Datasheet BFT93W Datasheet (Philips)

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Page 1

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT93W

PNP 4 GHz wideband transistor

Product speciﬁcation Supersedes data of November 1992 File under Discrete Semiconductors, SC14

Philips Semiconductors

March 1994

Page 2

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

FEATURES

• High power gain

• Gold metallization ensures

excellent reliability

• SOT323 (S-mini) package.

APPLICATIONS

It is intended as a general purpose transistor for wideband applications up to 2 GHz.

DESCRIPTION

Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93.

PINNING

PIN DESCRIPTION

base

emitter

collector

handbook, 2 columns

Top view

BFT93W Marking code: X1.

Fig.1 SOT323.

MBC870

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V V I P h C f

CBO CEO

tot FE

collector-base voltage open emitter −−−15 V collector-emitter voltage open base −−−12 V collector current (DC) −−−50 mA total power dissipation up to Ts=93°C; note 1 −−300 mW DC current gain IC= −30 mA; VCE= −5 V 20 50 − feedback capacitance IC= 0; VCE= −5 V; f = 1 MHz − 1 − pF transition frequency IC= −30 mA; VCE= −5V;

− 4 − GHz

f = 500 MHz

F noise ﬁgure I

maximum unilateral power gain IC= −30 mA; VCE= −5V;

f = 500 MHz; T

= −10 mA; VCE= −5V;

amb

=25°C

− 15.5 − dB

− 2.4 − dB

f = 500 MHz

junction temperature −−150 °C

Note

is the temperature at the soldering point of the collector pin.

1. T

March 1994 2

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Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

CBO

CEO

EBO

tot

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-s

collector-base voltage open emitter −−15 V collector-emitter voltage open base −−12 V emitter-base voltage open collector −−2V collector current (DC) −−50 mA total power dissipation up to Ts=93°C; note 1 − 300 mW storage temperature −65 +150 °C junction temperature − 150 °C

thermal resistance from junction to soldering point up to Ts=93°C; note 1 190 K/W

Note to the “Limiting values” and “Thermal characteristics”

1. T

is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

=25°C (unless otherwise speciﬁed).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO

h f

collector cut-off current IE= 0; VCB= −5V −−−50 nA DC current gain IC= −30 mA; VCE= −5 V 20 50 − transition frequency IC= −30 mA; VCE= −5V;

f = 500 MHz; T

amb

=25°C

collector capacitance IE=ie= 0; VCB= −5V;

− 4 − GHz

− 1.2 − pF

f = 1 MHz

emitter capacitance IC=ic= 0; VEB= −0.5 V;

− 1.4 − pF

f = 1 MHz

feedback capacitance IC= 0; VCE= −5V;

− 1 − pF

f = 1 MHz

maximum unilateral power gain; note 1

F noise ﬁgure Γ

IC= −30 mA; VCE= −5V; f = 500 MHz; T

= −30 mA; VCE= −5V;

f = 1 GHz; T

= Γ

; IC= −10 mA;

opt

amb

=25°C

amb

=25°C

− 15.5 − dB

− 10 − dB

− 2.4 − dB

VCE= −5 V; f = 500 MHz

= Γ

opt

; IC= −10 mA;

− 3 − dB

VCE= −5 V; f = 1 GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

March 1994 3

-----------------------------------------------------------1s

–()1s

–()

dB.log=

Page 4

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

150

MLB424

T ( C)

400

tot

(mW)

300

200

100

0 50 100 200

Fig.2 Power derating as a function of the soldering

point temperature.

MLB425

I (mA)

VCE= −5V; Tj=25°C.

10 20 40

Fig.3 DC current gain as a function of collector

current, typical values.

(pF)

1.6

1.2

0.8

0.4

IC= 0; f = 1 MHz.

12 16

V (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical values.

MLB426

V =

CE 10 V

5 V

I (mA)

MLB427

(GHz)

f = 500 MHz; T

amb

101

=25°C.

Fig.5 Transition frequency as a function of

collector current, typical values.

March 1994 4

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Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

MSG G

I (mA)

MLB428

gain (dB)

VCE= −5 V; f = 500 MHz.

10 20 40

Fig.6 Gain as a function of collector current,

typical values.

