Datasheet BGA2711 Datasheet (Philips) [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGA2711

MMIC wideband amplifier

Product specification
Supersedes data of 2001 Apr 04

2001 Oct 19

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

FEATURES

• Internally matched to 50 Ω

• Very wide frequency range

• Very flat gain

• Unconditionally stable.

APPLICATIONS

• Cable systems

• LNB IF amplifiers

• General purpose

• ISM.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifierwith internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3 RF out
4 GND1
6 RF in

4

56

63

132

Top view

Marking code: G2-.

MAM455

Fig.1 Simplified outline (SOT363) and symbol.

1

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S

I

S

2

|s

|

21

DC supply voltage 5 6 V
DC supply current 12.6 − mA

insertion power gain f = 1 GHz 13.1 − dB
NF noise figure f = 1 GHz 4.8 − dB
P

L(sat)

saturated load power f = 1 GHz 2.8 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Oct 19 2

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

DC supply voltage RF input AC coupled − 6V

supply current − 20 mA

total power dissipation Ts≤ 80 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

thermal resistance from junction to solder

P

= 200 mW; Ts≤ 80 °C 300 K/W

tot

point

CHARACTERISTICS

VS=5V; IS= 12.6 mA; f = 1 GHz; Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

|s

|

21

supply current 10 12.6 16 mA

insertion power gain f = 1 GHz − 13.1 − dB

f = 2 GHz − 13.9 − dB

R

LIN

return losses input f = 1 GHz − 11 − dB

f = 2 GHz − 10 − dB

R

L OUT

return losses output f = 1 GHz − 18 − dB

f = 2 GHz − 13 − dB

NF noise figure f = 1 GHz − 4.8 − dB

f = 2 GHz − 4.8 − dB
BW bandwidth at |s
P

L(sat)

saturated load power f = 1 GHz − 2.8 − dBm

|2−3 dB below flat gain at 1 GHz − 3.6 − GHz

21

f = 2 GHz − 0.6 − dBm
P

L 1 dB

load power at 1 dB gain compression; f = 1 GHz −−0.7 − dBm

at 1 dB gain compression; f = 2 GHz −−1.8 − dBm
IP3

(in)

input intercept point f = 1 GHz −−4.8 − dBm

f = 2 GHz −−8.5 − dBm
IP3

(out)

output intercept point f = 1 GHz − 8.3 − dBm

f = 2 GHz − 5.4 − dBm

2001 Oct 19 3

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGA2711MMIC.Thedeviceisinternallymatchedto50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.

The 22 nF supply decoupling capacitor, C1 should be
located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

V

handbook, halfpage

s

C1

V

s

RF input

C2 C3

RF outRF in

GND2GND1

RF output

MGU435

handbook, halfpage

DC-block

100 pF

input output

Fig.3 Easy cascading application circuit.

handbook, halfpage

from RF

circuit

oscillator

Fig.4 Application as IF amplifier.

mixer

DC-block

100 pF

wideband

amplifier

DC-block

100 pF

MGU437

to IF circuit
or demodulator

MGU438

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

InFig.6theMMICisused as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

handbook, halfpage

antenna

handbook, halfpage

from modulation

or IF circuit

Fig.6 Application as driver amplifier.

LNA

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.5 Application as RF amplifier.

mixer

wideband

amplifier

oscillator

MGU439

to power
amplifier

MGU440

2001 Oct 19 4

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

handbook, full pagewidth

180°

IS= 12.6 mA; VS= 5 V; PD= −30 dBm; ZO=50Ω.

Fig.7 Input reflection coefficient (s11); typical values.

135°

+0.2

0

−0.2

−135°

+0.5

0.2 0.5

−0.5

90°

+1

100 MHz

1 2 5

3 GHz

−1

−90°

1.0

45°

+2

+5

−5

−2

−45°

MGU441

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

180°

IS= 12.6 mA; VS= 5 V; PD= −30 dBm; ZO=50Ω.

Fig.8 Output reflection coefficient (s22); typical values.

135°

+0.2

0

−0.2

−135°

+0.5

0.2 0.5

−0.5

90°

+1

1 2 5

100 MHz

−1

−90°

3 GHz

1.0

45°

+2

+5

−5

−2

−45°

MGU442

0.8

0.6

0.4

0.2

0°

0

1.0

2001 Oct 19 5

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

f (MHz)

MGU443

3000

handbook, halfpage

0

2

s

12

(dB)

−20

−40

−60

−80

0 1000 2000

IS= 12.6 mA; VS= 5 V; PD= −30 dBm; ZO=50Ω.

