Page 1
-
£
°
-
°
-
° C
HiRel NPN Silicon RF Transistor BFY 193
Features
HiRel Discrete and Microwave Semiconductor
¥
¥ For low noise, high gain broadband amplifiers up to
2 GHz.
¥ For linear broadband amplifiers
¥ Hermetically sealed microwave package
¥
f
= 8 GHz,
T
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions!
F
= 2.3 dB at 2 GHz
Micro-X1
Type Marking Ordering Code Pin Configuration Package
BFY 193 (ql)
see below C E B E Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1701
Chapter Order Instructions for ordering example)
(see
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Collector-emitter voltage
Collector-emitter voltage,
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
V
T
S
= 0
BE
104 ° C
2)
V
V
V
V
I
I
P
CEO
CES
CBO
EBO
C
B
tot
12 V
20 V
20 V
2V
80 mA
1)
10
mA
580 mW
Junction temperature
Operating temperature range
Storage temperature range
T
j
T
op
T
stg
200
65 É + 200
65 É + 200
C
C
Thermal Resistance
Junction soldering point
1)
The maximum permissible base current for
2)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Draft A03 1998-04-01
2)
V
measurements is 30 mA (spot measurement duration < 1 s).
FBE
R
th JS
< 165 K/W
Page 2
Electrical Characteristics
m
m
m
m
BFY 193
Table 2 DC Characteristics at
T
= 25 ° C unless otherwise specified
A
Parameter Symbol Limit Values Unit
min. typ. max.
Collector-base cutoff current
V
= 20 V,
CB
I
= 0
E
Collector-emitter cutoff current
V
CE
= 12 V,
I
= 0.5 m A
B
3)
Collector-base cutoff current
V
= 10 V,
CB
I
= 0
E
Emitter-base cutoff current
V
= 2 V,
EB
I
= 0
C
Emitter-base cutoff current
V
= 1 V,
EB
I
= 0
C
Base-emitter forward voltage
I
= 30 mA, IC = 0
E
DC current gain
I
= 30 mA, VCE = 8 V
C
I
CBO
I
CEX
I
CBO
I
EBO
I
EBO
V
h
FBE
FE
-- 100
-- 600
A
A
-- 50 nA
-- 25
-- 0.5
A
A
--1V
50 100 175 -
3)
This test assures
V
(BR)CE0
> 12 V.
Semiconductor Group 2 Draft A03 1998-04-01
Page 3
BFY 193
Table 3 AC Characteristics at TA = 25 °C unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Transition frequency
I
= 40 mA, VCE = 5 V, f = 500 MHz
C
I
= 50 mA, VCE = 8 V, f = 500 MHz
C
Collector-base capacitance
V
= 10 V, VBE = vbe = 0, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, VBE = vbe = 0, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, VCB = vcb = 0, f = 1 MHz
EB
Noise figure
I
= 15 mA, VCE = 5 V, f = 2 GHz,
C
Z
= Z
S
Sopt
Power gain
I
= 40 mA, VCE = 5 V, f = 2 GHz,
C
Z
= Z
S
Sopt
, ZL = Z
Lopt
Transducer gain
I
= 40 mA, VCE = 5 V, f = 2 GHz,
C
Z
= ZL = 50 W
S
f
T
C
C
C
F
G
½S
CB
CE
EB
ma
21e
GHz
6.5
-
7.5
8
-
-
- 0.56 0.75 pF
- 0.34 - pF
- 1.9 2.4 pF
- 2.3 2.9 dB
4)
½
12.5 13.5 - dB
2
89- dB
Output power
I
= 50 mA, VCE = 5 V, f = 2 GHz,
C
P
= 10 dBm, ZS = ZL = 50 W
IN
4)
G
ma
S21
==
-----------
kk
S12
2
1ÐÐ()Gms,
P
out
S21
-----------
S12
16.5 17.5 - dBm
Semiconductor Group 3 Draft A03 1998-04-01
Page 4
BFY 193
Order Instructions
Full type variant including quality level must be specified by the orderer. For HiRel
Discrete and Microwave Semiconductors the ordering code specifies device family and
quality level.
Ordering Form:
Ordering Code: QÉ
BFY193 (x) (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1701
BFY193 ES
For BFY193 in ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group 4 Draft A03 1998-04-01
Page 5
1.02
2
±0.1
1.05
0.76
BFY 193
±0.25
±0.1
0.5
3
Figure 1 Micro-X1 Package
X Y
1.78
1
-0.2
4.2
±0.1
ø1.65
4
+0.05
0.1
-0.03
GXM05552
Semiconductor Group 5 Draft A03 1998-04-01
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