Datasheet BFS17 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFS17

NPN 1 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

handbook, halfpage

3

• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.

12

Top view

MSB003

PINNING

PIN DESCRIPTION

1 base
2 emitter

Marking code: E1p.

Fig.1 SOT23.

3 collector

QUICK REFERENCED DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

f

T

F noise figure I

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
DC collector current − 25 mA
total power dissipation up to Ts=70°C; note 1 − 300 mW
transition frequency IC= 25 mA; VCE= 5 V; f = 500 MHz; Tj=25°C1 − GHz

= 2 mA; VCE=5V; RS=50Ω; f = 500 MHz;

C

4.5 − dB

Tj=25°C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
P
T
T

CBO
CEO
EBO

C
CM

tot
stg
j

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 25 mA
peak collector current − 50 mA
total power dissipation up to Ts=70°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

Note to the Quick reference data and the Limiting values

1. T

is the temperature at the soldering point of the collector pin.

s

September 1995 2

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

F noise figure I

thermal resistance from junction to soldering point up to Ts=70°C; note 1 260 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=10V −−10 nA
DC current gain IC= 2 mA; VCE=1V 25 90 −

I

= 25 mA; VCE=1V 25 90 −

C

transition frequency IC= 2 mA; VCE= 5 V; f = 500 MHz − 1 − GHz

I

= 25 mA; VCE= 5 V; f = 500 MHz − 1.6 − GHz

C

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.8 1.5 pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz −−2pF
feedback capacitance IC= 1 mA; VCE= 5 V; f = 1 MHz − 0.65 − pF

= 2 mA; VCE=5V; RS=50Ω;

C

− 4.5 − dB

f = 500 MHz

September 1995 3

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

100

handbook, halfpage

h

FE

50

0

0

VCE= 1V; Tj=25°C.

Fig.2 DC current gain as a function of

10 30

20

collector current.

IC (mA)

MEA395

2.0

handbook, halfpage

C

c

(pF)

1.6

1.2

0.8

0.4

0

0

IE=ie= 0; f = 1MHz; Tj=25°C.

10

20

Fig.3 Collector capacitance as a function of

collector-base voltage.

MEA396

VCB (V)

30

handbook, halfpage

2

f

T

(GHz)

1

0

0102030

VCE= 5 V; f =500 MHz; Tj=25°C.

MEA393

I

(mA)

C

Fig.4 Transition frequency as a function of

collector current.

September 1995 4

10

handbook, halfpage

F

(dB)

5

0

0

VCE= 5 V; RS=50Ω; f = 500 MHz; Tj=25°C.

1248

Fig.5 Minimum noise figure as a function of

collector current.

MEA397

16 20

IC (mA)

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

mm

A

1.1

0.9

OUTLINE
VERSION

SOT23

max.

September 1995 5

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 1 GHz wideband transistor BFS17

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 6