Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D
High power gain
D
Low noise figure
3
2
BFW92
Vishay Telefunken
94 9308
1
13623
BFW92 Marking: BFW92
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
25 V
15 V
2.5 V
25 mA
300 mW
150
–55 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85040
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
Page 2
BFW92
qy
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2.5 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA h
VCE = 1 V, IC = 25 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz f
VCE = 5 V, IC = 14 mA, f = 300 MHz f
VCE = 5 V, IC = 25 mA, f = 300 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 5 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W,
f = 500 MHz
Power gain VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 200 MHz
VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 800 MHz
Signal–to–intermodulation
ratio
VCE = 6 V, IC = 10 mA, ZL = 37.5 W,
V1 = 100 mV, f1 = 183 MHz,
V2 = 100 mV, f2 = 200 MHz,
f
= 217 MHz
dIM
F 3.5 dB
G
G
d
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
T
T
T
cb
ce
eb
pe
pe
IM
100mA
100 nA
10
m
A
15 V
0.1 0.6 V
20 100 150
20
1 1.5 GHz
2.4 GHz
1.3 2.1 GHz
0.5 pF
0.3 pF
0.9 pF
23 dB
11 dB
–45 dB
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Document Number 85040
Rev. 3, 20-Jan-99
Page 3
BFW92
Vishay Telefunken
Typical Characteristics (T
400
350
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )12845
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
3000
2500
2000
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13609
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
f=1MHz
1500
1000
500
T
f – Transition Frequency ( MHz )
0
0 5 10 15 20 25 30 35 40
IC – Collector Current ( mA )13608
VCE=5V
f=300MHz
Figure 2. Transition Frequency vs. Collector Current
Document Number 85040
Rev. 3, 20-Jan-99
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3 (5)
Page 4
BFW92
Vishay Telefunken
Dimensions of BFW92 in mm
96 12244
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Document Number 85040
Rev. 3, 20-Jan-99
Page 5
BFW92
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85040
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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