Datasheet BFT25 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT25

NPN 2 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

November 1992

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

DESCRIPTION

NPN transistor in a plastic SOT23
envelope.

It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current

PINNING

PIN DESCRIPTION

Code: V1p
1 base
2 emitter
3 collector

page

3

consumption (100µA to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.

12

Top view

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

c

P

tot

f

T

C

re

G

UM

F noise figure I

collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
DC collector current − 6.5 mA
total power dissipation up to Ts= 167 °C; note 1 − 30 mW
transition frequency IC= 1 mA; VCE= 1 V; f = 500 MHz;

T

=25°C

amb

feedback capacitance IC= 1 mA; VCE= 1 V; f = 1 MHz;

=25°C

T

amb

maximum unilateral power gain IC= 1 mA; VCE= 1 V; f = 500 MHz;

T

=25°C

amb

= 1 mA; VCE= 1 V; f = 500 MHz;

C

T

=25°C

amb

2.3 − GHz

− 0.45 pF

18 − dB

3.8 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
DC collector current − 6.5 mA
peak collector current f > 1 MHz − 10 mA
total power dissipation up to Ts= 167 °C; note 1 − 30 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

November 1992 2

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to
soldering point

Note

= is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

= 25 °C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

F noise figure I

collector cut-off current IE = 0; VCB = 5 V −−50 nA
DC current gain IC = 10 µA; VCE = 1 V 20 30 −

I

= 1 mA; VCE = 1 V 20 40 −

C

transition frequency IC= 1 mA; VCE= 1 V; f = 500 MHz 1.2 2.3 − GHz
collector capacitance IE=ie= 0; VCB= 0.5 V; f = 1 MHz −− 0.6 pF
emitter capacitance Ic=ic=0;VEB = 0; f = 1 MHz −−0.5 pF
feedback capacitance IC= 1 mA; VCE= 1 V; f = 1 MHz;

T

amb

maximum unilateral power gain
(note 1)

IC= 1 mA; VCE= 1 V; f = 500 MHz;
T

amb

I

= 1 mA; VCE= 1 V; f = 800 MHz;

C

T

amb

= 0.1 mA; VCE=1V;

C

f = 500 MHz; T
I

= 1 mA; VCE= 1 V; f = 500 MHz;

C

T

amb

up to Ts= 167°C; note 1 260 K/W

−− 0.45 pF

=25°C

− 18 − dB

=25°C

− 12 − dB

=25°C

− 5.5 − dB

=25°C

amb

− 3.8 − dB

=25°C

Note

1. G

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S

–



11

22

dB.=

2

November 1992 3

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

110

MEA908

I (mA)

C

60

handbook, halfpage

h

FE

40

20

0

–3

10

VCE= 1 V; Tj=25°C.

–2

10

–1

Fig.2 DC current gain as a function of collector

current.

1

C

c

(pF)

0.8

0.6

0.4

0.2

0

10

024 8

IE=ie= 0; f = 1 MHz; Tj=25°C.

6

MEA914

V

CB

10

(V)

Fig.3 Collector capacitance as a function of

collector-base voltage.

1.5

MEA907

I (mA)

C

handbook, halfpage

3

f

T

(GHz)

2

1

0

0 0.5 1 2

VCE= 1 V; f = 500 MHz; Tj=25°C.

Fig.4 Transition frequency as a function of

collector current.

November 1992 4

handbook, halfpage

8

F

(dB)

6

4

2

0

–2

10

VCE= 1 V; ZS= opt.; f = 500 MHz; T

–1

amb

110

=25°C.

I (mA)

C

Fig.5 Minimum noise figure as a function of

collector current.

MEA909

10

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

handbook, full pagewidth

IC= 1 mA; VCE = 1 V; T

=50Ω.

Z

o

amb

+ j

– j

=25°C.

1

0.5

0.2

0

0.2

0.5

10.2 10520.5

800 MHz

1

2

5

200

500

5

2

MEA916

Fig.6 Common emitter input reflection coefficient (S11).

10

∞

10

handbook, full pagewidth

IC= 1 mA; VCE = 1 V; T

90°

60°

1

60°

amb

=25°C.

180°

150°

150°

200

120°

120°

500

800 MHz

90°

Fig.7 Common emitter forward transmission coefficient (S21).

30°

2 3

30°

MEA918

+ ϕ

0°

− ϕ

November 1992 5

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

handbook, full pagewidth

IC= 1 mA; VCE = 1 V; T

amb

90°

120°

150°

200

180°

150°

120°

90°

=25°C.

60°

800 MHz

500

0.1

60°

Fig.8 Common emitter reverse transmission coefficient (S12).

30°

0.150.05

30°

MEA917

+ ϕ

0°

− ϕ

handbook, full pagewidth

IC= 1 mA; VCE = 1 V; T

=50Ω.

Z

o

amb

1

0.5

0.2

+ j

0

– j

0.2

0.5

=25°C.

10.2 10520.5

800 MHz

1

Fig.9 Common emitter output reflection coefficient (S22).

2

5

10

∞

200

10

500

5

2

MEA915

November 1992 6

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

mm

A

1.1

0.9

OUTLINE

VERSION

SOT23

max.

November 1992 7

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

November 1992 8