Datasheet BFS540 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS540

NPN 9 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

November 1992

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

PINNING

PIN DESCRIPTION

Code: N4
1 base
2 emitter
3 collector

handbook, 2 columns

3

• SOT323 envelope.

12

DESCRIPTION

Top view

MBC870

NPN transistor in a plastic SOT323
envelope.

Fig.1 SOT323.

It is intended for RF wideband
amplifier applications such as satellite
TV systems and RF portable
communication equipment with signal
frequencies up to 2 GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

f

T

G

UM

F noise figure I

collector-base voltage open emitter −− 20 V
collector-emitter voltage open base −− 15 V
DC collector current −− 120 mA
total power dissipation up to Ts=80°C; note 1 −− 500 mW
DC current gain IC= 40 mA; VCE= 8 V; Tj=25°C 60 120 250
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

= 10 mA; VCE= 8 V; f = 900 MHz;

C

T

=25°C

amb

− 9 − GHz

− 14 − dB

− 1.3 1.7 dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CES
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation up to Ts=80°C; note 1 − 500 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

November 1992 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS

R

th j-s

thermal resistance from junction to

up to Ts=80°C; note 1 190 K/W

THERMAL

RESISTANCE

soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

T

=25°C, unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

S



21

F noise figure Γ

P

L1

collector cut-off current IE= 0; VCE=8 V −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.6 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

IC= 40 mA; VCE= 8 V; f = 900 MHz;
T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

output power at 1 dB gain
compression

= Γ

s

f = 900 MHz; T

Γ

= Γ

s

f = 900 MHz; T

Γ

= Γ

s

f = 2 GHz; T
Ic= 40 mA; VCE= 8 V; RL=50Ω;

f = 900 MHz; T

= 10 mA; VCE=8 V;

opt;IC

amb

= 40 mA; VCE=8 V;

opt;IC

amb

= 10 mA; VCE=8 V;

opt;IC

=25°C

amb

amb

=25°C

=25°C

=25°C

− 9 − GHz

− 14 − dB

− 8 − dB

12 13 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

− 21 − dBm

ITO third order intercept point note 2 − 34 − dBm

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

= 40 mA; VCE= 8 V; RL=50Ω; f = 900 MHz; T

C

--------------------------------------------------------------

10 log



1S

–



fp= 900 MHz; fq= 902 MHz; measured at f

2

S

21

2



1S



11

2

–

22

dB.=

=25°C;

amb

= 898 MHz and at f

(2p−q)

November 1992 3

(2q−p)

= 904 MHz.

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

VCE≤ 10 V.

150

Fig.2 Power derating curve.

MRC008 - 1

o

Ts(

C)

200

handbook, halfpage

h

FE

150

100

50

0

−2

10

VCE= 8 V; Tj=25°C.

−1

10

11010

MRC010

I

(mA)

C

Fig.3 DC current gain as a function of collector

current.

2

1

handbook, halfpage

C

re

(pF)

0.8

0.6

0.4

0.2

0

024681012

V (V)

IC= 0; f= 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage.

MRC001

CB

12

handbook, halfpage

f

T

(GHz)

V = 8 V

8

4

0

11010

f = 1 GHz; T

amb

=25°C.

CE

4 V

IC(mA)

Fig.5 Transition frequency as a function of

collector current.

MRC002

2

November 1992 4

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.

20

handbook, halfpage

G

UM

(dB)

16

V = 8 V

CE

12

4 V

= maximum available

max

MRC007

15

handbook, halfpage

gain

(dB)

10

MRC006

G

max

G

UM

8

4

0

0 1020304050

f = 900 MHz; T

amb

=25°C.

I (mA)

C

Fig.6 Maximum unilateral power gain as a

function of collector current.

50

handbook, halfpage

gain
(dB)

40

G

UM

30

MSG

20

MRC004

5

0

0 204060

VCE= 8 V; f = 2 GHz; T

amb

=25°C.

Fig.7 Gain as a function of collector current.

50

handbook, halfpage

gain
(dB)

40

30

20

G

MSG

UM

I (mA)

C

MRC005

G

10

0

−2

10

IC= 10 mA; VCE= 8 V; T

10

−1

amb

=25°C.

max

110

f (GHz)

Fig.8 Gain as a function of frequency.

November 1992 5

10

0

−2

10

IC= 40 mA; VCE= 8 V; T

10

amb

−1

=25°C.

Fig.9 Gain as a function of frequency.

G

max

110

f (GHz)

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

handbook, halfpage

4

F

(dB)

3

f =

2 GHz

2

900 MHz

1

500 MHz

0

11010

VCE= 8 V; T

amb

=25°C.

I (mA)

C

Fig.10 Minimum noise figure as a function of

collector current.

MRC009

2

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE= 8 V; T

amb

=25°C.

I =

C

40 mA
10 mA

110

f (GHz)

Fig.11 Minimum noise figure as a function of

frequency.

MRC003

November 1992 6

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

handbook, full pagewidth

90°

1.0

0.8

0.6

pot. unst.
region

135°

0.5

1

45°

2

IC= 10 mA; VCE= 8 V;
f = 900 MHz; Z

handbook, full pagewidth

o

=50Ω.

stability
circle

180°

0.2

0.2 0.5 1 2 5

0

0.2

−135°

F = 2 dB

F = 3 dB

0.5

F

= 1. 3 dB

min

Γ

OPT

F = 1.5 dB

1

−90°

Fig.12 Noise circle.

90°

1

135°

0.5

5

5

2

−45°

MRC079

45°

2

0.4

0.2

0°

0

1.0

1.0

0.8

0.6

0.2
F = 3 dB

F

min

Γ

0.5

OPT

F = 2.5 dB

= 2. 1 dB

−90°

IC= 10 mA; VCE= 8 V;
f = 2 GHz; Z

=50Ω.

o

G

max

180°

= 8.7 dB

0.2 0.5 1 2 5

0

Γ

MS

G = 8 dB

0.2

G = 7 dB

G = 6 dB

−135°

Fig.13 Noise circle.

November 1992 7

F = 4 dB

1

5

5

2

−45°

MRC080

0.4

0.2

0°

0

1.0

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

handbook, full pagewidth

IC= 40 mA; VCE= 8 V;

=50Ω.

Z

o

90°

1

180°

135°

0

0.2

−135°

0.5

0.2

3 GHz

0.2 0.5 1 2 5

0.5

1

−90°

2

40 MHz

2

45°

−45°

Fig.14 Common emitter input reflection coefficient (S11).

5

5

MRC062

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 40 mA; VCE= 8 V.

90°

135°

45°

40 MHz

−90°

3 GHz

0°

−45°

MRC063

180°

50 40 30 20 10

−135°

Fig.15 Common emitter forward transmission coefficient (S21).

November 1992 8

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

handbook, full pagewidth

IC= 40 mA; VCE= 8 V.

90°

135°

45°

3 GHz

180°

0.5 0.4 0.3 0.2 0.1

−135°

40 MHz

−45°

−90°

0°

MRC064

Fig.16 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 40 mA; VCE= 8 V;

=50Ω.

Z

o

90°

1

180°

135°

0

0.5

0.2

0.2 0.5 1 2 5

45°

2

5

3 GHz

40 MHz

0.2

−135°

0.5

2

1

−90°

5

−45°

MRC065

Fig.17 Common emitter output reflection coefficient (S22).

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

November 1992 9

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

November 1992 10

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS540

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

November 1992 11