Datasheet BGA2011 Datasheet (Philips) [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGA2011

900 MHz high linear low noise
amplifier

Product specification
Supersedes data of 2000 Sep 06

2000 Dec 04

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

FEATURES

• Low current, low voltage

• High linearity

• High power gain

• Low noise

• Integrated temperature compensated biasing

• Control pin for adjustment bias current.

APPLICATIONS

• RF front end

• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifierconsistingofanNPNdoublepolysilicontransistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.

PINNING

PIN DESCRIPTION

1 RF in
2V
3V

C
S

4 RF out

5, 6 GND

BIAS

CIRCUIT

RF in

V

S

handbook, halfpage

132

Top view

Marking code:A5-

56

4

V

C

MBL251

Fig.1 Simplified outline (SOT363) and symbol.

RF out

GND

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S

I

S

I

C

2

|

|s

21

DC supply voltage RF input AC coupled 3 4.5 V
DC supply current 15 − mA
DC control current VC=V

S

insertion power gain in application circuit, see Fig.2;

0.11 − mA
19 − dB

f = 900 MHz

NF noise figure I

= 15 mA; f = 900 MHz 1.7 − dB

S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

V

C

I

S

I

C

P

tot

T

stg

T

j

DC supply voltage RF input AC coupled − 4.5 V
voltage on control pin − V

S

V
supply current forced by DC voltage on RF input − 30 mA
control current − 0.25 mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

2000 Dec 04 2

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

CHARACTERISTICS

RF input AC coupled; V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

C

R

LIN

R

L OUT

2

|s

|

21

NF noise figure typical application; see Fig.2;

IP3

in

thermal resistance from junction

P

= 135 mW; Ts≤ 100 °C 350 K/W

tot

to solder point

=3V; IS= 15 mA; f = 900 MHz; Tj=25°C; unless otherwise specified.

S

supply current 10 15 20 mA
control current − 0.11 − mA
return losses input typical application; see Fig.2 −−11 − dB

high IP3 (see Fig.2; stripline = 0 mm) −−11 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−17 − dB

return losses output typical application; see Fig.2 −−11 − dB

high IP3 (see Fig.2; stripline = 0 mm) −−12 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−14 − dB

insertion power gain typical application; see Fig.2 − 15 − dB

high IP3 (see Fig.2; stripline = 0 mm) − 19 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) − 16 − dB

− 1.5 − dB

I

=15mA

S

high IP3 (see Fig.2; stripline = 0 mm) − 1.6 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) − 1.7 − dB

input intercept point typical application; see Fig.2 −−2−dBm

high IP3 (see Fig.2; stripline = 0 mm) − 4 − dBm
high IP3 (see Fig.2; stripline = 1.5 mm) − 10 − dBm

2000 Dec 04 3

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

APPLICATION INFORMATION

V

handbook, full pagewidth

RF in

V

S

V

V

C

C1

C

C5

IN

L1

C6

BIAS

CIRCUIT

SOT363

stripline

C4

L2

C2

OUT

GND

S

C3

RF out

MLD480

Fig.2 Application circuit.

List of components (see Fig.2)

COMPONENT DESCRIPTION

TYPICAL

APPLICATION

HIGH IP3

APPLICATION

DIMENSIONS

C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603
C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603
C4 multilayer ceramic chip capacitor 5.6 pF 5.6 pF 0603
C6 multilayer ceramic chip capacitor − 2 x 100 nF 0805
L1 SMD inductor − 10 nH 0603
L2 SMD inductor − 8.2 nH 0603

Note

1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (ε

= 6.15),

r

board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.

2000 Dec 04 4

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

30

handbook, halfpage

gain
(dB)

20

10

0

0

IC= 15 mA; VS=VC= 3 V; PD= −30 dBm; Zo=50Ω.

G

max

2

s

21

1000 3000

2000

Fig.3 Insertion gain (|s21|2) and G

functions of frequency; typical values.

f (MHz)

max

MLD481

as

20

handbook, halfpage

gain
(dB)

2

s

15

10

5

0

01

f = 900 MHz; VS= 3 V; PD= −30 dBm.

21

I

S

I

S

2

Fig.4 Insertion gain and supply current as

functions of control voltage; typical values.

MLD482

20

I

(mA)

15

10

5

0

(V)

3

V

C

S

20

handbook, halfpage

2

s

21

(dB)

15

10

5

0

−3

10

f = 900 MHz; VS= 4 V; PD= −30 dBm.

−2

10

IC (mA)

Fig.5 Insertion gain as a function of control

current; typical values.

MLD483

15

handbook, halfpage

IP3

out

(dBm)

10

5

−1

10

0

515

VS=VC= 3 V; PD= −30 dBm (both tones); f = 900 MHz; ∆f = 100 kHz.

