Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
BFR93/BFR93R
Vishay Telefunken
1
94 9280
23
BFR93 Marking: R1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
BFR93R Marking: R4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
23
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 581
20 V
12 V
2 V
40 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85034
Rev. 3, 20-Jan-99
3
R
thJA
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450 K/W
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Page 2
BFR93/BFR93R
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 4 mA, ZS = 50 W,
f = 500 MHz
Power gain VCE = 5 V, IC = 30 mA, ZL = Z
f = 500 MHz
VCE = 5 V, IC = 30 mA, ZL = Z
f = 800 MHz
Linear output voltage – two
tone intermodulation test
VCE = 5 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
Third order intercept point VCE = 5 V, IC = 30 mA, f = 800 MHz IP
Lopt
Lopt
,
,
G
G
V1 = V
CES
CBO
EBO
(BR)CEO
FE
T
cb
ce
eb
12 V
25 50 150
0.5 pF
0.15 pF
1.1 pF
100mA
100 nA
10
5 GHz
F 1.9 dB
pe
pe
2
3
18 dB
13 dB
240 mV
30 dBm
m
A
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Document Number 85034
Rev. 3, 20-Jan-99
Page 3
Common Emitter S–Parameters
5
BFR93/BFR93R
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
= 25_C, unless otherwise specified
amb
5 1000 0.293 179.5 2.71 73.8 0.123 61.2 0.460 –25.5
1200 0.299 167.4 2.33 67.0 0.143 61.8 0.457 –28.5
1500 0.328 152.7 1.93 57.7 0.173 62.0 0.442 –34.0
1800 0.360 138.0 1.67 49.8 0.204 61.5 0.430 –38.4
2000 0.381 130.1 1.54 45.1 0.227 60.6 0.427 –42.5
10 1000 0.258 167.3 3.02 71.6 0.130 66.8 0.400 –22.2
1200 0.265 157.5 2.58 65.5 0.152 66.0 0.400 –25.6
1500 0.296 146.7 2.13 57.0 0.186 64.3 0.387 –31.3
1800 0.327 133.7 1.84 49.5 0.220 62.3 0.374 –35.9
2000 0.350 126.2 1.70 44.8 0.243 60.5 0.371 –40.1
20 1000 0.241 158.9 3.15 69.8 0.134 69.3 0.368 –19.5
1200 0.252 152.0 2.69 63.9 0.158 67.7 0.369 –23.5
1500 0.286 143.2 2.22 55.8 0.193 65.0 0.355 –29.6
1800 0.317 130.9 1.90 48.5 0.228 62.4 0.343 –34.1
2000 0.342 123.6 1.75 44.0 0.252 60.2 0.340 –38.5
30 1000 0.247 156.3 3.14 68.7 0.136 70.1 0.360 –18.2
1200 0.255 150.3 2.67 63.0 0.160 68.2 0.362 –22.5
1500 0.292 141.9 2.20 55.1 0.195 65.5 0.347 –28.6
1800 0.325 130.3 1.89 47.9 0.230 62.5 0.337 –33.5
2000 0.349 123.6 1.74 43.1 0.254 60.3 0.333 –38.0
S11 S21 S12 S22
LIN
MAG
100 0.731 –41.1 12.40 148.2 0.031 70.1 0.891 –17.4
300 0.474 –98.0 7.54 112.4 0.061 55.9 0.618 –28.8
500 0.358 –132.7 5.00 95.7 0.078 55.9 0.504 –27.6
800 0.301 –166.0 3.30 81.1 0.104 59.6 0.458 –24.5
100 0.572 –56.5 18.26 137.6 0.026 68.0 0.796 –23.6
300 0.344 –117.2 9.02 103.8 0.051 62.0 0.499 –29.7
500 0.286 –151.4 5.72 90.4 0.073 64.7 0.413 –25.5
800 0.259 178.7 3.69 78.1 0.106 66.7 0.392 –21.2
100 0.423 –73.5 22.83 127.4 0.022 67.3 0.688 –28.0
300 0.272 –134.6 9.73 98.0 0.047 68.3 0.422 –28.1
500 0.250 –165.9 6.04 86.8 0.072 70.5 0.361 –22.3
800 0.245 168.7 3.88 75.9 0.109 70.4 0.356 –17.9
100 0.357 –84.4 24.36 122.1 0.021 68.1 0.629 –29.4
300 0.254 –144.3 9.78 95.5 0.046 71.2 0.393 –26.0
500 0.248 –171.9 6.04 85.2 0.072 72.6 0.346 –20.0
800 0.245 164.9 3.86 74.7 0.110 71.5 0.347 –16.1
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85034
Rev. 3, 20-Jan-99
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Page 4
BFR93/BFR93R
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
6000
5000
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
0 8 16 24 32 40
IC – Collector Current ( mA )13588
VCE=5V
f=500MHz
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13589
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.5
3.0
2.5
2.0
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0 5 10 15 20 25 30
IC – Collector Current ( mA )12894
f=1MHz
VCE=5V
f=500MHz
Z
=50
W
S
Figure 2. Transition Frequency vs. Collector Current
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Figure 4. Noise Figure vs. Collector Current
Document Number 85034
Rev. 3, 20-Jan-99
Page 5
BFR93/BFR93R
2.0 GH
Vishay Telefunken
VCE = 5 V, IC = 30 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
0
–j0.2
13 530
0.2
–j0.5
2.0 GHz
1.0
0.5
0.3
1
0.1
–j
Figure 5. Input reflection coefficient
j2
2
5
–j2
–j5
W
j5
S
12
90°
120°
150°
1
180°
–150°
–120° –60°
13 531
0.1
1.5
1.0
0.5
0.08 0.16
–90°
z
60°
30°
0°
–30°
Figure 7. Reverse transmission coefficient
S
22
0.1
150°
180°
–150°
–120° –60°
13 532
90°
0.3
0.5
2.0 GHz
–90°
8 16
Figure 6. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 533
–j0.5
0.2
0.5
1
2.0 GHz
–j
0.8
0.1
–j2
j2
j5
5
1
–j5
Figure 8. Output reflection coefficient
Document Number 85034
Rev. 3, 20-Jan-99
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Page 6
BFR93/BFR93R
Vishay Telefunken
Dimensions of BFR93 in mm
95 11346
Dimensions of BFR93R in mm
95 11347
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Document Number 85034
Rev. 3, 20-Jan-99
Page 7
BFR93/BFR93R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85034
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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