Datasheet BLF1047 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
M3D390
DATA SHEET
BLF1047
UHF power LDMOS transistor
Preliminary specification 1999 Jul 12
Page 2
UHF power LDMOS transistor BLF1047
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source test circuit.
h
PINNING - SOT541A
PIN DESCRIPTION
1drain 2gate 3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline.
3
MBK765
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
=960; f2= 960.1 26 70 (PEP) >14 >35 ≤−26
1
V
(V)
DS
P
(W)
L
G
(dB)
p
CW, class-AB (1-tone) 960 26 70 >14 >45
η
(%)
D
d
im
(dBc)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jul 12 2
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Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
drain-source voltage 65 V gate-source voltage −±20 V drain current (DC) 9A storage temperature 65 +150 °C junction temperature 200 °C
thermal resistance from junction to heatsink Th=25°C, P
=100W;
dis
1.15 K/W
note 1
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage VGS=0; ID=1.4mA 65 −−V gate-source threshold voltage VDS=10V; ID= 140 mA 4 5V drain-source leakage current VGS=0; VDS=28V −−10 µA drain cut-off current VGS=V
+9V; VDS=10V 20 −−A
GSth
gate leakage current VGS= ±20 V; VDS=0 −−250 nA forward transconductance VDS=10V; ID=5A 3 S drain-source on-state resistance VGS=V
+9V; ID=5A 200 m
GSth
input capacitance VGS=0; VDS=26V; f=1MHz 75 pF output capacitance VGS=0; VDS=26V; f=1MHz 65 pF feedback capacitance VGS=0; VDS=26V; f=1MHz 2.5 pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
CW, class-AB (2-tone) f
1
f
(MHz)
= 960; f2= 960.1 26 70 (PEP) >14 >35 ≤−26
=25°C; R
h
V
DS
(V)
= 1.15 K/W, unless otherwise specified.
th j-h
P
(W)
L
G
(dB)
p
η
D
(%)
d
(dBc)
CW, class-AB (1-tone) 960 26 70 >14 >45
im
Ruggedness in class-AB operation
The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V
= 26 V; f = 960 MHz at rated load power.
DS
1999 Jul 12 3
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Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1047
PACKAGE OUTLINE
Flanged LDMOST package; 2 mounting holes; 2 leads SOT541A
Package under
development
Philips Semiconductors reserves the
D
A
F
3
D
1
right to make changes without notice.
U
1
q
C
1
H
U
2
A
2
b
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
5.13
4.34
0.202
0.171
11.05
10.80
0.435
0.425
c
0.18
0.10
0.007
0.004
Db
15.39
15.09
0.606
0.594
D
15.39
15.09
0.606
0.594
1
10.26
10.06
0.404
0.396
EE
1
10.29
10.03
0.405
0.395
1.78
1.52
0.070
0.060
w
M M
C
2
scale
F
H
20.83
19.81
0.820
0.780
p
3.43
3.18
0.135
0.125
B
Q
2.69
2.44
0.106
0.096
c
U
9.91
9.65
0.390
0.380
E
1
Q
w
2
1
2
0.25 0.5122.10
0.01 0.020.87
p
w
M M M
AB
1
qw
U
1
27.31
27.05
1.075
1.065
E
OUTLINE VERSION
SOT541A 99-04-08
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
1999 Jul 12 4
Page 5
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1047
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jul 12 5
Page 6
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1999 66
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands budgetnum/printrun/ed/pp6 Date of release: 1999 Jul 12 Document order number: 9397 750 06119
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