Datasheet BFR94A Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR94A

NPN 3.5 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

DESCRIPTION

NPN resistance-stabilized transistor
in a SOT122E capstan envelope.

It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to its high transition
frequency, it has a high power gain, in
conjunction with good wideband

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

fpage

4

C

1

3

properties, and low noise up to high
frequencies.

2

MBB904

It is primarily intended for CATV and
MATV applications.

The BFR94A is a replacement for the
BFR94. The SOT122E footprint is
similar to that of the SOT48, used for

Fig.1 SOT122E.

the BFR94.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
P
f

CBO
CEO

C

tot

T

collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
DC collector current − 150 mA
total power dissipation up to Tc= 145 °C; f > 1 MHz − 3.5 W
transition frequency Ic= 90 mA; VCE= 20 V; f = 500 MHz;

3.5 − GHz

Tj=25°C

F noise figure I

d

im

d

2

intermodulation distortion Ic= 90 mA; VCE= 20 V;

second order intermodulation
distortion

= 90 mA; VCE= 20 V; f = 200 MHz;

c

=25°C

T

amb

Vo= 60 dBmV; f

= 194.25 MHz

(p+q−r)

Ic= 90 mA; VCE= 20 V;
Vo= 48 dBmV; fp+ fq= 210 MHz

810dB

−63 − dB

−−56 dB

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 2

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CER

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL RESISTANCE

collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 25 V
collector-emitter voltage RBE= 100 Ω−35 V
emitter-base voltage open collector − 3V
DC collector current − 150 mA
peak collector current f > 1 MHz − 300 mA
total power dissipation up to Tc= 145 °C; f > 1 MHz − 3.5 W
storage temperature −65 200 °C
junction temperature − 200 °C

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-c

thermal resistance from junction to case 15 K/W

September 1995 3

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

C

cs

G

UM

F noise figure I

d

im

d

2

V

o

collector cut-off current IE= 0; VCB= 20 V −−50 µA
DC current gain IC= 50 mA; VCE= 20 V 30 −−

I

= 150 mA; VCE= 20 V 30 −−

C

transition frequency IC= 90 mA; VCE= 20 V; f = 500 MHz − 3.5 − GHz

I

= 150 mA; VCE= 20 V;

C

− 3.5 − GHz

f = 500 MHz
collector capacitance IE=ie= 0; VCB= 20 V; f = 1 MHz − 3.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 12 − pF
feedback capacitance IC= 10 mA; VCE= 20 V; f = 1 MHz − 1.3 − pF
collector-stud capacitance f = 1 MHz − 2 − pF
maximum unilateral power gain

(note 1)

IC= 90 mA; VCE= 20 V;

f = 500 MHz; T

= 90 mA; VCE= 20 V;

C

f = 200 MHz; T

I

= 90 mA; VCE= 20 V;

C

f = 500 MHz; T

amb

amb

amb

=25°C

=25°C

=25°C

− 13.5 − dB

− 810dB

− 5 − dB

intermodulation distortion note 2 −−63 − dB
second order intermodulation

note 3 −−−56 dB
distortion

output voltage see Fig.2 and note 4 − 700 − mV

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

= 90 mA; VCE= 20 V; RL=75Ω;

C

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



–

1S



11

22

dB.=

2

Vp=Vo= 60 dBmV at fp= 196.25 MHz;
Vq=Vo−6 dB at fq= 203.25 MHz;
Vr=Vo−6 dB at fr= 205.25 MHz;
measured at f

) = 194.25 MHz.

(p+q−r

3. IC= 90 mA; VCE= 20 V;
fp= 66 MHz; fq= 144 MHz; fp+ fq= 210 MHz; Vo= 48 dBmV.

4. dim= −60 dB (DIN 45004B); Ic= 90 mA; VCE= 20 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 495.25 MHz;
Vq=Vo−6 dB; fq= 503.25 MHz;
Vr=Vo−6 dB; fr= 505.25 MHz;
measured at f

= 493.25 MHz.

