Datasheet BFT93 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT93

PNP 5 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

November 1992

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

DESCRIPTION

PNP transistor in a plastic SOT23
envelope.

It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,

PINNING

PIN DESCRIPTION

Code: X1p
1 base
2 emitter
3 collector

page

3

etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has

12

Top view

MSB003

excellent wideband properties and
low noise up to high frequencies.

NPN complements are BFR93 and

Fig.1 SOT23.

BFR93A.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
P
f

CBO
CEO

c

tot

T

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−12 V
DC collector current −−35 mA
total power dissipation up to Ts=95°C; note 1 − 300 mW
transition frequency IC= −30 mA; VCE= −5 V; f = 500 MHz;

5 − GHz

Tj=25°C

C

re

G

UM

F noise figure I

V

o

feedback capacitance IC= −2 mA; VCE= −5 V; f = 1 MHz 1 − pF
maximum unilateral power gain IC= −30 mA; VCE= −5 V; f = 500 MHz;

T

=25°C

amb

= −10 mA; VCE= −5 V; f = 500 MHz;

C

T

=25°C

amb

output voltage dim= −60 dB; IC= −30 mA;

16.5 − dB

2.4 − dB

300 − mV
VCE= −5 V; RL=75Ω;
f

= 493.25 MHz

(p+q−r)

Note

1. T

is the temperature at the soldering point of the collector tab.

s

November 1992 2

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−12 V
emitter-base voltage open collector −−2V
DC collector current −−35 mA
peak collector current f > 1 MHz −−50 mA
total power dissipation up to Ts=95°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C

thermal resistance from junction to

up to Ts=70°C; (note 1) 260 K/W

soldering point

Note

1. T

is the temperature at the soldering point of the collector tab.

s

November 1992 3

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

F noise figure I

V

o

collector cut-off current IE = 0; VCB = −5 V −− −50 nA
DC current gain IC = −30 mA; VCE = −5 V 20 50 −
transition frequency IC= −30 mA; VCE= −5 V;

− 5 − GHz

f = 500 MHz
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 0.95 − pF
emitter capacitance Ic=ic=0;VEB = −0.5 V; f = 1 MHz − 1.8 − pF
feedback capacitance IC= −2 mA; VCE= −5 V; f = 1 MHz − 1 − pF
maximum unilateral power gain

(note 1)

IC= −30 mA; VCE= −5V;

f = 500 MHz; T

= −10 mA; VCE= −5V;

C

f = 500 MHz; T

amb

amb

=25°C

=25°C

− 16.5 − dB

− 2.4 − dB

output voltage see Fig.2 and note 2 − 300 − mV

Notes

1. G

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S



11

2

–

22

dB.=

2. dim= −60 dB (DIN 45004B); IC= −30 mA; VCE= −5 V; RL=75Ω;
Vp=Voat dim= −60 dB; fp= 495.25 MHz;
Vq=Vo−6 dB; fq= 503.25 MHz;
Vr=Vo−6 dB; fr= 505.25 MHz;
measured at f

) = 493.25 MHz.

(p+q−r

November 1992 4

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

handbook, halfpage

L3

390 Ω

L2

680 pF

input
75 Ω

L2 = L3 = 5 µH Ferroxcube choke, catalogue
number 3122 108 20150.

L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.

1.2 kΩ

240 Ω

680 pF

L1

Fig.2 Intermodulation distortion test circuit.

24 V

560 Ω

DUT

16 Ω

680 pF

MEA383

output

75 Ω

30

–I (mA)

MEA382

C

60

handbook, halfpage

h

FE

40

20

10

0

VCE= −5V; Tj=25°C.

10 20 40

Fig.3 DC current gain as a function of collector

current.

2.0

handbook, halfpage

C

c

(pF)

1.6

1.2

0.8

0.4

0

016

IE=ie= 0; f = 1 MHz; Tj=25°C.

4

812

MEA925

20

(V)

V

CB

Fig.4 Collector capacitance as a function of

collector-base voltage.

November 1992 5

handbook, halfpage

6

f

T

(GHz)

4

2

0

01020 40

VCE= −5 V; f = 500 MHz; Tj=25°C.

30

Fig.5 Transition frequency as a function of

collector current.

MEA381

–I (mA)

C

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

handbook, halfpage

5

F

(dB)

4

3

2

1

0

050

VCE= −5 V; Zs= opt.; f = 500 MHz; T

10 20 30 40

=25°C.

amb

Fig.6 Minimum noise figure as a function of

collector current.

MEA923

I

C

(mA)

handbook, halfpage

8

F

(dB)

6

4

2

0

–1

IC= −2 mA; VCE= −5 V; Zs= opt.; T

110

f (GHz)

=25°C.

amb

Fig.7 Minimum noise figure as a function of

frequency.

MEA924

10

November 1992 6

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

mm

VERSION

A

1.1

0.9

OUTLINE

SOT23

max.

November 1992 7

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT93

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

November 1992 8