Page 1
BFR93A/BFR93AR/BFR93AW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Features
D
High power gain
D
High transition frequency
D
Low noise figure
Vishay Telefunken
1
94 9280
23
BFR93A Marking: +R2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
13 652
2
BFR93AW Marking: WR2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
13 581
13 570
1
9510527
23
BFR93AR Marking: +R5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
Document Number 85035
Rev. 3, 20-Jan-99
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1 (9)
Page 2
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
20 V
12 V
2 V
50 mA
200 mW
150
–65 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 5 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 5 mA
VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 25 mA
Power gain VCE = 8 V, IC = 25 mA, ZS = 50 W,
Linear output voltage – two
tone intermodulation test
ZL = Z
VCE = 8 V, IC = 25 mA, dIM = 60 dB,
f
= 806 MHz, f2 = 810 MHz,
1
ZS = ZL = 50
, f = 800 MHz
Lopt
W
Third order intercept point VCE = 8 V, IC = 25 mA, f = 800 MHz IP
F 1.6 dB
F 2.1 dB
G
V1 = V
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
pe
2
3
100mA
100 nA
10
m
12 V
0.1 0.4 V
40 90 150
6 GHz
0.45 pF
0.2 pF
1.5 pF
14 dB
260 mV
31 dBm
A
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Document Number 85035
Rev. 3, 20-Jan-99
Page 3
Common Emitter S–Parameters
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
8 10 1000 0.189 –178.0 3.48 75.4 0.124 67.2 0.423 –21.1
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.811 –33.9 12.66 152.2 0.028 72.8 0.914 –15.0
300 0.530 –83.4 8.32 117.3 0.058 57.8 0.661 –27.4
500 0.370 –116.3 5.67 99.8 0.075 56.7 0.537 –26.9
800 0.274 –149.7 3.77 85.0 0.099 59.8 0.487 –23.8
5 1000 0.256 –165.5 3.11 77.8 0.117 61.8 0.485 –24.2
1200 0.255 –178.6 2.67 71.1 0.135 62.6 0.481 –26.8
1500 0.277 162.7 2.21 62.1 0.163 63.3 0.466 –31.3
1800 0.294 146.0 1.91 54.0 0.194 63.3 0.455 –35.0
2000 0.312 136.2 1.76 49.4 0.215 62.7 0.454 –38.4
100 0.676 –44.9 19.22 142.3 0.025 69.9 0.832 –21.0
300 0.377 –97.1 10.24 108.0 0.050 62.8 0.539 –29.0
500 0.259 –131.0 6.59 93.8 0.071 64.8 0.441 –25.0
800 0.197 –164.2 4.26 81.6 0.102 66.9 0.415 –20.4
1200 0.195 169.8 2.98 69.5 0.147 66.7 0.424 –24.2
1500 0.222 155.6 2.46 61.4 0.179 65.4 0.409 –29.0
1800 0.245 140.0 2.12 54.1 0.212 63.6 0.398 –32.6
2000 0.263 131.3 1.95 49.9 0.235 62.0 0.397 –36.2
100 0.597 –52.0 22.81 136.3 0.023 69.3 0.774 –23.9
300 0.306 –105.2 10.94 103.8 0.047 66.5 0.484 –28.5
500 0.219 –139.3 6.91 91.3 0.070 68.4 0.405 –23.3
800 0.172 –172.8 4.45 80.0 0.104 69.5 0.390 –18.3
15 1000 0.165 174.6 3.62 74.3 0.128 69.0 0.401 –19.4
1200 0.174 164.9 3.09 68.8 0.151 68.1 0.403 –22.7
1500 0.201 152.9 2.54 61.0 0.185 66.0 0.388 –27.8
1800 0.226 137.5 2.19 53.9 0.219 63.8 0.377 –31.4
2000 0.245 128.5 2.01 49.7 0.243 61.8 0.375 –35.3
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85035
Rev. 3, 20-Jan-99
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Page 4
BFR93A/BFR93AR/BFR93AW
8
Vishay Telefunken
S1 1 S21 S12 S22
VCE/V IC/mA f/MHz
100 0.540 –56.8 24.86 132.3 0.022 68.6 0.732 –25.5
300 0.274 –110.3 11.22 101.5 0.046 68.6 0.455 –27.6
500 0.199 –144.7 7.03 89.8 0.070 70.5 0.387 –21.9
800 0.164 –177.3 4.49 79.2 0.105 70.9 0.380 –16.9
20 1000 0.160 171.1 3.66 73.5 0.130 70.1 0.391 –18.2
1200 0.166 162.3 3.13 68.2 0.153 68.6 0.393 –21.8
1500 0.197 151.6 2.58 60.5 0.188 66.2 0.378 –27.1
1800 0.223 135.8 2.21 53.7 0.222 63.8 0.367 –30.9
2000 0.242 128.2 2.04 49.5 0.246 61.8 0.365 –34.7
100 0.502 –61.1 26.06 129.3 0.021 68.7 0.702 –26.4
300 0.254 –114.6 11.32 99.8 0.045 69.6 0.438 –26.5
500 0.191 –148.9 7.05 88.8 0.070 71.5 0.378 –20.6
800 0.162 178.0 4.51 78.5 0.106 71.5 0.374 –16.0
25 1000 0.158 167.6 3.66 73.0 0.131 70.5 0.387 –17.5
1200 0.163 159.3 3.13 67.6 0.154 69.0 0.389 –21.2
1500 0.200 149.0 2.57 60.1 0.190 66.4 0.374 –26.6
1800 0.220 134.7 2.21 53.2 0.224 63.8 0.364 –30.5
2000 0.243 128.4 2.04 48.9 0.248 61.7 0.361 –34.4
LIN
MAG
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
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Document Number 85035
Rev. 3, 20-Jan-99
Page 5
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
7000
6000
5000
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13591
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.5
3.0
2.5
f=1MHz
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
0 8 16 24 32 40
IC – Collector Current ( mA )13590
VCE=5V
f=500MHz
Figure 2. Transition Frequency vs. Collector Current
2.0
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0 5 10 15 20 25 30
IC – Collector Current ( mA )12897
VCE=8V
f=800MHz
Z
=50
W
S
Figure 4. Noise Figure vs. Collector Current
Document Number 85035
Rev. 3, 20-Jan-99
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Page 6
BFR93A/BFR93AR/BFR93AW
ÁÁ
Vishay Telefunken
VCE = 8 V, IC = 25 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
2.0 GHz
0
–j0.2
13 534
0.2
–j0.5
1.0
1
0.3
–j
Figure 5. Input reflection coefficient
0.1
j2
2
5
–j2
–j5
W
j5
S
12
90°
120°
150°
1
180°
–150°
–120° –60°
13 535
1.0
0.5
0.1
–90°
2.0 GHz
60°
1.5
0.08 0.16
30°
0°
–30°
Figure 7. Reverse transmission coefficient
S
22
90°
120°
150°
0.1
0.3
180°
–150°
13 536
2.0 GHz
–120° –60°
–90°
20 40
Figure 6. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 537
–j0.5
0.2
0.5
1
2.0 GHz
–j
0.8
–j2
j2
5
0.1
j5
1
–j5
Figure 8. Output reflection coefficient
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Document Number 85035
Rev. 3, 20-Jan-99
Page 7
Dimensions of BFR93A in mm
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
95 11346
Dimensions of BFR93AR in mm
95 11347
Document Number 85035
Rev. 3, 20-Jan-99
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Page 8
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Dimensions of BFR93AW in mm
96 12236
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Document Number 85035
Rev. 3, 20-Jan-99
Page 9
BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85035
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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