Datasheet BFS505 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS505

NPN 9 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

FEATURES

• Low current consumption

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

PINNING

PIN DESCRIPTION

Code: N0
1 base
2 emitter
3 collector

handbook, 2 columns

3

excellent reliability

• SOT323 envelope.

12

Top view

MBC870

DESCRIPTION

NPN transistor in a plastic SOT323

Fig.1 SOT323.

envelope.
It is intended for low power amplifiers,

oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

f

T

G

UM

F noise figure I

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−18 mA
total power dissipation up to Ts= 147 °C; note 1 −−150 mW
DC current gain IC= 5 mA; VCE= 6 V; Tj=25°C 60 120 250
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain Ic= 5 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

= 1.25 mA; VCE=6 V;

c

f = 900 MHz; T

amb

=25°C

− 9 − GHz

− 17 − dB

− 1.2 1.7 dB

Note

is the temperature at the soldering point of the collector tab.

1. T

s

September 1995 2

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts= 147 °C; note 1 − 150 mW
storage temperature −65 150 °C
junction temperature − 175 °C

thermal resistance from junction to

up to Ts= 147 °C; note 1 190 K/W

soldering point

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 3

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

CHARACTERISTICS

T

=25°C, unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

S



21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 10 − dBm

collector cut-off current IE= 0; VCB=6 V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 0.4 − pF
collector capacitance IE=ie= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
feedback capacitance IC= 0; VCB= 0.5 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

IC= 5 mA; VCE= 6 V; f = 900 MHz;
T

=25°C

amb

I

= 5 mA; VCE= 6 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain IC= 5 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

output power at 1 dB gain
compression

= Γ

s

f = 900 MHz; T

= Γ

Γ

s

f = 900 MHz; T

Γ

= Γ

s

f = 2 GHz; T
Ic= 5 mA; VCE= 6 V; RL=50Ω;

f = 900 MHz; T

= 1.25 mA; VCE=6 V;

opt;IC

=25°C

amb

= 5 mA; VCE=6 V;

opt;IC

=25°C

amb

= 1.25 mA; VCE=6 V;

opt;IC

=25°C

amb

=25°C

amb

− 9 − GHz

− 17 − dB

− 10 − dB

13 14 − dB

− 1.2 1.7 dB

− 1.6 2.1 dB

− 1.9 − dB

− 4 − dBm

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

= 5 mA; VCE= 6 V; RL=50Ω; f = 900 MHz; T

C

--------------------------------------------------------------

10 log



1S

–



fp= 900 MHz; fq= 902 MHz; measured at f

2

S

21

2



1S

–



11

22

dB.=

2

=25°C;

amb

= 898 MHz and at f

(2p−q)

September 1995 4

(2p−q)

= 904 MHz.

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

200

handbook, halfpage

P

tot

(mW)

150

100

50

0

0 50 100 200

150

Fig.2 Power derating curve.

MRC020 - 1

o

Ts(

C)

200

handbook, halfpage

h

FE

150

100

50

0

−3

10

VCE= 6 V; Tj=25°C.

−2

10

−1

10

11010

MRC019

I

(mA)

C

Fig.3 DC current gain as a function of collector

current.

2

0.5

handbook, halfpage

C

re

(pF)

0.4

0.3

0.2

0.1

0

0246810

IC= 0; f= 1 MHz.

V (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

MRC011

CB

12

handbook, halfpage

f

T

(GHz)

10

8

6

4

2

0

−1

10

f = 1 GHz; T

amb

11010

=25°C.

= 8 V

V

CE

3 V

IC(mA)

Fig.5 Transition frequency as a function of

collector current.

MRC013

2

September 1995 5

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.

= maximum available

max

25

handbook, halfpage

gain
(dB)

20

G

UM

15

10

5

0

02468

VCE= 6 V; f = 900 MHz; T

MSG

amb

=25°C.

Fig.6 Gain as a function of collector current.

MRC016

IC(mA)

20

handbook, halfpage

gain
(dB)

15

10

5

0

02468

VCE= 6 V; f = 2 GHz; T

amb

=25°C.

Fig.7 Gain as a function of collector current.

MSG

G

G

max

MRC017

UM

IC(mA)

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

IC= 1.25 mA; VCE= 6 V; T

G

UM

MSG

−1

10

=25°C.

amb

110

MRC015

G

max

f (GHz)

Fig.8 Gain as a function of frequency.

September 1995 6

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

IC= 5 mA; VCE= 6 V; T

Fig.9 Gain as a function of frequency.

MSG

10

amb

G

UM

−1

=25°C.

MRC014

G

max

110

f (GHz)

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

handbook, halfpage

4

F

(dB)

3

2

1

0

10

VCE= 6 V; T

−1

f = 2 GHz

amb

900 MHz
500 MHz

=25°C.

110

I

(mA)

C

Fig.10 Minimum noise figure as a function of

collector current.

MRC018

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE= 6 V; T

amb

=25°C.

I = 5 mA

C

1.25 mA

110

f (GHz)

Fig.11 Minimum noise figure as a function of

frequency.

MRC012

September 1995 7

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

handbook, full pagewidth

IC= 1.25 mA; VCE= 6 V;
f = 900 MHz; Z

o

=50Ω.

stability
circle

180°

0

−135°

135°

0.2

0.2

pot. unst.
region

0.5

0.2

0.5

90°

1

2

F

= 1. 2 dB

min

Γ

0.5 1 5

1

−90°

2

F = 1.5 dB

F = 2 dB

F = 3 dB

OPT

2

Fig.12 Noise circle.

45°

−45°

5

5

MRC073

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 1.25 mA; VCE= 6 V;
f = 2 GHz; Z

=50Ω.

o

180°

90°

1

135°

0

−135°

0.5

0.2

0.2 0.5 1 5

0.2

0.5

F = 4 dB

1

−90°

Fig.13 Noise circle.

F = 3 dB

F = 2.5 dB

F

= 1.9 dB

min

Γ

OPT

2

1.0

45°

2

5

5

2

−45°

MRC074

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 8

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

handbook, full pagewidth

IC= 5 mA; VCE= 6 V;

=50Ω.

Z

o

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5
3 GHz

0.2

0.5

1

−90°

2

2

45°

40 MHz

−45°

Fig.14 Common emitter input reflection coefficient (S11).

5

5

MRC056

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 5 mA; VCE= 6 V.

90°

135°

180°

15 12 9 6 3

40 MHz

−135°

3 GHz

−90°

45°

0°

−45°

MRC057

Fig.15 Common emitter forward transmission coefficient (S21).

September 1995 9

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

handbook, full pagewidth

IC= 5 mA; VCE= 6 V.

90°

135°

180°

0.5 0.4 0.3 0.2 0.1

−135°

3 GHz

40 MHz

−90°

45°

0°

−45°

MRC058

Fig.16 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 5 mA; VCE= 6 V;

=50Ω.

Z

o

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5

0.2

0.5

1

−90°

3 GHz

45°

2

5

40 MHz

5

2

−45°

MRC059

Fig.17 Common emitter output reflection coefficient (S22).

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 10

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

September 1995 11

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 9 GHz wideband transistor BFS505

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 12