MSG G

I (mA)

MLB429

gain (dB)

VCE= −5 V; f = 1 GHz.

10 20 40

Fig.7 Gain as a function of collector current,

typical values.

gain (dB)

MSG

VCE= −5 V; IC= −10 mA.

Fig.8 Gain as a function of frequency,

typical values.

MLB430

max

f (MHz)

gain (dB)

MSG

VCE= −5 V; IC= −30 mA.

f (MHz)

MLB431

max

Fig.9 Gain as a function of frequency,

typical values.

March 1994 5

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Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

1.0

0.8

0.6

135

0.5

VCE= −10 V; IC= −30 mA.

0.2

3 GHz

0.4

0.2

180

0.2 0.5 1 2 5

0.2

0.5

135

40 MHz

MLB434

1.0

Fig.10 Common emitter input reflection coefficient (s11), typical values.

135

40 MHz

180

50 40 30 20 10

135

3 GHz

VCE= −10 V; IC= −30 mA.

Fig.11 Common emitter forward transmission coefficient (s21), typical values.

March 1994 6

MLB435

Page 7

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

VCE= −10 V; IC= −30 mA.

135

3 GHz

0.5 0.4 0.3 0.2 0.1

180

135

40 MHz

MLB436

Fig.12 Common emitter reverse transmission coefficient (s12), typical values.

1.0

0.8

0.6

135

0.5

0.2

180

0.2 0.5 1 2 5

3 GHz

0.2

0.5

135

VCE= −10 V; IC= −30 mA.

Fig.13 Common emitter output reflection coefficient (s22), typical values.

March 1994 7

0.4

0.2

40 MHz

MLB437

1.0

Page 8

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

(dB)

VCE= −5V.

101

1 GHz

500 MHz

I (mA)

Fig.14 Minimum noise figure as a function of

collector current, typical values.

MLB432

f (MHz)

MLB433

(dB)

VCE= −5V.

I =

C 30 mA

20 mA

10 mA

5 mA

Fig.15 Minimum noise figure as a function of

frequency, typical values.

March 1994 8

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Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

1.0

0.8

0.6

0.4

0.2

180

135

0.2

0.2 0.5

0.5

F = 2.40 dB

min

opt

1 2 5

F = 3 dB

0.2

135

VCE= −5 V; IC= −10 mA; f = 500 MHz; Zo=50Ω.

Fig.16 Common emitter noise figure circles, typical values.

135

0.2

180

F = 4 dB

F = 5 dB

0.5

MLB438

1.0

0.8

0.6

0.4

0.2

F = 2.90 dB

min

opt

1 2 50.5

F = 3.5 dB

0.2

F = 4 dB

F = 5 dB

0.5

135

VCE= −5 V; IC= −10 mA; f = 1 GHz; Zo=50Ω.

Fig.17 Common emitter noise figure circles, typical values.

March 1994 9

MLB439

1.0

Page 10

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

SPICE parameters for the BFT93W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 835.1 aA 2 BF 48.56 − 3 NF 1.000 − 4 VAF 19.01 V 5 IKF 146.8 mA 6 ISE 90.94 fA 7 NE 1.749 − 8 BR 12.18 − 9 NR 997.6 m 10 VAR 3.374 V 11 IKR 6.742 mA 12 ISC 23.42 fA 13 NC 1.449 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 200.0 mΩ 18 RC 3.800 Ω

(1)

19 20 21

(1) (1)

XTB 0.000 − EG 1.110 EV

XTI 3.000 − 22 CJE 1.570 pF 23 VJE 600.0 mV 24 MJE 382.2 m 25 TF 14.85 ps 26 XTF 2.209 − 27 VTF 2.989 V 28 ITF 14.37 mA 29 PTF 0.000 deg 30 CJC 1.995 pF 31 VJC 584.4 mV 32 MJC 281.3 m 33 XCJC 120.0 m 34 TR 3.000 ns

(1)

CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

(1)

36 37

(1)

VJS 750.0 mV MJS 0.000 −

38 FC 811.6 m

Note

1. These parameters have not been extracted, the default values are shown.

B,E

(f)=QL

B,E

√(f/Fc);

CB' C'

MBC964

handbook, halfpage

L1 L2

QLB= 50; QLE= 50; QL Fc = scaling frequency = 1 GHz.

be ce

Fig.18 Package equivalent circuit SOT323.