Fig.9 Isolation (|s12|2) as a function of frequency;

typical values.

20

handbook, halfpage

2

s

21

(dB)

15

10

5

0

0 1000 2000

IS= 12.6 mA; VS= 5 V; PD= −30 dBm; ZO=50Ω.

f (MHz)

Fig.10 Insertion gain (|s21|2) as a function of

frequency; typical values.

MGU444

3000

10

handbook, halfpage

P

L

(dBm)

0

−10

−20

−40

VS= 5 V; f = 1 GHz; ZO=50Ω.

−30 −20 0−10

MGU445

PD (dBm)

Fig.11 Load power as a function of drive power at

1 GHz; typical values.

10

handbook, halfpage

P

L

(dBm)

0

−10

−20

−40

VS= 5 V; f = 2 GHz; ZO=50Ω.

−30 −20 0−10

MGU446

PD (dBm)

Fig.12 Load power as a function of drive power at

2 GHz; typical values.

2001 Oct 19 6

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

10

handbook, halfpage

NF

(dB)

8

6

4

2

0

0 1000 2000 3000

IS= 12.6 mA; VS= 5 V; ZO=50Ω.

f (MHz)

Fig.13 Noise figure as a function of frequency;

typical values.

MGU447

handbook, halfpage

5

K

4

3

2

1

0

0 1000 2000 3000

IS= 12.6 mA; VS= 5 V; ZO=50Ω.

MGU448

f (MHz)

Fig.14 Stability factor as a function of frequency;

typical values.

Scattering parameters: IS= 12.6 mA; PD= −30 dBm; ZO=50Ω; T

(ratio)

s

21

ANGLE

MAGNITUDE

(deg)

f

(MHz)

s

11

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

amb

(ratio)

=25°C

s

12

ANGLE

(deg)

s

22

MAGNITUDE

(ratio)

ANGLE

(deg)

100 0.14563 −3.502 4.4867 −1.843 0.06220 −2.939 0.13029 −174.50
200 0.15253 5.557 4.4944 −6.788 0.06117 −8.095 0.12640 169.58
400 0.18735 10.06 4.4841 −15.22 0.05751 −16.61 0.11957 148.02
600 0.22695 8.206 4.4862 −22.94 0.05240 −22.85 0.11288 126.58

800 0.26122 2.635 4.4985 −30.57 0.04744 −27.72 0.11286 104.24
1000 0.28776 −2.465 4.5390 −38.34 0.04187 −31.17 0.12236 82.570
1200 0.30888 −8.179 4.6052 −46.14 0.03666 −32.98 0.14066 65.815
1400 0.32055 −13.16 4.6862 −54.45 0.03251 −33.25 0.16341 53.911
1600 0.32492 −17.85 4.7929 −63.29 0.02903 −32.38 0.18689 45.122
1800 0.31849 −22.43 4.9219 −72.67 0.02624 −29.24 0.20662 38.894
2000 0.30085 −26.75 4.9973 −83.08 0.02395 −26.62 0.22092 33.706
2200 0.27106 −31.57 5.0755 −93.96 0.02228 −22.20 0.22754 29.699
2400 0.23157 −35.78 5.0668 −106.1 0.02134 −17.95 0.22679 26.622
2600 0.18594 −40.38 4.9143 −118.1 0.02176 −13.86 0.21806 23.868
2800 0.13159 −44.34 4.6797 −129.6 0.02276 −12.70 0.19660 22.060
3000 0.07266 −41.76 4.3139 −140.5 0.02241 −17.06 0.16355 22.273

2001 Oct 19 7

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT363

D

y

56

pin 1
index

4

132

e

1

e

b

p

wB

M

E

H

E

A

A

1

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.30

0.25

0.20

0.10

IEC JEDEC EIAJ

2.2

1.8

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE

VERSION

SOT363 SC-88

2001 Oct 19 8

H

E

2.2

2.0

L

p

0.45

0.15

Qywv

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers using or sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any of these products, conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Oct 19 9

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

NOTES

2001 Oct 19 10

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2711

NOTES

2001 Oct 19 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613516/02/pp12 Date of release: 2001 Oct 19 Document order number: 9397 750 08545

SCA73