Datasheet BFS25A Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS25A

NPN 5 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

December 1997

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

FEATURES

• Low current consumption

• Low noise figure

• Gold metallization ensures

excellent reliability

• SOT323 envelope.

PINNING

PIN DESCRIPTION

Code: N6
1 base
2 emitter
3 collector

handbook, 2 columns

3

DESCRIPTION

NPN transistor in a plastic SOT323
envelope.

12

Top view

MBC870

It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to

Fig.1 SOT323.

2 GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

f

T

G

UM

F noise figure I

collector-base voltage open emitter −−8V
collector-emitter voltage open base −−5V
DC collector current −−6.5 mA
total power dissipation up to Ts= 170 °C; note 1 −−32 mW
DC current gain IC= 0.5 mA; VCE= 1 V; Tj=25°C 50 80 200
transition frequency IC= 1 mA; VCE= 1 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain Ic= 0.5 mA; VCE= 1 V; f = 1 GHz;

T

=25°C

amb

= 0.5 mA; VCE= 1 V; f = 1 GHz;

c

T

=25°C

amb

3.5 5 − GHz

− 13 − dB

− 1.8 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
DC collector current − 6.5 mA
total power dissipation up to Ts= 170 °C; note 1 − 32 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

1. T

is the temperature at the soldering point of the collector tab.

s

December 1997 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to
soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

=25°C, unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

re

f

T

G

UM

F noise figure Γ

collector cut-off current IE= 0; VCB=5 V −−50 nA
DC current gain IC= 0.5 mA; VCE= 1 V 50 80 200
feedback capacitance IC= 0; VCB= 1 V; f = 1 MHz − 0.3 0.45 pF
transition frequency IC= 1 mA; VCE= 1 V; f = 1 GHz;

T

amb

maximum unilateral power gain
(note 1)

IC= 0.5 mA; VCE= 1 V; f = 1 GHz;
T

amb
s

f = 1 GHz; T

Γ

s

f = 1 GHz; T

up to Ts= 170 °C; note 1 190 K/W

3.5 5 − GHz

=25°C

− 13 − dB

=25°C

= Γ

= Γ

= 0.5 mA; VCE=1 V;

opt;IC

=25°C

amb

= 1 mA; VCE=1 V;

opt;IC

=25°C

amb

− 1.8 − dB

− 2 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S

–



11

22

dB.=

2

December 1997 3

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

40

handbook, halfpage

P

tot

(mW)

30

20

10

0

0 50 100 200

150

Ts (oC)

Fig.2 Power derating curve.

MRC038 - 1

100

handbook, halfpage

h

FE

80

60

40

20

0

−3

10

VCE= 1 V; Tj=25°C.

−2

10

−1

10

MRC037

110

I

(mA)

C

Fig.3 DC current gain as a function of collector

current.

0.5

handbook, halfpage

C

re

(pF)

0.4

0.3

0.2

0.1

0

012345

IC= 0; f= 1 MHz.

V (V)

CB

Fig.4 Feedback capacitance as a function of

collector-base voltage.

MRC031

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

0 0.5 1 1.5 2 2.5

f = 1 GHz; T

amb

=25°C.

V

CE

Fig.5 Transition frequency as a function of

collector current.

MRC032

= 3 V

1 V

IC(mA)

December 1997 4

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.

25

handbook, halfpage

gain
(dB)

20

G

UM

= maximum available

max

MRC035

20

handbook, halfpage

G

UM

(dB)

16

12

MRC036

= 3 V

V

CE

1 V

15

MSG

10

5

0

0 0.5 1 1.5 2 2.5

VCE= 1 V; f = 500 MHz; T

amb

=25°C.

Fig.6 Gain as a function of collector current.

50

handbook, halfpage

gain
(dB)

40

G

UM

IC(mA)

MRC034

8

4

0

0 0.5 1 1.5 2 2.5

f = 1 GHz; T

amb

=25°C.

Fig.7 Maximum unilateral power gain as a

function of collector current.

