Page 1
Silicon NPN Planar RF Transistor
Applications
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR90A
94 9308
1
BFR90A Marking: BFR90A
Plastic case (TO 50)
1= Collector; 2= Emitter; 3= Base
Absolute Maximum Ratings
Parameters Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60°C P
amb
Maximum Thermal Resistance
Parameters Symbol Value Unit
Junction ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35 mm Cu R
CBO
CEO
EBO
C
tot
j
stg
thJA
20 V
15 V
2 V
30 mA
300 mW
150 °C
–65 to +150 °C
300 K/W
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
1 (6)
Page 2
BFR90A
Electrical DC Characteristics
Tj = 25°C, unless otherwise specified
Parameters / T est Conditions Symbol Min. Typ. Max. Unit
Collector-emitter cut-off current
V
= 20 V, VBE = 0 I
CE
Collector-base cut-off current
V
= 15 V, I
CB
Emitter-base cut-off current
V
= 2 V, I
EB
Collector-emitter breakdown voltage
I
= 1 mA, I
C
DC forward current transfer ratio
V
= 10 V, IC = 14 mA h
CE
Electrical AC Characteristics
T
= 25°C
amb
Transition frequency
V
= 10 V, IC = 14 mA, f = 500 MHz f
CE
Collector-emitter capacitance
V
= 10 V, f = 1 MHz C
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz C
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz C
EB
Noise figure
V
= 10 V, IC = 2 mA, f = 800 MHz, ZS = 50
CE
Power gain
V
= 10 V, IC = 14 mA, ZL = Z
CE
Linear output voltage – two tone intermodulation test
V
= 10 V, IC = 14 mA, dIM = 60 dB,
CE
Z
= ZL = 50
S
Third order intercept point
V
= 10 V, IC = 14 mA, f = 800 MHz IP
CE
= 0 I
E
= 0 I
C
= 0 V
B
Parameters / T est Conditions Symbol Min. Typ. Max. Unit
, f = 800 MHz G
Lopt
f1 = 806 MHz, f2 = 810 MHz V
CES
CBO
EBO
(BR)CEO
FE
T
ce
cb
eb
F 1.8 dB
pe
= V
1
2
3
15 V
50 100 150
6 GHz
0.25 pF
0.3 pF
0.9 pF
16 dB
120 mV
24 dBm
100
100 nA
10
m
A
m
A
2 (6)
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
Page 3
Common Emitter S-Parameters
Z
= 50
0
W
BFR90A
VCE/V IC/mA f/MHz
100
300
500
800
2
5
5
10
14
20
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.90
0.80
0.67
0.52
0.45
0.40
0.34
0.30
0.28
0.77
0.56
0.41
0.30
0.26
0.24
0.21
0.19
0.18
0.61
0.36
0.26
0.20
0.18
0.17
0.16
0.14
0.14
0.51
0.28
0.20
0.17
0.15
0.15
0.14
0.13
0.13
0.41
0.22
0.17
0.15
0.14
0.14
0.14
0.14
0.13
S
11
ANG LIN
deg deg deg deg
–17.7
–50.4
–78.1
–111.2
–128.8
–144.1
–164.2
176.6
165.9
–27.0
–69.4
–97.4
–126.9
–142.7
–155.8
–174.3
167.7
158.7
–38.3
–85.3
–111.7
–139.9
–154.3
–166.5
177.7
160.4
153.6
–44.8
–93.9
–120.2
–147.3
–160.1
–172.1
172.8
155.7
147.1
–53.2
–105.4
–131.2
–156.4
–170.4
177.4
164.4
147.5
141.0
MAG
6.25
5.51
4.66
3.56
2.99
2.58
2.11
1.80
1.64
13.24
9.72
7.01
4.76
3.89
3.29
2.67
2.27
2.06
20.89
12.29
8.10
5.28
4.28
3.61
2.91
2.48
2.26
24.51
13.01
8.36
5.40
4.36
3.69
2.98
2.52
2.29
27.71
13.38
8.45
5.41
4.36
3.68
2.96
2.51
2.28
S
21
ANG LIN
165.4
140.9
121.6
99.9
89.0
80.3
69.3
59.3
54.2
156.9
125.0
106.7
89.9
81.8
75.1
66.5
58.1
53.8
147.5
113.4
98.2
84.9
78.0
72.3
64.7
57.1
53.1
142.5
108.9
95.3
83.0
76.6
71.3
63.9
56.5
52.8
137.2
104.9
92.6
81.3
75.2
69.8
62.5
55.4
51.5
MAG
0.02
0.05
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.02
0.04
0.05
0.07
0.08
0.10
0.12
0.14
0.16
0.02
0.03
0.05
0.07
0.08
0.10
0.12
0.15
0.17
0.01
0.03
0.05
0.07
0.08
0.10
0.13
0.15
0.17
0.01
0.03
0.04
0.07
0.09
0.10
0.13
0.15
0.17
S
12
ANG LIN