List of components (see Fig.18).

DESIGNATION VALUE UNIT

2fF 100 fF

100 fF L1 0.34 nH L2 0.10 nH L3 0.34 nH L

0.60 nH

March 1994 10

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Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 1 Common emitter scattering parameters: VCE= −5 V; IC= −5 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.759 100 0.711 200 0.630 300 0.586 400 0.566 500 0.557 600 0.551 700 0.546 800 0.543 900 0.541

1000 0.541 1200 0.549 1400 0.559 1600 0.565 1800 0.566 2000 0.575 2200 0.594 2400 0.613 2600 0.623 2800 0.618 3000 0.621

ANGLE

(deg)

MAGNITUDE

(ratio)

−20.5 11.294 165.0

−49.0 10.079 147.7

−88.0 8.082 126.7

−113.6 6.355 113.1

−130.5 5.116 104.1

−141.8 4.266 97.5

−150.5 3.653 92.2

−157.1 3.193 87.7

−162.7 2.838 83.9

−167.6 2.551 80.4

−172.0 2.323 77.4

−179.4 1.975 71.7

174.8 1.737 66.4

170.3 1.555 61.7

165.6 1.420 57.7

160.5 1.310 54.2

156.3 1.217 51.1

153.7 1.135 47.7

151.4 1.064 44.8

148.2 1.019 41.7

144.5 0.975 39.3

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.023 78.5 0.945

0.050 64.5 0.834

0.076 51.2 0.631

0.090 45.1 0.491

0.099 42.9 0.403

0.107 42.8 0.349

0.113 43.7 0.316

0.120 44.9 0.293

0.127 46.2 0.277

0.133 47.6 0.263

0.140 49.1 0.249

0.153 51.6 0.223

0.168 53.8 0.212

0.183 55.2 0.215

0.197 56.8 0.220

0.213 58.3 0.215

0.228 59.7 0.208

0.242 60.6 0.217

0.255 60.9 0.242

0.271 61.5 0.264

0.289 61.9 0.275

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−12.3 34.5

−27.8 28.3

−44.0 22.5

−52.8 19.1

−58.5 16.6

−62.5 14.8

−65.2 13.3

−66.8 12.0

−67.7 10.9

−68.1 9.9

−68.7 9.1

−71.8 7.7

−78.3 6.6

−84.5 5.7

−87.5 4.9

−91.0 4.3

−98.1 3.8

−107.7 3.4

−114.1 2.9

−116.9 2.6

−119.3 2.2

Table 2 Noise data: V

(MHz)

= −5 V; IC= −5 mA.

min

(dB)

(ratio) (deg)

500 1.80 0.307 86.5 0.320

1000 2.55 0.358 121.0 0.280

March 1994 11

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Page 12

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 3 Common emitter scattering parameters: VCE= −5 V; IC= −10 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.608 100 0.571 200 0.538 300 0.531 400 0.531 500 0.532 600 0.534 700 0.533 800 0.532 900 0.534

1000 0.535 1200 0.545 1400 0.557 1600 0.561 1800 0.563 2000 0.574 2200 0.593 2400 0.612 2600 0.620 2800 0.616 3000 0.618

ANGLE

(deg)

MAGNITUDE

(ratio)