50

handbook, halfpage

gain

(dB)

40

G

UM

IC(mA)

MRC033

30

20

10

0

0.01 0.1 1 10

IC= 0.5 mA; VCE= 1 V; T

amb

MSG

=25°C.

G

max

f (GHz)

Fig.8 Gain as a function of frequency.

December 1997 5

30

20

10

0

−2

10

IC= 1 mA; VCE= 1 V; T

MSG

10

amb

−1

=25°C.

Fig.9 Gain as a function of frequency.

G

max

110

f (GHz)

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE= 1 V; T

amb

=25°C.

f = 2 GHz

1 GHz
500 MHz

110

IC (mA)

Fig.10 Minimum noise figure as a function of

collector current.

MCD145

handbook, halfpage

4

F

(dB)

3

2

1

0

2

10

VCE= 1 V; T

amb

=25°C.

IC = 2 mA

1 mA

0.5 mA

3

10

f (MHz)

Fig.11 Minimum noise figure as a function of

frequency.

MCD146

4

10

handbook, full pagewidth

IC= 1 mA; VCE= 1 V;
f = 500 MHz; Zo=50Ω.

stability
circle

180°

pot. unst.
region

135°

0

−135°

0.5

0.2
MSG = 13.9 dB

0.2 0.5 2 5

12 dB

0.2

10 dB

0.5

90°

1

1

F = 6 dB

1

−90°

Fig.12 Noise circle.

F = 4 dB

2

Γ

OPT

F = 2.5 dB

2

45°

−45°

5

5

MRC075

F

0°

min

1.0

0.8

0.6

0.4

0.2

0

= 1.9 dB

1.0

December 1997 6

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

handbook, full pagewidth

IC= 1 mA; VCE= 1 V;
f = 1 GHz; Zo=50Ω.

stability
circle

180°

90°

1

135°

0

−135°

0.5

MSG = 11.1 dB

0.2

0.2 0.5 2 5
10 dB

0.2

8 dB

0.5

1

F = 6 dB

1

−90°

Fig.13 Noise circle.

F = 3 dB

F = 4 dB

1.0

F

0°

min

0.8

0.6

0.4

0.2

0

= 2 dB

1.0

45°

2

5

Γ

OPT

5

2

−45°

MRA076

handbook, full pagewidth

IC= 1 mA; VCE= 1 V;
f = 2 GHz; Zo=50Ω.

180°

G

= 7. 5 dB

max

135°

0

−135°

0.5

7 dB

0.2

0.2 0.5 2 5
5 dB

3 dB

0.2

0.5

90°

1

1

F = 4 dB

F = 6 dB

1

−90°

Fig.14 Noise circle.

F

min

Γ

F = 2.5 dB

2

= 2.4 dB

OPT

2

45°

−45°

5

5

MRC051

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

December 1997 7

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

handbook, full pagewidth

IC= 1 mA; VCE= 1 V;

=50Ω.

Z

o

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5

3 GHz

0.2

0.5

1

−90°

2

2

45°

40 MHz

−45°

Fig.15 Common emitter input reflection coefficient (S11).

5

5

MRA052

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 1 mA; VCE= 1 V.

90°

135°

180°

40 MHz

5 4 3 2 1

−135°

3 GHz

−90°

45°

0°

−45°

MRC053

Fig.16 Common emitter forward transmission coefficient (S21).

December 1997 8

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

handbook, full pagewidth

IC= 1 mA; VCE= 1 V.

90°

135°

180°

0.5 0.4 0.3 0.2

−135°

3 GHz

40 MHz

0.1

−90°

45°

0°

−45°

MRC054

Fig.17 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 1 mA; VCE= 1 V;

=50Ω.

Z

o

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5

0.2

0.5

1

−90°

3 GHz

45°

2

5

40 MHz

5

2

−45°

Fig.18 Common emitter output reflection coefficient (S22).

MRC055

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

December 1997 9

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

December 1997 10

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFS25A

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

December 1997 11