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DISCRETE SEMICONDUCTORS
DATA SH EET
BGD502; BGD504
CATV power doubler amplifier
modules
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC16
1995 Oct 25
Page 2
Philips Semiconductors Product specification
CATV power doubler amplifier modules BGD502; BGD504
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
PINNING - SOT115C
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
age
123 5 789
Side view
Fig.1 Simplified outline.
Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz
BGD502 18 19 dB
BGD504 19.5 20.5 dB
power gain f = 550 MHz
BGD502 18.8 20.8 dB
BGD504 20.2 22.2 dB
I
tot
total current consumption (DC) VB= 24 V − 435 mA
MSB004 - 2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 60 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1995 Oct 25 2
Page 3
Philips Semiconductors Product specification
CATV power doubler amplifier modules BGD502; BGD504
CHARACTERISTICS
Bandwidth 40 to 550 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz
BGD502 18 − 19 dB
BGD504 19.5 − 20.5 dB
power gain f = 550 MHz
BGD502 18.8 − 20.8 dB
BGD504 20.2 − 22.2 dB
SL slope cable equivalent f = 40 to 550 MHz 0.2 − 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz −−±0.3 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
phase response f = 50 MHz +135 − +225 deg
CTB composite triple beat 77 channels flat;
BGD502 −−−65 dB
BGD504 −−−64 dB
X
mod
cross modulation 77 channels flat;
BGD502 −−−68 dB
BGD504 −−−67 dB
CSO composite second order distortion 77 channels flat;
BGD502 −−−62 dB
BGD504 −−−60 dB
d
2
second order distortion note 1
BGD502 −−−72 dB
BGD504 −−−70 dB
V
o
output voltage dim = −60 dB; note 2
BGD502 64 −−dBmV
BGD504 63.5 −−dBmV
F noise figure f = 550 MHz −−8dB
I
tot
total current consumption (DC) note 3 − 415 435 mA
=24V; Tmb=35°C; ZS=ZL=75Ω.
B
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
= 44 dBmV;
V
o
measured at 547.25 MHz
Vo= 44 dBmV;
measured at 55.25 MHz
= 44 dBmV;
V
o
measured at 548.5 MHz
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV; measured at fp+fq= 548.5 MHz.
p
2. Measured according to DIN45004B: fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vo−6 dB;
fr= 549.25 MHz; Vr=Vo−6 dB; measured at fp+fq− fr= 538.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1995 Oct 25 3
Page 4
Philips Semiconductors Product specification
CATV power doubler amplifier modules BGD502; BGD504
CHARACTERISTICS
Bandwidth 40 to 450 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz
BGD502 18 − 19 dB
BGD504 19.5 − 20.5 dB
power gain f = 450 MHz
BGD502 18.6 − 20.6 dB
BGD504 20 − 22 dB
SL slope cable equivalent f = 40 to 450 MHz
BGD502 0.2 − 1.8 dB
BGD504 0 − 1.65 dB
FL flatness of frequency response f = 40 to 450 MHz −−±0.3 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
phase response f = 50 MHz +135 − +225 deg
CTB composite triple beat 60 channels flat;
BGD502 −−−67 dB
BGD504 −−−66 dB
CSO composite second order distortion 60 channels flat;
BGD502 −−t.b.f. dB
BGD504 −−t.b.f. dB
X
mod
cross modulation 60 channels flat;
BGD502 −−−67 dB
BGD504 −−−66 dB
d
2
second order distortion note 1
BGD502 −−−75 dB
BGD504 −−−73 dB
V
o
output voltage dim = −60 dB; note 2
BGD502 67 −−dBmV
BGD504 66.5 −−dBmV
F noise figure f = 450 MHz −−7dB
I
tot
total current consumption (DC) note 3 − 415 435 mA
= 24 V; Tmb=35°C; ZS=ZL=75Ω.
B
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
= 46 dBmV;
V
o
measured at 445.25 MHz
= 46 dBmV;
V
o
measured at 548.5 MHz
Vo = 46 dBmV;
measured at 55.25 MHz
Notes
1. f
= 55.25 MHz; Vp= 46 dBmV; fq= 391.25 MHz; Vq= 46 dBmV; measured at fp+fq= 446.5 MHz.
p
2. Measured according to DIN45004B: fp= 440.25 MHz; Vp=Vo; fq= 447.25 MHz; Vq=Vo−6 dB;
fr= 449.25 MHz; Vr=Vo−6 dB; measured at fp+fq− fr= 438.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1995 Oct 25 4
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