−31.5 18.195 160.2

−72.1 15.044 138.8

−114.5 10.475 117.4

−136.1 7.676 106.0

−149.0 5.989 98.6

−157.3 4.907 93.2

−163.6 4.161 88.9

−168.6 3.613 85.1

−172.9 3.195 81.8

−176.8 2.866 78.8

179.7 2.603 76.2

173.7 2.206 71.2

169.2 1.931 66.6

165.5 1.724 62.2

161.2 1.570 58.5

156.6 1.447 55.2

153.0 1.343 52.4

150.6 1.251 49.2

148.8 1.171 46.3

146.0 1.122 43.2

142.3 1.074 40.7

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.020 75.6 0.900

0.041 60.6 0.725

0.059 51.1 0.490

0.070 49.3 0.360

0.079 50.2 0.287

0.088 51.8 0.245

0.097 53.8 0.221

0.106 55.4 0.204

0.116 56.9 0.192

0.125 58.1 0.179

0.135 59.3 0.167

0.153 61.0 0.145

0.172 62.0 0.140

0.191 62.3 0.149

0.208 62.7 0.154

0.227 63.2 0.150

0.244 63.7 0.148

0.260 64.0 0.165

0.274 63.5 0.192

0.290 63.3 0.213

0.309 63.2 0.223

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−18.0 34.4

−38.4 28.5

−56.6 23.1

−66.3 19.7

−73.0 17.4

−77.9 15.5

−81.4 14.1

−83.2 12.8

−84.2 11.7

−84.5 10.7

−85.3 9.9

−90.1 8.5

−98.7 7.4

−104.6 6.5

−106.3 5.7

−109.4 5.0

−117.9 4.5

−127.5 4.1

−131.8 3.6

−132.1 3.3

−133.3 2.9

Table 4 Noise data: V

(MHz)

= −5 V; IC= −10 mA.

min

(dB)

(ratio) (deg)

500 2.40 0.304 94.7 0.430

1000 2.90 0.321 136.9 0.270

March 1994 12

opt

Page 13

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 5 Common emitter scattering parameters: VCE= −5 V; IC= −20 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.450 100 0.475 200 0.502 300 0.516 400 0.526 500 0.530 600 0.534 700 0.535 800 0.536 900 0.538

1000 0.541 1200 0.554 1400 0.566 1600 0.571 1800 0.573 2000 0.585 2200 0.604 2400 0.624 2600 0.633 2800 0.626 3000 0.629

ANGLE

(deg)

MAGNITUDE

(ratio)

−49.1 25.274 154.6

−99.1 18.682 130.2

−135.9 11.661 110.7

−151.8 8.244 101.0

−161.1 6.342 94.7

−167.1 5.156 90.2

−171.9 4.350 86.3

−175.7 3.768 83.0

−179.1 3.326 80.1

177.7 2.980 77.3

174.9 2.703 74.9

169.8 2.285 70.3

166.1 1.995 65.9

162.6 1.777 61.7

158.8 1.616 58.2

154.4 1.488 55.0

151.0 1.380 52.4

148.8 1.285 49.4

147.1 1.200 46.6

144.3 1.148 43.5

140.8 1.100 41.0

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.018 72.5 0.830

0.034 59.2 0.608

0.047 54.5 0.379

0.058 55.6 0.270

0.068 58.1 0.215

0.079 60.1 0.185

0.089 61.9 0.169

0.101 63.2 0.157

0.112 64.0 0.147

0.123 64.8 0.137

0.134 65.4 0.127

0.154 66.2 0.111

0.175 66.6 0.112

0.195 66.0 0.125

0.214 66.0 0.130

0.234 66.1 0.127

0.252 66.2 0.130

0.268 66.2 0.152

0.282 65.5 0.180

0.299 65.0 0.199

0.319 64.7 0.208

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−24.1 34.1

−47.9 28.5

−67.2 23.3

−77.9 20.0

−86.1 17.7

−92.5 15.8

−96.7 14.4

−98.7 13.1

−99.8 12.0

−100.5 11.1

−101.9 10.2

−109.1 8.8

−118.8 7.7

−122.9 6.8

−123.1 6.0

−126.2 5.3

−135.1 4.8

−143.0 4.4

−144.7 3.9

−143.3 3.5

−143.7 3.2

Table 6 Noise data: V

(MHz)

= −5 V; IC= −20 mA.

min

(dB)

(ratio) (deg)

500 2.80 0.301 100.8 0.610

1000 3.60 0.356 152.2 0.280

March 1994 13

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Page 14

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 7 Common emitter scattering parameters: VCE= −5 V; IC= −30 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.382 100 0.453 200 0.502 300 0.521 400 0.532 500 0.537 600 0.542 700 0.543 800 0.545 900 0.548

1000 0.552 1200 0.565 1400 0.577 1600 0.584 1800 0.586 2000 0.598 2200 0.620 2400 0.639 2600 0.646 2800 0.642 3000 0.644

ANGLE

(deg)

MAGNITUDE

(ratio)

