Datasheet BFS520 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS520

NPN 9 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

FEATURES

• High power gain

• Low noise figure

• High transition frequency

It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.

handbook, 2 columns

3

• Gold metallization ensures
excellent reliability

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323
envelope.

PINNING

PIN DESCRIPTION

Code: N2
1 base
2 emitter
3 collector

12

Top view

MBC870

Fig.1 SOT323.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

f

T

G

UM

F noise figure I

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−70 mA
total power dissipation up to Ts=118°C; note 1 −−300 mW
DC current gain IC= 20 mA; VCE= 6 V; Tj=25°C 60 120 250
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain Ic= 20 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

= 5 mA; VCE= 6 V; f = 900 MHz;

c

T

=25°C

amb

− 9 − GHz

− 15 − dB

− 1.1 1.6 dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CES
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 70 mA
total power dissipation up to Ts=118°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

=25°C, unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

S



21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 26 − dBm

thermal resistance from junction to

up to Ts=118°C; note 1 190 K/W

soldering point

collector cut-off current IE= 0; VCE=6 V −−50 nA
DC current gain IC= 20mA; VCE= 6 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1 − pF
collector capacitance IE=ie= 0; VCB= 6 V; f = 1 MHz − 0.5 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

IC= 20 mA; VCE= 6 V; f = 900 MHz;
T

=25°C

amb

= 20 mA; VCE= 6 V; f = 2 GHz;

I

C

T

=25°C

amb

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

output power at 1 dB gain
compression

= Γ

s

f = 900 MHz; T

Γ

= Γ

s

f = 900 MHz; T

Γ

= Γ

s

f = 2 GHz; T
Ic= 20 mA; VCE= 6 V; RL=50Ω;

f = 900 MHz; T

= 5 mA; VCE=6 V;

opt;IC

=25°C

amb

= 20 mA; VCE=6 V;

opt;IC

=25°C

amb

= 5 mA; VCE=6 V;

opt;IC

=25°C

amb

=25°C

amb

− 9 − GHz

− 15 − dB

− 9 − dB

13 14 − dB

− 1.1 1.6 dB

− 1.6 2.1 dB

− 1.9 − dB

− 17 − dBm

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

= 20 mA; VCE= 6 V; RL=50Ω; f = 900 MHz; T

C

--------------------------------------------------------------

10 log



1S

–



fp= 900 MHz; fq= 902 MHz; measured at f

2

S

21

2



1S

–



11

22

dB.=

2

=25°C;

amb

= 898 MHz and at f

(2p−q)

September 1995 3

(2q−p)

= 904 MHz.

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Fig.2 Power derating curve.

MRC030 - 1

o

Ts(

C)

200

handbook, halfpage

h

FE

150

100

50

0

−2

10

VCE= 6 V; Tj=25°C.

−1

10

11010

MRC028

I

(mA)

C

Fig.3 DC current gain as a function of collector

current.

2

0.7

handbook, halfpage

C

re

(pF)

0.6

0.5

0.4

0.3

0.2

0.1

0

0246810

IC= 0; f= 1 MHz.

V (V)

CB

Fig.4 Feedback capacitance as a function of

collector-base voltage.

MRC021

12

handbook, halfpage

f

T

(GHz)

10

8

6

4

2

0

1 10 100

f = 1 GHz; T

amb

=25°C.

V

CE

= 8 V

3 V

IC(mA)

Fig.5 Transition frequency as a function of

collector current.

MRC022

September 1995 4

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.

handbook, halfpage

20

G

UM

(dB)

18

= maximum available

max

MRC027

25

handbook, halfpage

gain
(dB)

20

15

MRC026

MSG

G

max

G

UM

16

14

12

10

0102030

VCE= 6 V; f = 900 MHz; T

amb

=25°C.

V

IC(mA)

Fig.6 Maximum unilateral power gain as a

function of collector current.

50

handbook, halfpage

gain
(dB)

40

G

UM

CE

= 6 V

3 V

MRC024

10

5

0

0 102030

VCE= 6 V; f = 2 GHz; T

amb

=25°C.

IC(mA)

Fig.7 Gain as a function of collector current.

50

handbook, halfpage

gain
(dB)

40

G

UM

MRC025

30

20

10

0

−2

10

IC= 5 mA; VCE= 6 V; T

MSG

10

amb

−1

=25°C.

G

max

110

f (GHz)

Fig.8 Gain as a function of frequency.

September 1995 5

30

20

10

0

−2

10

IC= 20 mA; VCE= 6 V; T

MSG

10

amb

−1

=25°C.

Fig.9 Gain as a function of frequency.

G

max

110

f (GHz)

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

handbook, halfpage

4

F

(dB)

3

f = 2 GHz

2

1

0

11010

VCE= 6 V; T

amb

=25°C.

900 MHz

500 MHz

I

(mA)

C

Fig.10 Minimum noise figure as a function of

collector current.

MRC029

2

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE= 6 V; T

amb

=25°C.

I = 20 mA

C

5 mA

110

f (GHz)

Fig.11 Minimum noise figure as a function of

frequency.

MRC023

September 1995 6

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

handbook, full pagewidth

IC= 5 mA; VCE= 6 V;
f = 900 MHz; Z

o

=50Ω.

pot. unst.
region

180°

stability
circle

135°

0

0.2

−135°

0.5

0.2

0.2 0.5 1 2 5

F = 3 dB

0.5

F = 1.5 dB

F = 2 dB

90°

−90°

1

F

min

1

Fig.12 Noise circle.

= 1. 1 dB

Γ

OPT

1.0

45°

2

5

5

2

−45°

MRC077

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 5 mA; VCE= 6 V;
f = 2 GHz; Z

=50Ω.

o

G

max

180°

= 9.1 dB

90°

1

135°

0

0.2

−135°

0.5

F = 3 dB

0.2

F

min

0.2 0.5 1 2 5

G = 8,5 dB

Γ

MS

G = 8 dB

G = 7 dB

0.5

Γ

F = 2 dB

= 1. 9 dB

OPT

F = 2.5 dB

1

−90°

Fig.13 Noise circle.

1.0

45°

2

5

5

2

−45°

MRC078

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 7

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

handbook, full pagewidth

IC= 20 mA; VCE= 6 V;

=50Ω.

Z

o

90°

1

180°

135°

0

0.2

−135°

0.5

0.2
3 GHz

0.2 0.5 1 2 5

0.5

1

−90°

2

40 MHz

2

45°

−45°

Fig.14 Common emitter input reflection coefficient (S11).

5

5

MRC066

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 20 mA; VCE= 6 V.

90°

135°

45°

40 MHz

−90°

3 GHz

0°

−45°

MRC067

180°

50 40 30 20 10

−135°

Fig.15 Common emitter forward transmission coefficient (S21).

September 1995 8

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

handbook, full pagewidth

IC= 20 mA; VCE= 6 V.

90°

135°

45°

3 GHz

180°

0.5 0.4 0.3 0.2 0.1

−135°

40 MHz

−45°

−90°

0°

MRC060

Fig.16 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 20 mA; VCE= 6 V;

=50Ω.

Z

o

90°

1

180°

135°

0

0.5

0.2

0.2 0.5 1 2 5

45°

2

5

40 MHz

3 GHz

0.2

−135°

0.5

2

1

−90°

5

−45°

Fig.17 Common emitter output reflection coefficient (S22).

MRC061

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 9

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.3

0.10

IEC JEDEC EIAJ

2.2

1.8

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

September 1995 10

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 11