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BFR92W
Datasheet (Siemens)
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Datasheet BFR92W Datasheet (Siemens)

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Page 1
BFR 92W
NPN Silicon RF Transistor
• For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
• Complementary type: BFT 92W (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
BFR 92W P1s Q62702-F1488 1 = B 2 = E 3 = C SOT-323
Maximum Ratings Parameter Symbol Values Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation
T
≤ 86 °C
S
Junction temperature Ambient temperature Storage temperature
V V V V I I P
T T T
C B
CEO CES CBO EBO
tot
j A stg
15 V 20 20
2.5 30 mA
4
mW 280 150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
230 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Dec-10-1996
Page 2
BFR 92W
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 20 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 2.5 V,
EB
I
C
= 0
DC current gain
I
= 15 mA,
C
V
CE
= 8 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
15 - -
µA
- - 10 nA
- - 100 µA
- - 100
-
40 100 200
Semiconductor Group 2 Dec-10-1996
Page 3
BFR 92W
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
= 15 mA,
C
V
= 8 V, f = 500 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
I
= 2 mA,
C
f
= 900 MHz
V
CE
= 6 V,
Z
=
Z
S
Sopt
f
C
C
C
F
T
GHz
3.5 5 -
cb
pF
- 0.43 0.6
ce
- 0.25 -
eb
- 0.7 ­dB
-
1.8
-
f
= 1.8 GHz
V
2)
CE
Power gain
I
= 15 mA,
C
Z
=
Z
L
Lopt
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
I
= 15 mA,
C
f
= 900 MHz
f
= 1.8 GHz
2)
G
= |
ma
S
21
V
/
CE
S
= 8 V,
= 8 V,
| (k-(k2-1)
12
-
G
ma
Z
=
Z
S
Sopt
-
-
S
21e
2
|
|
Z
=
Z
S
L
= 50
Ω
-
-
1/2
)
2.9
15.5 10
13
7.5
-
-
-
-
-
Semiconductor Group 3 Dec-10-1996
Page 4
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFR 92W
IS = 0.1213 fA VAF = 30 V NE = 1.9052 ­VAR = 14.599 V NC = 1.371 ­RBM = 7.8145
Ω
CJE = 10.416 fF TF = 26.796 ps ITF = 4.4601 mA VJC = 0.84079 V TR = 1.2744 ns MJS = 0­XTI = 3-
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG
BF = 94.733 ­IKF = 0.46227 A BR = 10.729 ­IKR = 0.01 A RB = 14.998 RE = 0.29088 VJE = 0.70618 V XTF = 0.3817 ­PTF = 0 deg MJC = 0.4085 ­CJS = 0 fF XTB = 0 ­FC = 0.99545 -
Ω Ω
NF = 1.0947 ­ISE = 129.55 fA NR = 0.8983 ­ISC = 0.75557 fA IRB = 0.01652 mA RC = 0.13793
Ω
MJE = 0.34686 ­VTF = 0.32861 V CJC = 946.47 fF XCJC = 0.13464 ­VJS = 0.75 V EG = 1.11 eV TNOM 300 K
Package Equivalent Circuit:
LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0nH LCO = 0.41 nH CBE = 61 f F CCB = 101 fF CCE = 175 fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group 4 Dec-10-1996
Page 5
BFR 92W
Total power dissipation
* Package mounted on epoxy
300
mW
P
tot
200
150
100
50
P
tot
= f (
T
A
T
*,
T
A
T
S
)
S
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
3
10
K/W
R
thJS
2
10
1
10
0
10
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005 D = 0
= f (
t
TA,T
)
p
S
Permissible Pulse Load
P
totmax
/
P
totDC
= f (
t
)
p
3
10
-
P
/
P
totDC
10
10
2
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
0
10
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0
10
s
t
p
Semiconductor Group 5 Dec-10-1996
Page 6
BFR 92W
Collector-base capacitance
V
=
v
BE
C
cb
= 0, f = 1MHz
be
0.9
pF
0.7
0.6
0.5
0.4
0.3 0 4 8 12 16 V 22
C
cb
= f (
V
)
CB
V
R
Transition frequency
V
= Parameter
CE
6.0
GHz
5.0
f
10V
T
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 5 10 15 20 25 mA 35
f
T
= f (
I
C
)
3V
2V
1V
0.7V
I
C
Power Gain
f
= 0.9GHz
V
= Parameter
CE
18
dB
14
G
12 10
8 6 4 2 0
-2
-4
-6 0 5 10 15 20 25 mA 35
G
ma
,
G
ms
= f(
I
)
C
10V
5V 3V
2V
1V
0.7V
I
C
Power Gain
f
= 1.8GHz
V
= Parameter
CE
12
dB
G
8
6
4
2
0
-2
-4
-6 0 5 10 15 20 25 mA 35
G
ma
,
G
ms
= f(
I
0.7V
)
C
10V
5V 3V
2V
1V
I
C
Semiconductor Group
6 Dec-10-1996
Page 7
BFR 92W
Power Gain
G
ma
|
f
= Parameter
18
I
=15mA
C
dB
G
14
12
10
8
6
4
2
,
G
= f(
V
S
ms
21
|2 = f(
CE
V
CE
):_____
):---------
0.9GHz
0.9GHz
1.8GHz
1.8GHz
Intermodulation Intercept Point
(3rd order, Output,
V
= Parameter, f = 900MHz
CE
25
dBm
IP
3
15
10
5
ZS
=
Z
L
1V
=50Ω)
2V
3V
IP
3
5V 4V
=f(
I
)
C
0
0 2 4 6 8 10 V 13
Power Gain
V
= Parameter
CE
32
I
=15mA
C
dB
26
G
22
18
14
10
6
2
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
G
ma
0
V
CE
,
G
ms
= f(f)
10V
3V
1V
0.7V
f
Power Gain |
V
CE
S
21
0 5 10 15 20 mA 30
S
|2= f(f)
21
= Parameter
28
I
=15mA
C
dB
20
16
12
8
4
0
-4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
I
C
10V
2V 1V
0.7V
f
Semiconductor Group
7 Dec-10-1996
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