−62.3 28.063 151.4

−113.1 19.479 126.1

−144.8 11.682 107.7

−158.0 8.162 98.8

−165.8 6.248 92.9

−170.8 5.069 88.6

−174.9 4.269 84.9

−178.2 3.692 81.7

178.7 3.258 78.8

176.0 2.917 76.1

173.2 2.644 73.8

168.6 2.233 69.2

165.0 1.948 64.9

161.7 1.734 60.8

157.9 1.577 57.3

153.6 1.451 54.2

150.3 1.345 51.5

148.1 1.251 48.7

146.3 1.169 46.0

143.4 1.118 43.0

139.8 1.071 40.5

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.016 71.2 0.781

0.030 58.8 0.543

0.043 56.8 0.327

0.054 58.9 0.232

0.065 61.4 0.185

0.076 63.4 0.161

0.088 65.0 0.148

0.099 65.8 0.139

0.111 66.4 0.131

0.122 67.0 0.123

0.133 67.4 0.114

0.154 68.0 0.101

0.175 68.2 0.105

0.195 67.5 0.119

0.214 67.3 0.125

0.234 67.3 0.124

0.252 67.5 0.129

0.269 67.5 0.152

0.284 66.6 0.181

0.300 66.2 0.200

0.321 65.7 0.210

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−27.1 33.7

−51.8 28.3

−70.7 23.1

−81.5 19.8

−89.9 17.5

−96.5 15.7

−100.5 14.2

−102.3 13.0

−103.2 11.9

−103.6 10.9

−104.8 10.1

−112.5 8.7

−121.9 7.6

−125.4 6.7

−125.0 5.8

−128.3 5.2

−137.0 4.8

−144.6 4.3

−146.1 3.8

−144.7 3.4

−145.0 3.1

Table 8 Noise data: V

(MHz)

= −5 V; IC= −30 mA.

min

(dB)

(ratio) (deg)

500 3.40 0.308 104.2 0.830

1000 4.20 0.380 164.0 0.310

March 1994 14

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Page 15

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 9 Common emitter scattering parameters: VCE= −10 V; IC= −5 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.837 100 0.781 200 0.670 300 0.592 400 0.547 500 0.523 600 0.507 700 0.495 800 0.487 900 0.481

1000 0.478 1200 0.483 1400 0.493 1600 0.499 1800 0.501 2000 0.509 2200 0.529 2400 0.550 2600 0.564 2800 0.564 3000 0.569

ANGLE

(deg)

MAGNITUDE

(ratio)

−16.8 11.098 166.4

−40.2 10.061 150.4

−73.9 8.331 130.4

−98.6 6.727 116.7

−116.1 5.490 107.3

−128.7 4.616 100.5

−138.6 3.971 94.9

−146.1 3.476 90.3

−152.5 3.094 86.3

−158.1 2.782 82.6

−163.1 2.532 79.5

−171.8 2.155 73.7

−178.2 1.895 68.4

176.9 1.694 63.6

172.0 1.541 59.6

166.5 1.418 55.9

161.8 1.317 52.6

158.8 1.228 49.0

156.7 1.148 45.9

153.7 1.100 42.8

150.0 1.051 40.2

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.020 80.4 0.947

0.046 67.6 0.856

0.073 54.7 0.674

0.088 48.3 0.537

0.098 45.8 0.447

0.106 45.2 0.389

0.114 45.6 0.352

0.121 46.4 0.327

0.129 47.3 0.309

0.136 48.2 0.294

0.143 49.3 0.279

0.156 51.0 0.250

0.171 52.4 0.234

0.185 53.2 0.232

0.198 54.4 0.233

0.212 55.5 0.227

0.224 56.5 0.215

0.236 57.2 0.215

0.246 57.5 0.232

0.259 58.2 0.253

0.274 58.9 0.262

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−10.2 36.0

−23.6 29.9

−38.2 23.6

−46.3 19.9

−51.2 17.3

−54.5 15.4

−56.5 13.8

−57.6 12.5

−58.0 11.4

−57.8 10.4

−57.8 9.5

−59.2 8.1

−63.8 7.0

−69.2 6.1

−71.8 5.3

−74.1 4.6

−79.5 4.0

−88.7 3.6

−96.4 3.1

−100.1 2.8

−102.7 2.4

Table 10 Noise data: V

(MHz)

