Datasheet BFR93A Datasheet (Infineon)

NPN Silicon RF Transistor

BFR 93A



For low-noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

1

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR 93A R2s 1 = B 2 = E 3 = C SOT-23

Maximum Ratings

3

Parameter

Symbol UnitValue

2

VPS05161

Collector-emitter voltage 12V

Collector-emitter voltage V

Collector-base voltage 20V

Emitter-base voltage

Collector current I

Base current I

Total power dissipation, TS  63 °C

1)

Junction temperature T

Ambient temperature T

Storage temperature T

Thermal Resistance

Junction - soldering point

C

B

P

R

CEO

CES

CBO

EBO

tot

j

A

stg

thJS

20

2V

50 mA

6

300 mW

150 °C

-65 ... 150



290

V

K/W

1

T

is measured on the collector lead at the soldering point to the pcb

S

Oct-13-19991

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BFR 93A

Parameter

DC characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

Collector-emitter cutoff current

V

= 20 V, VBE = 0

CE

Collector-base cutoff current

V

= 10 V, IE = 0

CB

Emitter-base cutoff current

= 2 V, IC = 0

V

EB

DC current gain

= 30 mA, VCE = 8 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

12 - - V

- - 100 µA

- - 100 nA

- - 10 µA

50 100 200 -

Oct-13-19992

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BFR 93A

Parameter

AC characteristics (verified by random sampling)

Transition frequency

= 30 mA, VCE = 8 V, f = 500 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Collector-emitter capacitance

= 10 V, f = 1 MHz

V

CE

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Noise figure

= 5 mA, VCE = 8 V, ZS = Z

I

C

Sopt

,

f = 900 MHz

f = 1.8 GHz

Symbol Values Unit

min. typ. max.

f

C

F

T

cb

ce

eb

4.5 6 - GHz

- 0.58 0.9 pF

- 0.23 -

- 1.7 -

-

2

3.3

dB

-

Power gain, maximum available 1)

= 30 mA, VCE = 8 V, ZS = Z

I

C

Sopt

, ZL = Z

f = 900 MHz

f = 1.8 GHz

Transducer gain

= 30 mA, VCE = 8 V, ZS = ZL = 50 ,

I

C

f = 900 MHz

f = 1.8 GHz

Lopt

,

G

|S

ma

21e

-

2

|

-

13.5

8.5

12

6.5

-

1

G

= |S21 / S12| (k-(k2-1)

ma

1/2

)

Oct-13-19993

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

BFR 93A

IS = 8.6752 fA

VAF = 20.011 V

NE = 1.5466 -

VAR = 26.834 V

NC = 1.95 -

RBM = 3.4649



CJE = 3.1538 fF

TF = 33.388 ps

ITF = 2.5184 mA

VJC = 0.72744 V

TR = 1.1061 ns

MJS = 0-

XTI = 3 -

All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST)



1996 SIEMENS AG

BF = 137.63 -

IKF = 0.33395 A

BR = 59 -

IKR = 0.015129 A

RB = 7.2326



RE = 1.0075

VJE = 0.70393 V

XTF = 0.28319 -

PTF = 0 deg

MJC = 0.34565 -

CJS = 0fF

XTB = 0-

FC = 0.75935 -

NF = 0.93633 -

ISE = 2619.3 fA

NR = 0.88761 -

ISC = 0.70823 fA

IRB = 0.043806 mA

RC = 0.13193



MJE = 0.5071 -

VTF = 0.17765 V

CJC = 1039.5 fF

XCJC = 0.21422 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

Package Equivalent Circuit:

LBI =

=

L

BO

L

=

EI

L

=

EO

=

L

CI

=

L

CO

C

=

BE

=

C

CB

=

C

CE

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm

0.85 nH

0.51 nH

0.69 nH

0.61 nH

0nH

0.49 nH

73 fF

84 fF

165 fF

Oct-13-19994

BFR 93A

Total power dissipation P

* Package mounted on epoxy

400

mW

300

tot

250

P

200

150

100

50

0

0 20 40 60 80 100 120

T

A

= f (TA*, TS)

tot

T

S

°C

TA,T

150

S

Permissible Pulse Load R

3

10

K/W

2

10

thJS

R

1

10

0

10

-7

-6

-5

10

-4

10

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005 D = 0

-3

= f (tp)

-2

10

s

tp

10

Permissible Pulse Load

P

totmax/PtotDC

2

10

totDC

-

/ P

totmax

P

1

10

0

10

-7

10

= f (tp)

-6

-5

10

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

-4

-3

10

-2

s

10

0

tp

Oct-13-19995

BFR 93A

Collector-base capacitance Ccb = f (VCB)

f = 1MHz

1.5

pF

1.2

1.1

1.0

cb

C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0 0 4 8 12 16

V

VCB

22

Transition frequency fT = f (IC)

VCE = Parameter

6.0

GHz

5.0

4.5

4.0

T

f

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0 0 10 20 30 40

10V

mA

2V

1V

0.7V

60

IC

Power Gain Gma, Gms = f(IC)

f = 0.9GHz

= Parameter

V

CE

14

dB

G

10

8

6

4

0 10 20 30 40

10V

mA

5V

3V

2V

1V

0.7V

IC

60

Power Gain Gma, Gms = f(IC)

f = 1.8GHz

= Parameter

V

CE

9

dB

7

6

G

5

4

3

2

1

0 10 20 30 40

10V

mA

5V

3V

2V

1V

0.7V

60

IC

Oct-13-19996

BFR 93A

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

16

IC=30mA

dB

12

G

10

8

6

4

2

0 2 4 6 8

0.9GHz

1.8GHz

V

VCE

12

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50)

= Parameter, f = 900MHz

V

CE

32

dBm

28

26

3

24

IP

22

20

18

16

14

12

10

0 10 20 30 40

8V

1V

mA

5V

3V

2V

60

IC

Power Gain Gma, Gms = f(f)

V

= Parameter

CE

32

IC=30mA

dB

24

20

G

16

12

8

4

0

0.0 0.5 1.0 1.5 2.0 2.5

GHz

10V

1V

0.7V

3.5

Power Gain |S21|2= f(f)

VCE = Parameter

30

IC=30mA

dB

22

21

18

S

14

10

6

2

-2

0.0 0.5 1.0 1.5 2.0 2.5

GHz

10V 1V

0.7V

3.5

f

Oct-13-19997

Datasheet BFR93A Datasheet (Infineon) [ru]