Page 1
NPN Silicon RF Transistor
Preliminary data
BFR949T
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR949T RKs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter Symbol Value Unit
2
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
75°C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
C
B
P
R
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
10 V
20
20
1.5
35 mA
4
250 mW
150 °C
-65 ... 150
-65 ... 150
300
K/W
Aug-09-20011
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Electrical Characteristics at TA = 25°C, unless otherwise specified
BFR949T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Base-emitter forward voltage
I
= 25mA
E
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 6 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
BEF
I
CBO
I
EBO
h
FE
10 - - V
- - 1.05
- - 100 nA
- - 0.1 µA
100 140 200 -
Aug-09-20012
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BFR949T
A
Electrical Characteristics at T
= 25°C, unless otherwise specified.
Parameter
AC characteristics (verified by random sampling)
Transition frequency
I
= 15 mA, VCE = 6 V, f = 1 GHz
C
Collector-base capacitance
V
= 10 V, f = 1MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1MHz
EB
Noise figure
I
= 5 mA, VCE = 6 V, ZS = Z
C
Sopt
,
f = 1 GHz
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
7 9 - GHz
- 0.33 0.4 pF
- 0.2 -
- 0.6 -
-
1
2.5
dB
= 3 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 1.8 GHz
Power gain, maximum stable 1)
I
= 10 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 900 MHz
Power gain, maximum available 2)
I
= 10 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 1.8 GHz
Transducer gain
I
= 15 mA, VCE = 6 V, ZS = ZL = 50 ,
C
f = 1 GHz
= 10 mA, VCE = 8 V, ZS = ZL = 50 ,
I
C
f = 1.8 GHz
1
Gms = |S21 / S12|
2
Gma = |S21 / S12| (k-(k2-1)
1/2
)
Lopt
Lopt
,
,
G
G
|S
ms
ma
21e
-
1.5
-
- 20 -
- 14 -
2
|
13
-
16
11
-
-
Aug-09-20013
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SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFR949T
IS = 4.36 fA
VAF = 30 V
NE = 1.998
-
VAR = 41.889 V
NC = 1.569
RBM = 0.823
-
CJE = 291 fF
TF = 8.77 ps
ITF = 1.336 mA
VJC = 1.048 V
TR = 1.39 ns
MJS = 0
-
. -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
BF = 120
IKF = 0.152 A
BR = 33.322
IKR = 0.063 A
RB = 20.766
RE = 0.101
VJE = 0.586 V
XTF = 0.00894
PTF = 0 deg
MJC = 0.334
CJS = 0fF
NK = 0.5
FC = 0.924
-
-
-
-
-
-
NF = 1.085
-
ISE = 1.86 pA
NR = 1.095
-
ISC = 3.68 pA
IRB = 72.2 µA
RC = 0.849
MJE = 0.456
-
VTF = 0.198 V
CJC = 459 fF
XCJC = 0.217
-
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
Package Equivalent Circuit:
C
4
C
1
L
B
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
2
C
6
B’
C
Transistor
Chip
E’
2
E
C’
C
3
L
1
L
3
C
5
EHA07524
L1 = 0.762 nH
L
= 0.706 nH
2
= 0.382 nH
L
3
= 62 fF
C
1
C
= 84 fF
C
2
= 180 fF
C
3
= 7
C
4
=
C
5
=
C
6
Valid up to 6GHz
40 fF
48 fF
fF
Aug-09-20014
Page 5
BFR949T
Total power dissipation P
300
mW
200
tot
P
150
100
50
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
3
10
thJS
R
2
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
thJS
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
/ P
totmax
P
1
10
= f (tp)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
Aug-09-20015
Page 6
BFR949T
Collector-base capacitance C
f = 1MHz
0.6
pF
0.4
cb
C
0.3
0.2
0.1
= f (VCB)
cb
Transition frequency f
V
= Parameter
CE
10
GHz
T
f
6
4
2
= f (IC)
T
10V
8V
5V
3V
2V
1V
0.7V
0
0 5 10 15
Power Gain G
f = 0.9GHz
= Parameter
V
CE
22
dB
16
G
13
10
, Gms = f(IC)
ma
10V
8V
V
25
V
CB
0
0 5 10 15 20 25 30 35
Power Gain G
, Gms = f(IC)
ma
mA
45
I
C
f = 1.8GHz
= Parameter
V
CE
5V
3V
2V
1V
16
dB
G
8
4
10V
8V
5V
3V
2V
1V
0.7V
7
0 5 10 15 20 25 30 35
0.7V
mA
45
I
C
0
0 5 10 15 20 25 30 35
mA
45
I
C
Aug-09-20016
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BFR949T
Power Gain G
, Gms = f(VCE):_____
ma
|S21|2 = f(VCE):--------f = Parameter
25
IC=10mA
0.9GHz
dB
0.9GHz
1.8GHz
15
G
1.8GHz
10
5
0
0 3 6
Power Gain G
V
= Parameter
CE
45
I
=10mA
C
dB
35
30
G
25
20
15
10
5
0
0 1 2 3 4 5
, Gms = f(f)
ma
V
12
V
CE
Power Gain |S
|2= f(f)
21
V
= Parameter
CE
30
I
=10mA
C
dB
2
|
20
21
|S
15
10
10V
GHz
5V
1V
7
f
5
0
0 1 2 3 4 5
10V
GHz
5V
1V
7
f
Aug-09-20017
Page 8
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