Page 1
DISCRETE SEMICONDUCTORS
M3D173
DATA SHEET
BFR92AT
NPN 5 GHz wideband transistor
Preliminary specification 1999 Oct 18
Page 2
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
FEATURES
• High power gain
• Gold metallization ensures excellent reliability
• SOT416 (SC75) package.
APPLICATIONS
It is designed for use in RF amplifiers, mixers and
oscillators with signal frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated in a plastic SOT416
(SC75) package. The BFR92AT uses the same crystal as
the SOT23 version, BFR92A.
PINNING
PIN DESCRIPTION
1base
2 emitter
3 collector
handbook, halfpage
12
Marking code: P2.
3
Fig.1 SOT416
MAM337
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F noise figure I
T
j
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−25 mA
total power dissipation up to Ts=93°C; note 1 −−300 mW
current gain IC=15mA; VCE=10V 40 90 −
feedback capacitance IC=0; VCE=10V; f=1MHz;
T
=25°C
amb
− 0.35 − pF
transition frequency IC=15mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power
gain
IC=15mA; VCE=10V; f=1GHz;
T
=25°C
amb
=15mA; VCE=10V; f=2GHz;
I
C
T
=25°C
amb
=5mA; VCE= 10 V; f = 1 GHz;
C
Γ
= Γ
s
opt
− 14 − dB
− 8 − dB
− 2 − dB
junction temperature −−150 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1999 Oct 18 2
Page 3
Philips Semiconductors Preliminary specification
Fig.2 Power derating curve
0 50 100 200
200
0
MLB540
150
T ( C)
o
s
P
tot
(mW)
300
400
100
NPN 5 GHz wideband transistor BFR92AT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation up to Ts=93°C; see Fig.2; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to
up to Ts=93°C; note 1 190 K/W
soldering point
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
1999 Oct 18 3
Page 4
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
CHARACTERISTICS
T
=25°C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
collector leakage current IE=0; VCB=10V −−50 nA
DC current gain IC=15mA; VCE= 10 V 40 90 −
collector capacitance IE=ie=0; VCB=10V; f=1MHz − 0.6 − pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz − 0.9 − pF
feedback capacitance IC=0; VCE=10V; f=1MHz − 0.35 − pF
transition frequency IC=15mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power
gain; note 1
IC=15mA; VCE=10V;
f=1GHz; T
I
=15mA; VCE=10V;
C
f=2GHz; T
=5mA; VCE=10V;
C
f=1GHz; Γ
=5mA; VCE=10V;
I
C
f=2GHz; Γ
amb
amb
s
s
= Γ
= Γ
=25°C
=25°C
opt
opt
− 14 − dB
− 8 − dB
− 2 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero and
UM
2
s
G
UM
--------------------------------------------------------
10
1s
21
2
–()1s
11
–()
22
dB.log=
2
1999 Oct 18 4
Page 5
Philips Semiconductors Preliminary specification
Fig.3 DC current gain as a function of collector
current; typical values.
VCE=10V.
handbook, halfpage
0102030
120
0
40
80
MCD074
h
FE
I (mA)
C
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE= 5 V; f = 500 MHz; T
amb
=25°C.
handbook, halfpage
4
2
0
MGC884
101
6
f
T
(GHz)
I (mA)
C
10
2
NPN 5 GHz wideband transistor BFR92AT
1.0
C
re
(pF)
0.8
0.6
0.4
0.2
0
0
IC=0; f=1MHz.
48
12 16
MGC883
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
20
1999 Oct 18 5
Page 6
Philips Semiconductors Preliminary specification
Fig.6 Gain as a function of collector current;
typical values.
VCE=10V;f=500MHz.
handbook, halfpage
0
30
20
10
0
510
MGC885
15 20
gain
(dB)
I (mA)
C
MSG
G
UM
Fig.8 Gain as a function of frequency;
typical values.
VCE=10V;IC=5mA.
handbook, halfpage
50
0
10
MGC887
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
G
max
MSG
NPN 5 GHz wideband transistor BFR92AT
30
handbook, halfpage
gain
(dB)
20
MSG
G
10
0
0
VCE=10V;f=1GHz.
510
15 20
Fig.7 Gain as a function of collector current;
typical values.
MGC886
UM
I (mA)
C
1999 Oct 18 6
G
f (MHz)
MGC888
max
4
10
50
handbook, halfpage
gain
(dB)
VCE=10V;IC=15mA.
G
UM
40
MSG
30
20
10
0
10
2
10
3
10
Fig.9 Gain as a function of frequency;
typical values.
