Datasheet BFS17W Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS17W

NPN 1 GHz wideband transistor

Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14

1995 Sep 04

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17W

APPLICATIONS

Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.

PINNING

PIN DESCRIPTION

1 base

handbook, 2 columns

3

2 emitter

DESCRIPTION

Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.

3 collector

Top view

Marking code: E1

12

MBC870

Fig.1 SOT323

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
f
C
C
T

CBO
CEO

C

tot

FE

T

c
re

j

collector-base voltage −−25 V
collector-emitter voltage −−15 V
DC collector current −−50 mA
total power dissipation up to Ts=118°C; note 1 −−300 mW
DC current gain IC= 2 mA; VCE= 1 V 25 90 −
transition frequency IC= 25 mA; VCE=5V − 1.6 − GHz
collector capacitance IE= 0; VCB= 10 V; f = 1 MHz − 0.8 1.5 pF
feedback capacitance IC= 1 mA; VCE=5V; f=1MHz − 0.75 − pF
junction temperature −−175 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CEO
EBO

C

tot
stg
j

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts=118°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

Note

1. Ts is the temperature at the soldering point of the collector pin.

1995 Sep 04 2

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17W

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C (unless otherwise specified).

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

F noise figure I

thermal resistance from junction to soldering point up to Ts=118°C; note 1 190 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=10V −−10 nA
DC current gain IC= 2 mA; VCE=1V 25 90 −
transition frequency IC= 25 mA; VCE=5V;

− 1.6 − GHz

f = 500 MHz

collector capacitance IE=ie= 0; VCB=10V;

− 0.8 1.5 pF

f=1MHz

emitter capacitance IC=ic= 0; VEB= 0.5 V;

− 2 − pF

f=1MHz

feedback capacitance IB=ib= 0; VCE=5V;

f = 1 MHz; T

= 2 mA; VCE=5V;

C

amb

=25°C

f = 500 MHz; ΓS= Γ

opt

− 0.75 − pF

− 4.5 − dB

150

MLB587

o

T ( C)

s

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

Fig.2 Power derating curve.

1995 Sep 04 3

60

handbook, halfpage

h

FE

40

20

0

−1

10

VCE=1V.

110

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

MBG237

2

10

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17W

handbook, halfpage

2



C

re

(pF)

1.5

1

0.5

0

0

IB=ib= 0; f = 1 MHz.

24

68

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MBG238

VCB (V)

VCE = 10 V

5 V

IC (mA)

MBG239

2

10

2.5

handbook, halfpage

f

T

(GHz)

2

1.5

10

1

1

T

=25°C; f = 500 MHz.

amb

10

Fig.5 Transition frequency as a function

of collector current; typical values.

20

handbook, halfpage

F



(dB)

15

10

5

0

10−310−210

VCE=10V.

−1

101

Fig.6 Minimum noise figure as function of

frequency; typical values.

2

10

f (MHz)

MBG240

3

10

1995 Sep 04 4

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17W

PACKAGE OUTLINE

1.00

handbook, full pagewidth

0.2

A

M

0.2

M

0.4

B

0.2

3

A

max

0.1

max

0.2

Dimensions in mm.

2.2

2.0

1

2

1.4

1.2

2.2

1.8

Fig.7 SOT323.

1.35

1.15

B

0.3

0.1

0.25

0.10

MBC871

1995 Sep 04 5

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17W

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Sep 04 6