= −10 V; IC= −5 mA.

min

(dB)

(ratio) (deg)

500 2.00 0.340 73.0 0.440

1000 2.50 0.380 105.0 0.360

March 1994 15

opt

Page 16

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 11 Common emitter scattering parameters: VCE= −10 V; IC= −10 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.744 100 0.666 200 0.556 300 0.507 400 0.485 500 0.474 600 0.469 700 0.465 800 0.461 900 0.459

1000 0.460 1200 0.469 1400 0.482 1600 0.488 1800 0.489 2000 0.501 2200 0.522 2400 0.543 2600 0.557 2800 0.556 3000 0.560

ANGLE

(deg)

MAGNITUDE

(ratio)

−24.2 18.034 162.0

−56.4 15.339 142.3

−95.4 11.171 121.0

−119.1 8.353 109.0

−134.4 6.576 101.2

−144.5 5.412 95.6

−152.4 4.597 91.1

−158.4 3.997 87.2

−163.5 3.537 83.9

−168.1 3.170 80.8

−172.3 2.875 78.2

−179.3 2.435 73.1

175.4 2.130 68.4

171.5 1.898 64.1

167.2 1.723 60.4

162.2 1.584 57.0

158.0 1.469 54.0

155.4 1.367 50.7

153.8 1.278 47.8

151.0 1.222 44.7

147.6 1.168 42.1

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.019 77.2 0.902

0.040 63.6 0.757

0.059 53.5 0.533

0.071 50.8 0.398

0.081 51.0 0.319

0.090 52.2 0.272

0.099 53.7 0.243

0.108 54.9 0.224

0.118 56.1 0.209

0.128 57.0 0.196

0.137 57.8 0.183

0.155 59.1 0.157

0.173 59.8 0.144

0.191 59.7 0.147

0.207 59.9 0.150

0.224 60.3 0.144

0.239 60.6 0.134

0.253 60.7 0.140

0.264 60.3 0.162

0.278 60.4 0.183

0.295 60.4 0.192

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−15.2 35.9

−33.0 30.0

−49.6 24.0

−57.9 20.5

−63.2 18.0

−66.9 16.1

−69.2 14.6

−70.3 13.3

−70.3 12.2

−69.7 11.2

−69.3 10.4

−71.0 8.9

−77.4 7.8

−83.7 6.8

−85.2 6.0

−87.1 5.3

−94.3 4.8

−106.3 4.3

−113.7 3.9

−115.3 3.5

−116.6 3.1

Table 12 Noise data: V

(MHz)

= −10 V; IC= −10 mA.

min

(dB)

(ratio) (deg)

500 2.40 0.270 83.0 0.400

1000 2.90 0.350 115.0 0.350

March 1994 16

opt

Page 17

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 13 Common emitter scattering parameters: VCE= −10 V; IC= −20 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.655 100 0.568 200 0.487 300 0.463 400 0.456 500 0.453 600 0.453 700 0.451 800 0.451 900 0.452

1000 0.454 1200 0.467 1400 0.482 1600 0.490 1800 0.493 2000 0.505 2200 0.528 2400 0.550 2600 0.563 2800 0.562 3000 0.565

ANGLE

(deg)

MAGNITUDE

(ratio)