81.1
65.5
56.7
51.2
51.0
52.1
54.6
57.8
59.4
76.2
63.9
61.8
63.5
64.6
65.7
66.2
66.0
65.5
74.8
67.7
69.4
71.4
71.8
71.6
70.3
68.7
67.5
74.5
71.0
72.9
74.0
74.0
73.4
71.7
69.8
68.3
74.0
74.1
75.6
76.1
75.4
74.5
72.5
70.4
68.8
MAG
0.98
0.91
0.84
0.77
0.75
0.74
0.74
0.75
0.76
0.95
0.79
0.70
0.65
0.64
0.63
0.64
0.66
0.67
0.89
0.68
0.61
0.58
0.58
0.58
0.59
0.61
0.62
0.86
0.65
0.59
0.57
0.57
0.57
0.58
0.60
0.61
0.82
0.62
0.58
0.56
0.56
0.57
0.58
0.59
0.60
S
22
ANG
–6.8
–18.2
–25.8
–33.8
–38.4
–42.7
–49.4
–56.3
–61.0
–10.9
–23.5
–28.5
–34.1
–38.3
–42.5
–49.3
–56.2
–60.6
–15.0
–24.6
–27.5
–32.8
–37.0
–41.5
–48.7
–55.7
–60.4
–16.7
–24.1
–26.2
–31.8
–36.2
–40.7
–48.0
–55.1
–59.8
–18.0
–22.9
–24.8
–30.7
–35.3
–40.0
–47.3
–54.5
–59.3
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
3 (6)
Page 4
BFR90A
10
Common Emitter S-Parameters
Z
= 50
0
W
VCE/V IC/mA f/MHz
100
300
500
800
5 30
2
5
10
14
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.30
0.19
0.16
0.16
0.16
0.16
0.16
0.16
0.16
0.92
0.87
0.69
0.53
0.45
0.39
0.33
0.29
0.27
0.80
0.58
0.43
0.30
0.26
0.22
0.19
0.17
0.15
0.65
0.39
0.27
0.19
0.17
0.15
0.13
0.18
0.11
0.56
0.31
0.21
0.16
0.14
0.13
0.12
0.11
0.11
S
11
ANG LIN
deg deg deg deg
–67.7
–125.3
–149.8
–171.3
177.6
167.5
156.2
139.1
133.3
–16.7
–47.6
–74.0
–106.0
–122.8
–138.0
–158.2
–177.6
172.2
–24.7
–63.9
–89.9
–117.6
–132.1
–145.9
–163.0
177.9
168.8
–34.2
–77.0
–99.8
–124.7
–138.1
–151.4
–167.7
174.5
165.6
–39.9
–83.1
–104.9
–129.3
–142.2
–155.9
–170.8
169.7
162.3
MAG
29.72
13.17
8.19
5.23
4.21
3.54
2.85
2.41
2.19
6.23
5.55
4.75
3.67
3.10
2.67
2.19
1.87
1.70
13.17
9.89
7.21
4.94
4.04
3.42
2.77
2.36
2.15
20.73
12.60
8.38
5.50
4.45
3.76
3.04
2.58
2.35
24.49
13.40
8.66
5.62
4.55
3.83
3.10
2.63
2.39
S
21
ANG LIN
131.4
101.2
90.0
79.2
73.3
68.2
60.9
53.8
49.9
166.0
142.1
123.3
101.9
90.9
82.3
71.2
61.2
56.1
158.0
126.8
108.5
91.6
83.4
76.8
68.0
59.8
55.6
149.1
115.1
99.9
86.3
79.4
74.0
66.4
58.8
54.8
144.2
110.5
96.8
84.4
78.0
72.7
65.4
58.1
54.3
MAG
0.01
0.03
0.04
0.07
0.08
0.10
0.126
0.15
0.17
0.01
0.03
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.01
0.03
0.04
0.06
0.07
0.08
0.10
0.12
0.13
0.01
0.03
0.04
0.06
0.07
0.08
0.11
0.13
0.14
0.01
0.03
0.04
0.06
0.07
0.08
0.10
0.13
0.14
S
12
ANG LIN
74.3
76.3
78.0
77.8
77.1
76.0
73.9
71.7
70.0
80.6
67.1
58.8
54.1
54.4
56.0
59.8
63.6
65.5
77.5
65.7
63.5
65.9
67.5
69.1
70.2
70.7
70.4
74.8
68.7
70.7
73.2
74.3
74.2
74.1
73.1
72.3
74.3
71.4
74.1
76.0
76.3
76.1
75.3
74.0
73.0
MAG
0.78
0.61
0.58
0.57
0.57
0.58
0.59
0.61
0.62
0.98
0.93
0.87
0.82
0.80
0.79
0.80
0.81
0.83
0.96
0.83
0.76
0.72
0.71
0.71
0.72
0.79
0.75
0.92
0.75
0.69
0.67
0.67
0.67
0.68
0.70
0.72
0.89
0.72
0.67
0.66
0.66
0.66
0.68
0.70
0.71
S
22
ANG
–18.4
–20.7
–22.8
–29.0
–33.9
–38.6
–46.1
–53.5
–58.3
–5.7
–15.5
–22.2
–29.5
–33.9
–38.0
–44.3
–50.8
–55.3
–8.8
–19.3
–23.7
–29.2
–33.2
–37.2
–43.6
–50.3
–54.7
–11.8
–19.8
–22.6
–27.8
–31.9
–36.2
–42.7
–49.5
–53.9
–13.1
–19.3
–21.6
–26.9
–31.0
–35.5
–42.2
–49.1
–53.5
4 (6)
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
Page 5
Dimensions in mm
BFR90A
96 12244
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
5 (6)
Page 6
BFR90A
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
6 (6)
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev . A1, 17-Apr-96
Loading...