Page 7
Philips Semiconductors Preliminary specification
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE=10V.
handbook, halfpage
4
2
0
MGC889
101
6
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
10
2
NPN 5 GHz wideband transistor BFR92AT
handbook, halfpage
6
F
(dB)
4
IC = 15 mA
10 mA
2
0
2
10
VCE=10V.
10
5 mA
3
f (MHz)
Fig.11 Minimum noise figure as a function of
frequency; typical values.
MGC890
10
4
o
90
handbook, full pagewidth
135
1
o
0.5
F = 4 dB
F = 3 dB
o
45
2
1.0
0.8
0.6
o
180
0
f=500MHz; VCE=10V; IC=5mA; Zo=50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
0.2
0.2
135
F = 2 dB
5
F = 1.6 dB
min
Γ
opt
0.50.2
1
2 5
5
0.5
o
1
o
90
2
o
45
MGC891
0.4
0.2
o
00
1.0
1999 Oct 18 7
Page 8
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
o
90
handbook, full pagewidth
180
1
135
o
0.5
o
45
2
(4)
(3)
0.2
(5)
(6)
o
0.2
0
0.5
(2)
5
(1)
21 5
(7)
1.0
0.8
0.6
0.4
0.2
o
00
(1) Γ
; F
=2.1dB.
opt
min
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
(5)
Γ
ms;Gmax
=15.7dB.
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
f=1GHz; VCE=10V; IC=5mA; Zo=50Ω.
Fig.13 Common emitter noise figure circles; typical values.
handbook, full pagewidth
180
0.2
135
(8)
0.5
o
2
1
o
90
o
90
1
o
135
0.5
(4)
(3)
(1)
(2)
21 5
0.2
o
0.2
0
0.5
(5)
5
o
45
MGC892
1.0
1.0
o
45
2
0.8
0.6
5
0.4
0.2
o
00
5
o
45
MGC893
1.0
(1) Γ
; F
opt
min
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
Γ
(5)
ms;Gmax
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
=3dB.
=9.1dB.
0.2
135
(6)
(7)
(8)
0.5
o
2
1
o
90
f=2GHz; VCE=10V; IC=5mA; Zo=50Ω.
Fig.14 Common emitter noise figure circles; typical values.
1999 Oct 18 8
Page 9
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
o
90
handbook, full pagewidth
135
1
o
0.5
o
45
2
1.0
0.8
0.6
VCE=10V; IC=15mA; Zo=50Ω.
handbook, full pagewidth
0.4
0.2
o
00
180
0.2
5
3 GHz
o
0.2 1
0
0.5
2
5
40 MHz
0.2
135
0.5
o
2
1
o
90
5
o
45
MGC894
1.0
Fig.15 Common emitter input reflection coefficient (s11); typical values.
o
90
135
o
o
45
135
40 MHz
o
o
180
50 40 30 20 10
90
3 GHz
o
o
0
o
45
MGC895
VCE=10V; IC=15mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
1999 Oct 18 9
Page 10
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
o
handbook, full pagewidth
90
VCE=10V; IC=15mA.
o
135
o
180
0.25 0.20 0.15 0.10 0.05
o
135
o
90
40 MHz
o
45
o
0
o
45
MGC896
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
3 GHz
handbook, full pagewidth
VCE=10V; IC=15mA; Zo=50Ω.
o
90
1.0
0.8
135
1
o
0.5
o
45
2
0.6
0.2
5
0.4
0.2
180
o
0.2 0.5 2
0
1 5
o
00
40 MHz
0.2
135
0.5
o
1
90
3 GHz
2
o
5
o
45
MGC897
1.0
Fig.18 Common emitter output reflection coefficient (s22); typical values.
1999 Oct 18 10
Page 11
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT416
D
v M
A
3
12
e
b
1
p
e
w M
B
E
H
E
A
A
1
detail X
AB
L
p
X
Q
c
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
0.95
mm
0.60
OUTLINE
VERSION
SOT416 SC-75
max
0.1
b
cD
p
0.30
0.25
0.10
1.8
1.4
0.15
IEC JEDEC EIAJ
E
0.9
0.7
REFERENCES
e
e
H
L
Qw
1
1.75
0.5
1
1.45
p
E
0.45
0.23
0.15
0.13
v
0.2
0.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Oct 18 11
Page 12
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR92AT
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 18 12
Page 13
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1999
Internet: http://www.semiconductors.philips.com
68
Printed in The NetherlandsV budgetnum/ed/pp13 Date of release: 1999 Oct 18 Document order number: 9397 750 06525
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