Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1995 September
1999 Aug 23
Page 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
FEATURES
• High power gain
The transistor is encapsulated in a
plastic SOT23 envelope.
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
Code: N29
page
3
1 base
DESCRIPTION
The BFR540 is an npn silicon planar
2 emitter
3 collector
12
Top view
MSB003
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
Fig.1 SOT23.
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
S
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−120 mA
total power dissipation up to Ts = 70 °C; note 1 −−500 mW
DC current gain IC = 40 mA; VCE = 8 V 60 120 250
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.6 − pF
transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz
maximum unilateral
power gain
2
insertion power gain IC = 40 mA; VCE = 8 V;
IC = 40 mA; VCE = 8 V;
T
= 25 °C; f = 900 MHz
amb
= 40 mA; VCE = 8 V;
I
C
T
= 25 °C; f = 2 GHz
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
s
amb
s
amb
s
amb
= Γ
= Γ
= Γ
= 10 mA; VCE= 8 V;
opt;IC
=25°C; f = 900 MHz
= 40 mA; VCE= 8 V;
opt;IC
=25°C; f = 900 MHz
= 10 mA; VCE= 8 V;
opt;IC
=25°C; f = 2 GHz
− 14 − dB
− 7 − dB
12 13 − dB
− 1.3 1.8 dB
− 1.9 2.4 dB
− 2.1 − dB
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1999 Aug 23 2
Page 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation up to Ts=70°C; note 1 − 500 mW
storage temperature −65 150 °C
junction temperature − 175 °C
from junction to soldering point see note 1 260 K/W
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1999 Aug 23 3
Page 4
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 34 − dBm
V
o
collector cut-off current IE = 0; VCB = 8 V −−50 nA
DC current gain IC= 40 mA; VCE = 8 V 60 120 250
emitter capacitance IC = ic= 0; VEB = 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.6 − pF
transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz
maximum unilateral
power gain (note 1)
2
insertion power gain IC = 40 mA; VCE = 8 V;
output power at 1 dB gain
compression
output voltage (note 3) IC= 40 mA; VCE=8 V;
IC = 40 mA; VCE = 8 V;
T
= 25 °C; f = 900 MHz
amb
= 40 mA; VCE = 8 V;
I
C
= 25 °C; f = 2 GHz
T
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
= Γ
s
amb
= Γ
s
amb
= Γ
s
amb
= 10 mA; VCE= 8 V;
opt;IC
=25°C; f = 900 MHz
= 40 mA; VCE= 8 V;
opt;IC
=25°C; f = 900 MHz
= 10 mA; VCE= 8 V;
opt;IC
=25°C; f = 2 GHz
IC= 40 mA; VCE=8 V;RL=50Ω;
T
=25°C; f = 900 MHz
amb
ZL=ZS=75Ω;T
amb
=25°C
− 14 − dB
− 7 − dB
12 13 − dB
− 1.3 1.8 dB
− 1.9 2.4 dB
− 2.1 − dB
− 21 − dBm
− 550 − mV
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12 is zero and
UM
----------------------------------------------------------
1S
–()1S
T
G
C
amb
10
UM
= 40 mA; VCE=8 V;RL=50Ω;
=25°C; f = 900 MHz;
2
S
21
2
11
–()
dB.log=
2
22
fp = 900 MHz; fq= 902 MHz;
measured at f
= 898 MHz and f
(2p−q)
(2q−p)
= 904 MHz.
3. dim= −60 dB (DIN 45004B);
Vp=VO;Vq=VO−6 dB; fp= 795.25 MHz;
VR=VO−6 dB; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f
= 793.25 MHz; preliminary data.
(p+q-r)
1999 Aug 23 4
Page 5
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
600
1/2 page (Datasheet)
P
tot
(mW)
400
200
0
0 50 100 200
Fig.2 Power derating curve.
150
MEA398 - 1
o
T ( C)
s
22 mm
10
MRA687
IC (mA)
250
handbook, halfpage
h
FE
200
150
100
50
0
−2
10
VCE= 8 V.
−1
10
1
Fig.3 DC current gain as a function of collector
current.
2
10
1.0
handbook, halfpage
C
re
(pF)
0.8
0.6
0.4
0.2
0
04812
IC = 0; f = 1 MHz.
MRA688
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
1999 Aug 23 5
12
handbook, halfpage
f
T
(GHz)
8
4
0
−1
10
T
=25°C; f = 1 GHz.
amb
11010
IC (mA)
Fig.5 Transition frequency as a function of
collector current.
MRA689
V
= 8V
CE
VCE = 4V
2
Page 6
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.
= maximum available
max
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
5
0
020
VCE= 8 V; f = 900 MHz.
G
max
G
UM
40 60
Fig.6 Gain as a function of collector current.
MRA690
I
(mA)
C
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
020
VCE= 8 V; f = 2 GHz.
G
max
G
UM
40 60
Fig.7 Gain as a function of collector current.
MRA691
I
(mA)
C
G
max
f (MHz)
MRA692
4
10
50
handbook, halfpage
gain
(dB)
G
40
MSG
30
20
10
0
10
VCE= 8 V; