Datasheet BLF1046-P, BLF1046 Datasheet (Philips)

DATA SH EET

Preliminary specification
Supersedes data of 1999 Nov 02

2000 Feb 02

DISCRETE SEMICONDUCTORS

BLF1046

UHF power LDMOS transistor

M3D381

2000 Feb 02 2

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 1 GHz).

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.

PINNING - SOT467C

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

3

2

Top view

MBK584

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

V

DS

(V)

P

L

(W)

G

p

(dB)

η

D

(%)

d

im

(dBc)

CW, class-AB (2-tone) f

1

= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28

CW, class-AB (1-tone) 960 26 45 >14 >45 −

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Feb 02 3

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Determined under specified RF operating conditions, based on maximum peak junction temperature.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

h

=25°C; R

th mb-h

= 0.6 K/W, unless otherwise specified.

Ruggedness in class-AB operation

The BLF1046is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

DS

= 26 V; f = 960 MHz at rated load power.

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

drain-source voltage − 65 V

V

GS

gate-source voltage −±20 V

I

D

drain current (DC) − 4.5 A

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to heatsink Th=25°C, P

dis

=97W;

note 1

1.2 K/W

R

th mb-h

thermal resistance from mounting base to heatsink 0.6 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 65 −−V

V

GSth

gate-source threshold voltage VDS= 10 V; ID=70mA 4 − 5V

I

DSS

drain-source leakage current VGS= 0; VDS=26V −−1µA

I

DSX

drain cut-off current VGS=V

GSth

+9V; VDS= 10 V 12.5 −−A

I

GSS

gate leakage current VGS= ±20 V; VDS=0 −−125 nA

g

fs

forward transconductance VDS= 10 V; ID= 3.5 A − 2 − S

R

DSon

drain-source on-state resistance VGS=V

GSth

+9V; ID= 3.5 A − 300 − mΩ

C

is

input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 46 − pF

C

os

output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 37 − pF

C

rs

feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 1.5 − pF

MODE OF OPERATION

f

(MHz)

V

DS

(V)

P

L

(W)

G

p

(dB)

η

D

(%)

d

im

(dBc)

CW, class-AB (2-tone) f

1

= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28

CW, class-AB (1-tone) 960 26 45 >14 >45 −

2000 Feb 02 4

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT467C

99-12-06
99-12-28

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

0.15

0.10

5.59

5.33

9.25

9.04

1.65

1.40

18.54

17.02

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.43

3.18

4.67

3.94

2.21

1.96

D

D

1

U

1

1

3

2

A

U

2

E

E

1

p

b

H

Q

F

c

UNIT

Q

cD

9.27

9.02

D

1

5.92

5.77

E

5.97

5.72

E

1

FH p q

mm

0.184

0.155

inch

b

14.27

20.45

20.19

U

2

U

1

5.97

5.72

0.25

w

1

0.51

0.006

0.004

0.220

0.210

0.364

0.356

0.065

0.055

0.73

0.67

0.135

0.125

0.087

0.077

0.365

0.355

0.233

0.227

0.235

0.225

0.562

0.805

0.795

0.235

0.225

0.010 0.020

w

2

A

M M

C

C

A

w

1

w

2

AB

M M M

q

B

SOT467C

2000 Feb 02 5

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

2000 Feb 02 6

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

NOTES

2000 Feb 02 7

Philips Semiconductors Preliminary specification

UHF power LDMOS transistor BLF1046

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Internet: http://www.semiconductors.philips.com

2000

69

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Printed in The Netherlands 603516/04/pp8 Date of release: 2000 Feb 02 Document order number: 9397 750 06752