(p+q−r)

amb

=25°C;

September 1995 4

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

handbook, halfpage

75 Ω

L1=L2=5µH Ferroxcube choke, catalogue
number 3122 108 20153.

2.2 nF

V

BB

1.5 kΩ

L1

10 nF

240 Ω

1 nF

19 Ω

2.2 nF

L2

10 nF

DUT

MEA497

Fig.2 Intermodulation distortion MATV test circuit.

V

CC

75 Ω

handbook, halfpage

4

f

T

(GHz)

3

2

1

0

VCE= 20 V; f= 500 MHz; Tj=25°C.

1010

2

I (mA)

C

Fig.3 Transition frequency as a function of

collector current.

MEA496

3

10

30

handbook, halfpage

d

im

(dB)

40

50

60

70

80

0 150

Measured in CATV test circuit.
VCE= 20 V; Vo= 60 dBmV;

= 194. 25 MHz.

f

(p+q−r)

50 100

MEA495

I (mA)

C

Fig.4 Intermodulation distortion as a function of

collector current.

30

handbook, halfpage

d

2

(dB)

40

50

60

70

80

0 150

Measured in CATV test circuit.
VCE= 20 V; Vo= 48 dBmV; f = 210 MHz.

50 100

MEA494

I (mA)

C

Fig.5 Second order intermodulation distortion as

a function of collector current.

September 1995 5

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

handbook, full pagewidth

IC= 90 mA; VCE= 20 V; T
Zo=50Ω.

amb

1

0.5

0.2

+ j

0

– j

0.2

0.5

=25°C.

1000 MHz

800

10.2 10520.5

500

200

100

1

Fig.6 Common emitter input reflection coefficient (S11).

2

5

10

∞

10

5

2

MEA498

handbook, full pagewidth

IC= 90 mA; VCE= 20 V; T

90°

60°

60°

amb

180°

=25°C.

150°

150°

120°

100 MHz

200

500

90°

800

1000

20

10

120°

Fig.7 Common emitter forward transmission coefficient (S21).

30°

+ ϕ

0°

− ϕ

30°

MEA900

September 1995 6

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

handbook, full pagewidth

IC= 90 mA; VCE= 20 V; T

90°

800

60°

1000 MHz

60°

amb

180°

=25°C.

150°

150°

120°

500

200

0.20.3

120°

0.1

100

90°

Fig.8 Common emitter reverse transmission coefficient (S12).

30°

+ ϕ

0°

− ϕ

30°

MEA901

handbook, full pagewidth

IC= 90 mA; VCE= 20 V; T
Zo=50Ω.

amb

1

0.5

0.2

+ j

0

– j

500

0.2

0.5

=25°C.

1000

10.2 10520.5

200

1

100 MHz

Fig.9 Common emitter output reflection coefficient (S22).

2

5

10

∞

10

5

2

MEA499

September 1995 7

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122E

D

A

Q

N

1

N

2

N

N

3

L

H

1

D

1

D

2

H

b

2

b

4

C

ceramic
BeO

metal

A

X

c

w

A

M

1

M

M

1

detail X

W

α

3

b

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

D

UNIT A

5.97

mm

4.80

OUTLINE

VERSION

SOT122E

1.05

0.73

b1b

10.75

10.43

cM

2

14.25

0.18

13.94

0.14

IEC JEDEC EIAJ

Db

7.50

7.23

D

1

6.46

7.19

6.25

6.93

REFERENCES

H

27.56

25.78

L

6.84

5.30

2

September 1995 8

3.18

2.92

M

1.63

1.42

N

1

N

1

11.82

11.04

N

N3Q

max.

1.02 0.381

2

8.89

3.68

7.36

2.92

EUROPEAN

PROJECTION

3.38

2.79

W

w

8-32
UNC

ISSUE DATE

97-04-18

α

1

90°

Philips Semiconductors Product specification

NPN 3.5 GHz wideband transistor BFR94A

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 9