Datasheet BFT25A Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT25A

NPN 5 GHz wideband transistor

Product speciﬁcation File under Discrete Semiconductors, SC14

December 1997

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

FEATURES

• Low current consumption (100 µA − 1 mA)

• Low noise figure

• Gold metallization ensures

excellent reliability.

PINNING

PIN DESCRIPTION

Code: V10 1 base 2 emitter

page

3

3 collector

DESCRIPTION

The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as

12

Top view

MSB003

pocket telephones and paging systems with signal frequencies up to 2 GHz.

The transistor is encapsulated in a

Fig.1 SOT23.

3-pin plastic SOT23 envelope.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

collector-base voltage open emitter −−8V collector-emitter voltage open base −−5V DC collector current −−6.5 mA total power dissipation up to Ts = 165 °C;

−−32 mW

note 1

h

FE

f

T

G

UM

F noise ﬁgure Γ = Γ

DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 transition frequency IC = 1 mA; VCE = 1 V;

=25°C; f = 500 MHz

T

amb

maximum unilateral power gain

IC = 0.5 mA; VCE = 1 V; T

= 25 °C; f = 1 GHz

amb

= 0.5 mA; VCE= 1 V;

opt;IC

T

=25°C; f = 1 GHz

amb

Γ = Γ T

amb

= 1 mA; VCE= 1 V;

opt;IC

=25°C; f = 1 GHz

3.5 5 − GHz

− 15 − dB

− 1.8 − dB

− 2 − dB

Note

1. T

is the temperature at the soldering point of the collector tab.

s

December 1997 2

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter − 8V collector-emitter voltage open base − 5V emitter-base voltage open collector − 2V DC collector current − 6.5 mA total power dissipation up to Ts= 165 °C;

− 32 mW

note 1 storage temperature −65 150 °C junction temperature − 175 °C

from junction to soldering point (note 1) 260 K/W

Note

1. T

is the temperature at the soldering point of the collector tab.

s

CHARACTERISTICS

= 25 °C unless otherwise speciﬁed.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

re

G

UM

F noise ﬁgure Γ = Γ

collector cut-off current IE = 0; VCB = 5 V −−50 nA DC current gain IC= 0.5 mA; VCE = 1 V 50 80 200 transition frequency IC = 1 mA; VCE = 1 V;

T

= 25 °C; f = 500 MHz

amb

3.5 5 − GHz

feedback capacitance IC=ic= 0; VCB= 1 V; f = 1 MHz − 0.3 0.45 pF maximum unilateral power

gain (note 1)

IC = 0.5 mA; VCE = 1 V; T

= 25 °C; f = 1 GHz

amb

= 0.5 mA; VCE= 1 V;

opt;IC

T

=25°C; f = 1 GHz

amb

Γ = Γ T

amb

= 1 mA; VCE= 1 V;

opt;IC

=25°C; f = 1 GHz

− 15 − dB

− 1.8 − dB

− 2 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

G

UM

--------------------------------------------------------------

10



1S

–



2

S

21

2



–

1S



11

22

dB.log=

2

December 1997 3

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

40

handbook, halfpage

P

tot

(mW)

30

20

10

0

0 50 100 200

150

Fig.2 Power derating curve.

MBG247

Ts (oC)

110

MCD138

I (mA)

C

100

handbook, halfpage

h

FE

80

60

40

20

0

3

10

VCE= 1 V.

2

10

1

Fig.3 DC current gain as a function of collector

current.

10

0.4

handbook, halfpage

C

re

(pF)

0.3

0.2

0.1

0

Ic = ic= 0; f = 1 MHz.

1234

MCD103

5

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

December 1997 4

6

handbook, halfpage

f

T

(GHz)

4

2

0

VCE= 1 V; T

12 4

=25°C; f = 500 MHz.

amb

3

Fig.5 Transition frequency as a function of

collector current.

MCD140

I (mA)

C

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

In Figs 6 to 9, GUM= maximum unilateral power gain; MSG = maximum stable gain; G gain.

25

handbook, halfpage

gain (dB)

20

= maximum available

max

G

UM

MCD104

20

handbook, halfpage

gain (dB)

15

MCD105

G

UM

15

10

5

0

0 0.5 1.0 2.0

VCE= 1 V; f = 500 MHz.

MSG

Fig.6 Gain as a function of collector current.

50

handbook, halfpage

gain (dB)

40

G

UM

1.5 I (mA)

C

MCD106

10

MSG

5

0

0 0.5 1.0 2.0

VCE= 1 V; f = 1 GHz.