IP3

IP3

out

in

10

IS (mA)

MLD484

0

IP3

(dBm)

−5

−10

−15

in

Fig.6 Output and input 3rd order intercept point

as a function of supply current;
typical application; typical values.

2000 Dec 04 5

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

handbook, halfpage

2

NF

(dB)

1.6

1.2

0.8

0.4

0

515

VS=VC= 3 V; f = 900 MHz.

10

IS (mA)

Fig.7 Noise figure as a function of supply

current; typical values.

Scattering parameters

VS=VC=3V; PD=−30 dBm; Zo=50Ω; T

MLD485

amb

=25°C

f

(MHz)

s

MAGNITUDE

(ratio)

11

ANGLE

(deg)

s

MAGNITUDE

(ratio)

21

ANGLE

(deg)

MAGNITUDE

(ratio)

s

12

ANGLE

MAGNITUDE

(deg)

(ratio)

s

22

ANGLE

(deg)

100 0.553 −22.45 16.198 160.5 0.006 76.72 0.115 −87.98
200 0.499 −42.12 14.354 145.4 0.012 67.53 0.184 −113.5
400 0.394 −71.44 10.688 124.6 0.018 59.55 0.256 −141.2
600 0.331 −90.58 8.156 112.2 0.021 58.29 0.283 −158.1

800 0.295 −104.0 6.512 103.9 0.024 60.91 0.293 −170.5
1000 0.276 −114.9 5.415 97.72 0.027 64.65 0.298 178.7
1200 0.267 −124.2 4.640 93.01 0.032 69.04 0.304 169.5
1400 0.262 −134.2 4.112 89.10 0.037 73.22 0.310 162.5
1600 0.270 −144.2 3.659 85.21 0.043 75.43 0.311 157.0
1800 0.287 −152.7 3.336 82.21 0.049 77.84 0.309 152.7
2000 0.309 −159.7 3.045 78.21 0.057 78.60 0.312 150.5
2200 0.339 −166.2 2.849 73.94 0.066 77.96 0.304 149.6
2400 0.360 −172.0 2.680 69.19 0.076 75.04 0.291 151.4
2600 0.390 −175.9 2.511 64.60 0.086 74.92 0.292 149.2
2800 0.398 178.0 2.332 59.20 0.094 69.95 0.278 148.4
3000 0.392 173.9 2.108 56.72 0.099 69.12 0.317 140.0

2000 Dec 04 6

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

handbook, full pagewidth

0

180°

−135°

IC= 15 mA; VS=VC= 3 V; PD= −30 dBm; Zo=50Ω.

Fig.8 Common emitter input reflection coefficient (s11); typical values.

135°

+0.5

+0.2

0.2 0.5 1
3 GHz

−0.2

−0.5

900 MHz

90°

+1

−1

−90°

+2

2 5

100 MHz

−2

45°

−45°

+5

−5

MLD486

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

100 MHz

20 16 12 8 4

180°

IC= 15 mA; VS=VC= 3 V; PD= −30 dBm; Zo=50Ω.

Fig.9 Common emitter forward transmission coefficient (s21); typical values.

135°

−135°

90°

500 MHz

−90°

45°

900 MHz

1.8 GHz
3 GHz

0°

−45°

MLD487

2000 Dec 04 7

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

handbook, full pagewidth

20 16 12 8 4

180°

IC= 15 mA; VS=VC= 3 V; PD= −30 dBm; Zo=50Ω.

Fig.10 Common emitter reverse transmission coefficient (s12); typical values.

135°

−135°

90°

100 MHz

−90°

45°

3 GHz

0°

−45°

MLD488

handbook, full pagewidth

0

180°

−135°

IC= 15 mA; VS=VC= 3 V; PD= −30 dBm; Zo=50Ω.

Fig.11 Common emitter output reflection coefficient (s22); typical values.

135°

+0.5

+0.2

0.2 0.5 1
900 MHz

−0.2

−0.5

3 GHz

90°

+1

−1

−90°

100 MHz

+2

2 5

−2

45°

−45°

+5

−5

MLD489

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

2000 Dec 04 8

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT363

D

y

56

pin 1
index

4

132

e

1

e

b

p

wBM

E

H

E

A

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

mm

A

1.1

0.8

OUTLINE
VERSION

SOT363 SC-88

max

0.1

b

cD

p

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

1.35

1.15

e

E

1.3

REFERENCES

e

1

0.65

2000 Dec 04 9

H

E

2.2

2.0

L

p

0.45

0.15

Qywv

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditionsabovethosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofany of these products, conveys no licence ortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified

(1)

2000 Dec 04 10

Philips Semiconductors Product specification

900 MHz high linear low noise amplifier BGA2011

NOTES

2000 Dec 04 11

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2000

Internet: http://www.semiconductors.philips.com

70

Printed in The Netherlands 613516/02/pp12 Date of release:2000 Dec 04 Document order number: 9397 750 07678