Datasheet BFR93 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR93

NPN 5 GHz wideband transistor

Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14

1997 Oct 29

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

FEATURES

• Very low intermodulation distortion

• High power gain

• Excellent wideband properties and

DESCRIPTION

NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.

page

3

low noise up to high frequencies
due to its very high transition
frequency.

APPLICATIONS

• RF wideband amplifiers and
oscillators.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

12

Top view

Marking code: R1p.

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
P
C
f

CBO
CEO

C

tot

re

T

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C − 300 mW
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz 0.8 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz;

5 − GHz

Tj=25°C

G

UM

F noise figure I

d

im

maximum unilateral power gain IC= 30 mA; VCE= 5 V; f = 500 MHz;

T

=25°C

amb

= 2 mA; VCE= 5 V; f = 500 MHz;

C

T

=25°C

amb

intermodulation distortion IC= 30 mA; VCE=5V; RL=75Ω;

16.5 − dB

1.9 − dB

−60 − dB
VO= 300 mV; fp+fq−fr= 493.25 MHz;
T

=25°C

amb

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1997 Oct 29 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure (note 2) I

d

im

thermal resistance from junction to soldering point Ts≤ 95 °C; note 1 260 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=10V −−50 nA
DC current gain IC= 30 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.8 − pF
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz;

T

=25°C

amb

− 0.8 − pF

transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz − 5 − GHz
maximum unilateral power gain

(note 1)

IC= 30 mA; VCE= 5 V; f = 500 MHz;
T

=25°C

amb

= 2 mA; VCE= 5 V; f = 500 MHz;

C

ZS= opt.; T

amb

=25°C

− 16.5 − dB

− 1.9 − dB

intermodulation distortion note 3 −−60 − dB

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

2. Die mounted in a SOT37 package (BFR91).
= 30 mA; VCE= 5 V; RL=75Ω; VSWR < 2; T

3. I

C

Vp=VO= 300 mV at fp= 495.25 MHz;
Vq=VO−6 dB at fq= 503.25 MHz;
Vr=VO−6 dB at fr= 505.25 MHz;
measured at fp+fq−fr= 493.25 MHz.

amb

=25°C;

2

S

G

UM

10 log

--------------------------------------------------------------



1

–



21

2



S

1

–



11

dB=

2

S

22

1997 Oct 29 3

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

ΩΩΩ

680 pF

+24 V

560

680 pF

DUT

16 Ω

MEA454

Ω

handbook, halfpage

L3

240

1.2 k

Ω

390

L2

680 pF

75 Ω
input

L2=L3=5µH Ferroxcube choke, catalogue number
3122 10820150.

L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal
diameter 4 mm.

L1

Fig.2 Intermodulation distortion test circuit.

75 Ω

output

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Fig.3 Power derating curve.

Ts(

MBG246

o

C)

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE= 5 V; Tj=25°C.

MCD087

I (mA)

C

Fig.4 DC current gain as a function of

collector current; typical values.

1997 Oct 29 4

handbook, halfpage

1

C

c

(pF)

0.8

0.6

0.4

0.2

0

048 16

IE=ie= 0; f = 1 MHz; Tj=25°C.

12

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

MEA450

VCB (V)

20

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

handbook, halfpage

6

f

T

(GHz)

4

2

0

01020 40

VCE= 5 V; f = 500 MHz; Tj=25°C.

30

Fig.6 Transition frequency as a function of

collector current; typical values.

MEA449

I (mA)

C

30

handbook, halfpage

gain
(dB)

20

G

UM

10

I S I

0

2

10

IC= 30 mA; VCE= 5 V; T

amb

10

=25°C.

3

Fig.7 Gain as a function of frequency;

typical values.

MEA419

2

12

4

f (MHz)

10

3010 20

MEA453

I (mA)

C

40

10

handbook, halfpage

F

(dB)

5

0

0

VCE= 5 V; f = 500 MHz; ZS= opt.; T

amb

=25°C.

Fig.8 Minimum noise figure as a function of

collector current; typical values.

1997 Oct 29 5

10

handbook, halfpage

F

(dB)

8

6

4

2

0

–1

10

IC= 2 mA; VCE= 5 V; ZS= opt.; T

110

amb

f (GHz)

=25°C.

Fig.9 Minimum noise figure as a function of

frequency; typical values.

MEA452

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

60

handbook, halfpage

B

S

(mS)

40

20

0

20

40

60

02040 80

IC= 2 mA; VCE= 5 V; f = 500 MHz; T

2.5

1.9

4

3.5

3

60

Fig.10 Circles of constant noise figure;

typical values.

F = 4.5 dB

=25°C.

amb

MEA418

100

G (mS)

S

120

1997 Oct 29 6

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; Zo=50Ω; T

1

0.5

0.2

+ j

0

– j

0.2

0.5

=25°C.

amb

1000 MHz
800

10.2 10520.5

500

200

1

2

5

10

∞

10

5

2

MEA420

Fig.11 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; T

o

90

o

60

o

30

ϕ

o

0

180

o

120

o

150

20

o

200 MHz

500
800

10

1000

ϕ

o

30

MEA422

amb

=25°C.

150

o

120

o

o

90

o

60

Fig.12 Common emitter forward transmission coefficient (S21); typical values.

1997 Oct 29 7

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; T

o

90

800

0.10

o

60

o

30

ϕ

0.20

o

0

180

o

120

1000 MHz

o

150

500

200

o

ϕ

o

30

MEA423

amb

=25°C.

150

o

120

o

o

90

o

60

Fig.13 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; Zo=50Ω; T

1

0.5

0.2

+ j

0

– j

0.2

0.5

=25°C.

amb

10.2 10520.5
800

500

1000 MHz

200

1

2

5

10

∞

10

5

2

MEA421

Fig.14 Common emitter output reflection coefficient (S22); typical values.

1997 Oct 29 8

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

mm

VERSION

A

1.1

0.9

OUTLINE

SOT23

max.

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

1997 Oct 29 9

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 29 10

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR93

NOTES

1997 Oct 29 11

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie BesantRoad, Worli, MUMBAI 400 025,
Tel. [phone], Fax.[phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax.[phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax.[phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC,MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax.[phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax.[phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 29 Document order number: 9397 75002765