V.

V

GS

80 160

120

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP038

240

handbook, halfpage

C

(pF)

180

120

60

0

01020 40

VGS= 0; f = 1 MHz.

C

is

C

os

MGP039

30

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

20

handbook, halfpage

C

rs

(pF)

10

0

010

VGS= 0; f = 1 MHz.

20

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MRA900

30

September 1992 5

Philips Semiconductors Product specification

HF power MOS transistor BLF145

APPLICATION INFORMATION FOR CLASS-A OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source class-A circuit.

= 0.3 K/W; R1 = 26 Ω; unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

D

(A)

P

(W)

L

G

(dB)

SSB, class-A 28 28 1.3 8 (PEP) > 24

typ. 27

d

P

3

(dB)

(note 1)

>−40

typ. −43

d

5

(dB)

(note 1)

<−40

typ. −70

Z

L

(Ω)

18.4 + j5.2

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

30

handbook, halfpage

G

p

(dB)

28

MGP040

−20

handbook, halfpage

d

3

(dB)

−30

−40

MGP041

26

24

0

Class-A operation; VDS= 28 V; ID= 1.3 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

10 20 30

PL (W) PEP

Fig.9 Power gain as a function of load power,

typical values.

September 1992 6

−50

−60

0102030

Class-A operation; VDS= 28 V; ID= 1.3 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power, typical values.

Philips Semiconductors Product specification

HF power MOS transistor BLF145

handbook, full pagewidth

f = 28 MHz.

input
50 Ω

C1

C2

C3

D.U.T.

+V

L2

R1

C4

G

L1

L3

L4

C7

Fig.11 Test circuit for class-A operation.

C5

L5

C6

R2

L6

C11

C8

C9

C10

C12

+V

output

50 Ω

D

MGP042

List of components (class-A test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C10 multilayer ceramic chip capacitor

39 pF

(note 1)
C4, C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5, C6 multilayer ceramic chip capacitor

27 pF

(note 1)
C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 12 turns enamelled 0.5 mm copper

wire

307 nH length 8 mm;

int. dia. 4 mm
L2, L3 stripline (note 2) 30 Ω length 15 × 6mm
L4 14 turns enamelled 1 mm copper

wire

1039 nH length 14 mm;

int. dia. 9 mm
L5 9 turns enamelled 1 mm copper wire 305 nH length 10 mm;

int. dia. 6 mm
L6 grade 3B Ferroxcube wideband HF

4312 020 36640

choke
R1 0.25 W metal film resistor 26 Ω
R2 0.25 W metal film resistor 10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness1⁄16mm.

September 1992 7

= 4.5),

r

Philips Semiconductors Product specification

HF power MOS transistor BLF145

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source class-AB circuit.

= 0.3 K/W; R1 = 34 Ω; unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

d

L

G

p

(dB)

η

(%)

D

3

(dB)

(note 1)

d

5

(dB)

(note 1)

Z

(Ω)

L

SSB, class-AB 28 28 0.25 30 (PEP) typ. 20 typ. 40 typ. −35 typ. −40 8.9 + j1.0

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF145 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
PL = 30 W single tone under the following conditions:

VDS = 28 V; f = 28 MHz; Th = 25 °C; R

th mb-h

= 0.3 K/W at

rated load power.

22

handbook, halfpage

G

p

(dB)

MGP043

60

handbook, halfpage

η

D

(%)

MGP044

20

18

16

0

Class-AB operation; VDS= 28 V; IDQ= 0.25 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

20 40 60

PL (W)

Fig.12 Power gain as a function of load power,

typical values.

September 1992 8

40

20

0

0

Class-AB operation; VDS= 28 V; IDQ= 0.25 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

20 40 60

PL (W)

Fig.13 Two tone efficiency as a function of load

power, typical values.

Philips Semiconductors Product specification

HF power MOS transistor BLF145

handbook, full pagewidth

C7

C11

C8

C9

C10

C12

+V

output

50 Ω

D

MGP045

L5

f = 28 MHz.

input
50 Ω

C1

L3

L4

C6

C2

D.U.T.

+V

L2

R1

C3

G

L1

Fig.14 Test circuit for class-AB operation.

C4

C5

R2

L6

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C4, C5 multilayer ceramic chip capacitor

27 pF

(note 1)

C7, C10 multilayer ceramic chip capacitor

39 pF

(note 1)
C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 13 turns enamelled 0.5 mm copper

wire

415 nH length 10 mm;

int. dia. 5 mm
L2, L3 stripline (note 2) 30 Ω length 15 × 6mm
L4 10 turns enamelled 1 mm copper

wire

390 nH length 13 mm;

int. dia. 7 mm
L5 9 turns enamelled 1 mm copper wire 245 nH length 10 mm;

int. dia. 5 mm
L6 grade 3B Ferroxcube wideband HF

4312 020 36640

choke
R1 0.5 W metal film resistor 34 Ω
R2 0.25 W metal film resistor 10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness1⁄16mm.

September 1992 9

= 4.5),

r

Philips Semiconductors Product specification

HF power MOS transistor BLF145

−20

handbook, halfpage

d

3

(dB)

−30

−40

−50

0

Class-AB operation; VDS= 28 V; IDQ= 0.25 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

20 40 60

MGP046

PL (W)

Fig.15 Third order intermodulation distortion as a

function of load power, typical values.

−20

handbook, halfpage

d

5

(dB)

−30

−40

−50

0

Class-AB operation; VDS= 28 V; IDQ= 0.25 A;

= 0.3 K/W; f = 28 MHz.

R

th mb-h

solid line: T
dotted line: T

=25°C.

h

=70°C.

h

20 40 60

MGP047

PL (W)

Fig.16 Fifth order intermodulation distortion as a

function of load power, typical values.

21

handbook, halfpage

G

p

(dB)

20

19

030

Class-AB operation; VDS= 28 V; IDQ= 0.25 A;

= 30 W; Th=25°C; R

P

L

=34Ω;ZL= 8.9 +j1 Ω.

R

1

6 121824

= 0.3 K/W;

th mb-h

f (MHz)

Fig.17 Power gain as a function of frequency,

typical values.

MGP048

Table 1

Input impedance as a function of frequency
Class-AB operation; V
P

= 30 W; Th = 25 °C;

L

R

= 0.3 K/W; R1 = 34 Ω;ZL = 8.9 + j1 Ω.

th mb-h

f

(MHz)

= 28 V; IDQ = 0.25 A;

DS

Z

(Ω)

1.5 32.9 − j2.2

3.0 32.4 − j4.3

6.0 30.7 − j8.1
10 27.4 − j11.9
15 32.9 − j14.6
20 18.5 − j15.4
25 15.1 − j15.3
30 12.5 − j14.6

i

September 1992 10

Philips Semiconductors Product specification

HF power MOS transistor BLF145

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

25.15

24.38

0.99

0.96

U

1

2

6.61

6.09

0.26

0.24

PROJECTION

w

U

3

9.78

9.39

0.385

0.370

EUROPEAN

1

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE

VERSION

SOT123A 97-06-28

September 1992 11

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF power MOS transistor BLF145

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1992 12