Datasheet BH6150F Datasheet (ROHM)

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Memory ICs
System reset IC
BH6150F
The BH6150F has two reset circuits, one detects the power supply voltage, and the other detects the input voltage. With this one IC it is possible to apply a reset to the logic systems of CPUs, and mechanical systems.
Applications Personal computers, CPUs, MPUs, logic circuits, reset circuits for mechanical systems, level detector circuits, battery voltage detector circuits, and backup power supply switching circuits
Features Two types of reset circuit provided.
1) Reset circuit 1 (input voltage detector)
Detection voltage: 1.25V (Typ.) Transmission delay time: 200µs (Typ.) Open collector output, and 10kpull-up resistor on chip.
2) Reset circuit 2 (supply voltage detector) Detection voltage: 4.2V (Typ.) Transmission delay time: 25, 50, 100 and 200 ms (select using the Ct0 and Ct1 pins) Manual reset function provided Open collector output, and 10kpull-up resistor on chip.
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit Power supply voltage Power dissipation Operating temperature Storage temperature
V
CC
Pd Topr Tstg
V
mW
°C °C
Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
– 0.3 ~ + 7.0
– 20 ~ + 75
– 40 ~ + 125
450
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Memory ICs BH6150F
Block diagram
+
+ –
Delay
Circuit
Reset Circuit 2
Reset Circuit 1
10k
10k
1234
8765
Vref
1.25V
Vref
1.25V
Pin descriptions
Pin No. Pin name Function
1 2 3 4 5 6 7 8
When neither Ct0 or Ct1 are connected, the delay time is 100ms (Typ.).
Ct0
Input
Ct1
GND Output 2 Output 1
V
CC
Manual reset
Delay time control
Reset circuit 1 input Delay time control
GND Reset circuit 2 output Reset circuit 1 output Power supply Manual reset input
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Memory ICs BH6150F
Input / output circuits
Input
Ct0, Ct1
Manual reset Output 1, Output 2
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Memory ICs BH6150F
Electrical characteristics (unless otherwise specified VCC = 4.5V to 5.5V and Ta = 25°C)
Reset circuit 1
Parameter
Symbol Min. Typ. Max. Unit Conditions Detection voltage Hysteresis voltage High level transmission delay time Low level transmission delay time Output low level voltage Input voltage range Input current
V
S1
VS1 TPLH1 TPHL1
VOL1
VIN
IIN
1.20 9
80 — —
– 0.3
1.25 15
200
10
0.1 —
200
1.30 23
500
0.4
V
CC
500
V
mV
µs µs
V V
nA
— —
CL = 100pF CL = 100pF V
IN < 1.2V, IOL = 5mA
V
IN = 1.25V
Reset circuit 2
Parameter
Symbol Min. Typ. Max. Unit Conditions Detection voltage Hysteresis voltage High level transmission delay time
Low level transmission delay time Output low level voltage Manual reset
Input high level voltage Input high level current Input low level voltage
VS2
VS2
TPLH2
TPHL2
VOL2
VRESH
IRESH
VRESL
4.0 30 15 30 60
120
— —
2
– 0.3
4.2 50 25 50
100 200
0.5
0.1 — 20 —
4.4
100
35
70 140 280
0.4 V
CC
80
0.8
V
mV
ms ms ms ms
µs
V V
µA
V
Ct0 = L, Ct1 = H Ct0 = H, Ct1 = L Ct0 = H, Ct1 = H Ct0 = L, Ct1 = L CL = 100pF V
CC < 4V, IOL = 5mA
V
RES = 2V
CL = 100pF
— —
Common specifications
Parameter
Symbol Min. Typ. Max. Unit Conditions Circuit current when off Circuit current when on Detection voltage temperature coefficient Output high level voltage Operation limit voltage
I
CC1
ICC2
VS / T
V
OH1,2
VOPL1,2
— — —
V
CC – 0.7
1000
2
0.01
V
CC – 0.4
0.71
1400
3 — —
0.85
µA
mA
% / °C
V V
V
CC = 5V, VIN > VS1
VCC = 4V, VIN < VS1
IOH = 40µA V
SAT ⬉ 0.4V, RL = 1K
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Memory ICs BH6150F
A
A
V
V
IOH IOL
VOH2 VOL2 VOPL2
CL
IOH IOL
VOH1 VOL1 VOPL1
CL
V
CC
RL = 1k
V
OPL2: ON
V
CC
RL = 1k
V
OPL2: ON
8
BH6150F
ICC1 ICC2
765
1234
A
VCC
MRES VCC OUT 1 OUT 2
Ct0 IN Ct1 GND
I
RESH
VRES
IIN
VS1 VS1
V
IN
Measurement circuit
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Memory ICs BH6150F
Circuit operation
VIN
VS1 + VS1 (Typ. = 1.265V)
V
S1 (Typ. = 1.25V)
5V
TPHL2
TPLH1 TPHL1 TPLH1
TPLH2 TPLH2
0V
V
OHVOUT1
VOL1
VCC
VS2 + VS2 (Typ. = 4.25V)
V
S2 (Typ. = 4.2V)
V
CC
0V
V
OHVOUT2
VOL2
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Memory ICs BH6150F
– 20
1.20
1.15
1.25
1.30
1.35
0 20406080
DETECTING VOLTAGE: VS1 (V)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 1 Reset circuit 1 detector
voltage vs. ambient temperature
Electrical characteristic curves
– 20
10
5
15
20
25
0 20406080
HYSTERESIS VOLTAGE: VS1 (mV)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 2 Reset circuit 1 Hysteresis
voltage vs. ambient temperature
– 20
120
80
160
200
240
280
0 20406080
“H” PROPAGATION DELAY TIME: TPLH1 (µS)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 3 Reset circuit 1 high level
transmission delay time vs. ambient temperature
– 20
3.8
4.0
4.1
4.2
4.3
4.4
0 20406080
DETECTING VOLTAGE: VS2 (V)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 4 Reset circuit 2 detector
voltage vs. ambient temperature
– 20
0
20
40
60
80
100
0 20406080
HYSTERESIS VOLTAGE: VS2 (mV)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 5 Reset circuit 2 Hysteresis
voltage vs. ambient temperature
– 20
40
0
80
120
160
200
0 20406080
“H” PROPAGATION DELAY TIME: TPLH2 (mS)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 6 Reset circuit 2 high level
transmission delay time vs. ambient temperature
Ct0 = L, Ct1 = H
Ct0 = H, Ct1 = L
Ct0 = H, Ct1 = H
Ct0 = L, Ct1 = L
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Memory ICs BH6150F
0
0.5
0
1.0
0.5 1.0
MAXIMUM OPERATING VOLTAGE: VOPL1, 2 (V)
POWER SUPPLY VOLTAGE: VCC (V)
Fig. 7 Operation limit voltage vs.
power supply voltage
RL = 1k
R
L = 27k
R
L =
External dimensions (Units: mm)
SOP8
0.4 ± 0.11.27
0.15
0.3Min.
0.15 ± 0.1
0.11
6.2 ± 0.3
4.4 ± 0.2
5.0 ± 0.2
85
41
1.5 ± 0.1
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