−33.6 25.207 156.9

−73.8 19.459 133.9

−113.4 12.634 113.7

−134.1 9.050 103.5

−146.7 6.997 96.9

−154.7 5.702 92.1

−161.0 4.818 88.2

−165.7 4.171 84.8

−169.9 3.683 81.8

−173.7 3.297 79.0

−177.3 2.986 76.6

176.6 2.521 71.9

172.4 2.200 67.6

168.8 1.956 63.6

164.8 1.774 60.1

159.8 1.630 56.8

155.9 1.509 54.1

153.6 1.405 51.0

151.9 1.312 48.1

149.2 1.253 45.2

145.8 1.199 42.6

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.018 74.2 0.840

0.035 61.0 0.644

0.050 54.9 0.416

0.061 55.1 0.299

0.072 56.9 0.236

0.082 58.5 0.200

0.093 60.0 0.179

0.104 61.0 0.165

0.115 61.8 0.155

0.126 62.4 0.143

0.137 62.9 0.132

0.157 63.4 0.110

0.176 63.4 0.103

0.195 62.8 0.110

0.212 62.7 0.114

0.230 62.7 0.109

0.245 62.8 0.103

0.260 62.7 0.115

0.273 62.2 0.141

0.287 62.0 0.160

0.305 61.7 0.169

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−20.3 35.8

−41.3 29.8

−58.0 24.0

−66.3 20.6

−72.0 18.2

−76.3 16.3

−79.0 14.8

−79.9 13.5

−79.9 12.4

−79.0 11.4

−78.5 10.6

−81.6 9.2

−90.5 8.0

−97.4 7.1

−98.0 6.2

−100.1 5.6

−109.7 5.0

−122.8 4.6

−128.2 4.1

−127.8 3.7

−128.3 3.4

Table 14 Noise data: V

(MHz)

= −10 V; IC= −20 mA.

min

(dB)

(ratio) (deg)

500 3.00 0.240 98.0 0.440

1000 3.60 0.320 131.0 0.400

March 1994 17

opt

Page 18

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

Table 15 Common emitter scattering parameters: VCE= −10 V; IC= −30 mA.

(MHz)

MAGNITUDE

(ratio)

40 0.617 100 0.529 200 0.464 300 0.449 400 0.446 500 0.446 600 0.448 700 0.449 800 0.450 900 0.452

1000 0.456 1200 0.472 1400 0.488 1600 0.498 1800 0.502 2000 0.516 2200 0.539 2400 0.562 2600 0.575 2800 0.573 3000 0.576

ANGLE

(deg)

MAGNITUDE

(ratio)

−39.1 28.045 153.9

−82.4 20.389 129.6

−120.8 12.630 110.4

−139.7 8.920 101.0

−151.0 6.853 94.8

−158.1 5.569 90.3

−163.5 4.694 86.5

−167.8 4.060 83.3

−171.7 3.579 80.4

−175.1 3.204 77.7

−178.5 2.902 75.4

175.9 2.448 70.8

171.7 2.134 66.6

168.1 1.898 62.5

164.0 1.721 59.1

159.3 1.580 56.0

155.4 1.464 53.2

152.9 1.362 50.2

151.2 1.273 47.4

148.4 1.217 44.5

144.7 1.164 42.0

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

0.017 73.1 0.797

0.032 60.3 0.583

0.047 56.4 0.364

0.058 57.3 0.259

0.069 59.4 0.204

0.081 60.9 0.174

0.092 62.2 0.158

0.103 63.0 0.147

0.115 63.6 0.139

0.126 63.8 0.131

0.136 64.1 0.122

0.157 64.3 0.103

0.176 64.2 0.097

0.194 63.6 0.106

0.211 63.4 0.112

0.229 63.5 0.108

0.245 63.7 0.103

0.260 63.6 0.116

0.272 63.0 0.141

0.287 62.9 0.162

0.305 62.6 0.172

MAGNITUDE

(ratio)

ANGLE

(dB)

(deg)

−22.6 35.4

−44.1 29.4

−59.3 23.7

−66.3 20.3

−71.2 17.9

−75.0 16.0

−77.2 14.5

−77.7 13.2

−77.1 12.1

−75.9 11.2

−75.0 10.3

−77.7 8.9

−87.1 7.8

−94.6 6.9

−95.7 6.0

−98.0 5.4

−108.1 4.8

−121.5 4.4

−127.4 3.9

−127.3 3.5

−128.1 3.2

Table 16 Noise data: V

(MHz)

= −10 V; IC= −30 mA.

min

(dB)

(ratio) (deg)

500 3.60 0.250 101.0 0.550

1000 4.20 0.310 143.0 0.480

March 1994 18

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Page 19

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

max

0.1

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

1.35

1.15

REFERENCES

1.3

0.65

UNIT

1.1

0.8

OUTLINE VERSION

SOT323 SC-70

March 1994 19

2.2

2.0

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Page 20

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

March 1994 20

Page 21

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

March 1994 21

Page 22

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

March 1994 22

Page 23

Philips Semiconductors Product speciﬁcation

PNP 4 GHz wideband transistor BFT93W

NOTES

March 1994 23

Page 24

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