Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR91A
Vishay Telefunken
94 9308
1
13623
BFR91A Marking: BFR91A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
20 V
12 V
2 V
50 mA
300 mW
150
–65 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85031
Rev. 3, 20-Jan-99
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Page 2
BFR91A
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 20 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 5 mA
VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 30 mA
Power gain VCE = 8 V, IC = 30 mA, ZS = 50 W,
Linear output voltage – two
tone intermodulation test
ZL = Z
VCE = 8 V, IC = 30 mA, dIM = 60 dB,
f
= 806 MHz, f2 = 810 MH,
1
ZS = ZL = 50
, f = 800 MHz
Lopt
W
Third order intercept point VCE = 8 V, IC = 30 mA, f = 800 MHz IP
F 1.6 dB
F 2.3 dB
G
V1 = V
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
pe
2
3
100mA
100 nA
10
m
12 V
0.1 0.4 V
40 90 150
6 GHz
0.4 pF
0.3 pF
1.5 pF
14 dB
280 mV
32 dBm
A
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Document Number 85031
Rev. 3, 20-Jan-99
Page 3
Common Emitter S–Parameters
BFR91A
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
8 5 1000 0.27 –153.8 3.50 77.8 0.10 65.0 0.58 –41.3
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.92 –22.1 6.38 162.8 0.02 78.4 0.9 –8.1
300 0.78 –61.3 5.42 134.7 0.05 61.5 0.88 –20.8
500 0.64 –92.7 4.38 114.3 0.07 52.8 0.79 –28.2
800 0.51 –128.0 3.19 92.9 0.09 49.3 0.73 –35.9
2 1000 0.45 –146.3 2.65 82.3 0.10 50.4 0.71 –40.6
1200 0.41 –161.4 2.27 73.8 0.11 53.1 0.70 –45.1
1500 0.37 177.9 1.85 63.0 0.12 57.8 0.71 –52.3
1800 0.34 159.7 1.58 53.4 0.14 61.8 0.73 –60.0
2000 0.32 149.7 1.44 48.5 0.16 63.8 0.74 –64.9
100 0.79 –31.8 13.51 153.5 0.02 75.1 0.92 –13.4
300 0.54 –78.6 9.24 119.9 0.04 61.9 0.73 –26.4
500 0.40 –107.8 6.44 101.9 0.06 61.0 0.64 –31.1
800 0.30 –138.4 4.30 85.7 0.09 63.7 0.59 –36.3
1200 0.25 –167.2 2.98 71.1 0.12 65.7 0.58 –45.8
1500 0.22 175.1 2.41 62.4 0.14 66.0 0.59 –53.2
1800 0.21 157.8 2.06 54.2 0.18 65.3 0.61 –60.6
2000 0.20 149.4 1.88 49.7 0.19 64.5 0.62 –65.5
100 0.63 –43.0 21.15 143.4 0.02 72.5 0.85 –18.5
300 0.35 –91.7 11.55 109.2 0.04 67.2 0.62 –28.0
500 0.25 –117.7 7.47 95.1 0.06 69.5 0.55 –30.6
800 0.20 –145.2 4.85 82.1 0.09 71.1 0.53 –36.4
10 1000 0.18 –160.0 3.93 75.5 0.11 71.1 0.52 –41.3
1200 0.17 –171.7 3.32 69.8 0.13 70.4 0.52 –45.9
1500 0.16 173.5 2.70 62.0 0.16 68.7 0.53 –53.7
1800 0.15 153.9 2.30 54.6 0.19 66.4 0.54 –61.4
2000 0.15 148.4 2.09 50.3 0.21 64.8 0.55 –66.5
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85031
Rev. 3, 20-Jan-99
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Page 4
BFR91A
8
Vishay Telefunken
VCE/V IC/mA f/MHz
100 0.44 –55.8 28.24 132.6 0.02 72.8 0.76 –22.3
300 0.22 –103.9 12.79 102.0 0.04 74.1 0.54 –26.5
500 0.16 –127.5 8.00 90.7 0.06 75.8 0.50 –28.6
800 0.14 –153.3 5.13 79.8 0.09 75.4 0.49 –35.2
20 1000 0.13 –165.9 4.15 73.9 0.11 74.2 0.48 –40.4
1200 0.12 –177.3 3.51 68.7 0.13 72.9 0.49 –45.5
1500 0.12 170.1 2.84 61.5 0.17 70.0 0.50 –53.6
1800 0.12 152.3 2.42 54.4 0.20 67.1 0.51 –61.6
2000 0.11 147.1 2.21 50.6 0.22 65.0 0.52 –66.7
100 0.34 –64.0 31.01 127.3 0.02 73.3 0.71 –23.3
300 0.17 –112.9 13.08 99.1 0.04 77.2 0.52 –24.9
500 0.14 –136.2 8.10 88.9 0.06 77.8 0.49 –27.3
800 0.13 –159.4 5.17 78.7 0.09 76.8 0.48 –34.3
30 1000 0.12 –171.4 4.18 73.0 0.11 75.3 0.48 –39.6
1200 0.12 178.6 3.53 68.0 0.13 73.6 0.48 –45.0
1500 0.12 165.7 2.87 61.1 0.17 70.5 0.49 –53.3
1800 0.11 147.8 2.44 54.2 0.20 67.4 0.50 –61.3
2000 0.11 143.7 2.23 50.3 0.22 65.4 0.51 –66.6
S1 1 S21 S12 S22
LIN
MAG
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
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Document Number 85031
Rev. 3, 20-Jan-99
Page 5
BFR91A
Vishay Telefunken
Typical Characteristics (T
400
350
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )12845
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
7000
6000
5000
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )12896
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.5
3.0
2.5
f=1MHz
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
0 1020304050
IC – Collector Current ( mA )12895
VCE=5V
f=500MHz
Figure 2. Transition Frequency vs. Collector Current
2.0
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0 5 10 15 20 25 30
IC – Collector Current ( mA )12897
VCE=8V
f=800MHz
Z
=50
W
S
Figure 4. Noise Figure vs. Collector Current
Document Number 85031
Rev. 3, 20-Jan-99
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Page 6
BFR91A
ÁÁ
Vishay Telefunken
VCE = V, IC = 30 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
2.0 GHz
0
–j0.2
13 518
0.2
–j0.5
1.0
1
0.3
0.1
–j
Figure 5. Input reflection coefficient
j2
2
5
–j2
W
–j5
S
12
90°
120°
150°
j5
0.5
1
180°
–150°
–120° –60°
13 519
0.1
–90°
1.5
1.0
2.0 GHz
60°
0.08 0.16
30°
0°
–30°
Figure 7. Reverse transmission coefficient
S
22
90°
120°
150°
180°
–150°
13 520
0.1
0.3
2.0 GHz
–120° –60°
–90°
20 40
Figure 6. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 521
–j0.5
0.2
0.5
1
1.0
2.0 GHz
–j
j2
j5
2
5
0.3
0.1
–j2
1
–j5
Figure 8. Output reflection coefficient
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Document Number 85031
Rev. 3, 20-Jan-99
Page 7
Dimensions of BFR91A in mm
BFR91A
Vishay Telefunken
96 12244
Document Number 85031
Rev. 3, 20-Jan-99
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Page 8
BFR91A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85031
Rev. 3, 20-Jan-99
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