Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD702; BGD702MI
CATV amplifier modules
Product specification
Supersedes data of 1998 Mar 13
1999 Mar 22
Page 2
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid amplifier modules designed
for CATV systems operating over a
PINNING - SOT115J
DESCRIPTION
PIN
BGD702 BGD702MI
1 input output
2 common common
3 common common
5+V
B
7 common common
8 common common
9 output input
+V
alfpage
2
B
Side view
789
351
Fig.1 Simplified outline.
frequency range of 40 to 750 MHz at
a voltage supply of 24 V (DC). Both
modules are electrically identical,
only the pinning is different.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 750 MHz 18.5 − dB
I
tot
total current consumption (DC) VB=24V − 435 mA
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Mar 22 2
Page 3
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; V
= 24 V; Tmb=35°C; ZS=ZL=75Ω
B
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18 18.5 19 dB
f = 750 MHz 18.5 19.7 − dB
SL slope cable equivalent f = 40 to 750 MHz 0.2 1.3 2 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.2 ±0.5 dB
S
11
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 640 MHz 17 22 − dB
f = 640 to 750 MHz 16 21 − dB
S
22
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 640 MHz 17 21 − dB
f = 640 to 750 MHz 16 21 − dB
S
21
CTB composite triple beat 110 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−59 −58 dB
measured at 745.25 MHz
X
mod
cross modulation 110 channels flat; Vo= 44 dBmV;
−−64 −62 dB
measured at 55.25 MHz
CSO composite second order distortion 110 channels flat; V
= 44 dBmV;
o
−−63 −58 dB
measured at 746.5 MHz
d
2
V
o
second order distortion note 1 −−78 −68 dB
output voltage dim= −60 dB; note 2 61 64 − dBmV
F noise figure f = 50 MHz − 4.5 5.5 dB
f = 450 MHz −−6.5 dB
f = 550 MHz −−6.5 dB
f = 600 MHz −−7dB
f = 750 MHz − 6.5 8.5 dB
I
tot
total current consumption (DC) note 3 − 425 435 mA
Notes
= 55.25 MHz; Vp= 44 dBmV;
1. f
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 3
Page 4
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
Table 2 Bandwidth 40 to 600 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 600 MHz 0.2 − 2dB
FL flatness of frequency response f = 40 to 600 MHz −−±0.3 dB
S
11
S
22
S
21
CTB composite triple beat 85 channels flat; V
X
mod
CSO composite second order distortion 85 channels flat; V
d
2
V
o
F noise figure see Table 1 −−−dB
I
tot
power gain f = 50 MHz 18 18.5 19 dB
f = 600 MHz 18.5 19.4 − dB
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 600 MHz 17 22 − dB
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 600 MHz 17 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−66 −65 dB
measured at 595.25 MHz
cross modulation 85 channels flat; Vo= 44 dBmV;
−−66 −65 dB
measured at 55.25 MHz
= 44 dBmV;
o
−−68 −60 dB
measured at 596.5 MHz
second order distortion note 1 −−80 −70 dB
output voltage dim= −60 dB; note 2 64 67 − dBmV
total current consumption (DC) note 3 − 425 435 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 541.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 596.5 MHz.
2. Measured according to DIN45004B:
fp= 590.25 MHz; Vp=Vo;
fq= 597.25 MHz; Vq=Vo−6 dB;
fr= 599.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 588.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 4
Page 5
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
Table 3 Bandwidth 40 to 550 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 550 MHz 0.2 − 2dB
FL flatness of frequency response f = 40 to 550 MHz −−±0.3 dB
S
11
S
22
S
21
CTB composite triple beat 77 channels flat; V
X
mod
CSO composite second order distortion 77 channels flat; V
d
2
V
o
F noise figure see Table 1 −−−dB
I
tot
power gain f = 50 MHz 18 18.5 19 dB
f = 550 MHz 18.5 19.3 − dB
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 550 MHz 17 22 − dB
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 550 MHz 17 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−68 −67 dB
measured at 547.25 MHz
cross modulation 77 channels flat; Vo= 44 dBmV;
−−68 −67 dB
measured at 55.25 MHz
= 44 dBmV;
o
−−68 −62 dB
measured at 548.5 MHz
second order distortion note 1 −−81 −72 dB
output voltage dim= −60 dB; note 2 64.5 68 − dBmV
total current consumption (DC) note 3 − 425 435 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 493.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo;
fq= 547.25 MHz; Vq=Vo−6 dB;
fr= 549.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 538.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 5
Page 6
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
Table 4 Bandwidth 40 to 450 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 450 MHz 0.2 − 2dB
FL flatness of frequency response f = 40 to 450 MHz −−±0.3 dB
S
11
S
22
S
21
CTB composite triple beat 60 channels flat; V
X
mod
CSO composite second order distortion 60 channels flat; V
d
2
V
o
F noise figure see Table 1 −−−dB
I
tot
power gain f = 50 MHz 18 18.5 19 dB
f = 450 MHz 18.5 19.2 − dB
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 450 MHz 17 22 − dB
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 450 MHz 17 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 46 dBmV;
o
−−−68 dB
measured at 445.25 MHz
cross modulation 60 channels flat; Vo= 46 dBmV;
−−−65 dB
measured at 55.25 MHz
= 46 dBmV
o
−−−65 dB
measured at 446.5 MHz
second order distortion note 1 −−−75 dB
output voltage dim= −60 dB; note 2 67 −−dBmV
total current consumption (DC) note 3 − 425 435 mA
Notes
1. f
= 55.25 MHz; Vp= 46 dBmV;
p
fq= 391.25 MHz; Vq= 46 dBmV;
measured at fp+fq= 446.5 MHz.
2. Measured according to DIN45004B:
fp= 440.25 MHz; Vp=Vo;
fq= 447.25 MHz; Vq=Vo−6 dB;
fr= 449.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 438.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 6
Page 7
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
1999 Mar 22 7
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 8
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Mar 22 8
Page 9
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
NOTES
1999 Mar 22 9
Page 10
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
NOTES
1999 Mar 22 10
Page 11
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
NOTES
1999 Mar 22 11
Page 12
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© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 125008/00/04/pp12 Date of release: 1999 Mar 22 Document order number: 9397 750 05294
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