Fig.7 Gain as a function of collector current.

50

handbook, halfpage

gain (dB)

40

G

UM

1.5 I (mA)

C

MCD107

30

20

10

0

10

VCE= 1 V; Ic= 0.5 mA.

MSG

G

max

2

10

3

10

f (MHz)

4

10

Fig.8 Gain as a function of frequency.

December 1997 5

30

20

10

0

10

VCE= 1 V; Ic= 1 mA.

MSG

2

10

Fig.9 Gain as a function of frequency.

G

max

3

10

f (MHz)

4

10

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE= 1 V.

f = 2 GHz

1 GHz 500 MHz

110

IC (mA)

Fig.10 Minimum noise figure as a function of

collector current.

f

(MHz)

V

(V)

CE

I

C

(mA)

500 1 1

Noise Parameters

F

min

(dB)

Gamma (opt)

Rn/50

(mag) (ang)

1.9 0.79 4 2.5

MCD145

+

j

− j

0

0.2

handbook, halfpage

4

F

(dB)

3

2

1

0

10

VCE= 1 V.

2

3

10

Fig.11 Minimum noise figure as a function of

frequency.

1

0.5

pot. unst. region

0.2 0.5 1 2 5 10

MSG

14.5 dB

13 dB

11 dB

6 dB

2

4 dB

2.5 dB

IC = 2 mA

1 mA

0.5 mA

f (MHz)

5

MCD146

10

∞

10

stability circle

Γ

F

min

4

10

OPT = 1.9 dB

0.5

Zo=50Ω. Average gain parameter: MSG = 14.5 dB.

December 1997 6

1

Fig.12 Noise circle figure.

2

MCD108

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

1

f

(MHz)

1000 1 1

Noise Parameters

F

min

(dB)

2 0.74 8 2.6

V

CE

(V)

Gamma (opt)

(mag) (ang)

I

C

(mA)

Rn/50

0.5

pot. unst. region

0.2

+

j

0

− j

0.2

0.2 0.5 1 2 5 10 MSG

11.2 dB

10 dB

8 dB

4 dB

3 dB

2

stability circle

5

10

∞

Γ

OPT

F

= 2 dB

min

10

5

f

(MHz)

V

(V)

CE

2000 1 1

Noise Parameters

F

min

(dB)

Gamma (opt)

(mag) (ang)

2.4 0.72 26 1.7

I

C

(mA)

Rn/50

0.5

Zo=50Ω. Average gain parameter: MSG = 11.2 dB.

Fig.13 Noise circle figure.

pot. unst. region

0.5

MSG

7.7 dB

0.2 7 dB

+

j

0

− j

0.2

0.2 0.5 1 2 5 10

5 dB

2

1

stability circle

F

6 dB

min

3 dB

4 dB

Γ

OPT = 2.4 dB

MCD109

2

5

10

∞

10

5

Zo=50Ω. Average gain parameter: MSG = 7.7 dB.

December 1997 7

0.5

1

Fig.14 Noise circle figure.

2

MCD110

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

handbook, full pagewidth

VCE= 1 V; IC= 1 mA. Zo=50Ω.

1

0.5

0.2

+

j

0

− j

0.2

0.2 0.5 1 2 5 10

3 GHz

0.5

1

2

40 MHz

2

Fig.15 Common emitter input reflection coefficient (S11).

5

10

∞

10

5

MCD111

handbook, full pagewidth

VCE= 1 V; IC= 1 mA.

90°

135°

180°

40 MHz

5 4 3 2 1

−135°

3 GHz

−90°

45°

0°

−45°

MCD112

Fig.16 Common emitter forward transmission coefficient (S21).

December 1997 8

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

handbook, full pagewidth

VCE= 1 V; IC= 1 mA.

90°

135°

180°

0.5 0.4 0.3 0.2

−135°

3 GHz

40 MHz

0.1

−90°

45°

0°

−45°

MCD114

Fig.17 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

VCE= 1 V; IC= 1 mA. Zo=50Ω.

1

0.5

0.2

+

j

0

− j

0.2

0.2 0.5 1 2 5 10

3 GHz

0.5

1

2

40 MHz

2

Fig.18 Common emitter output reflection coefficient (S22).

5

10

∞

10

5

MCD113

December 1997 9

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC EIAJ

e

E

1.4

1.9

1.2

REFERENCES

0.95

e

1

UNIT

mm

A

1.1

0.9

OUTLINE

VERSION

SOT23

max.

December 1997 10

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFT25A

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

December 1997 11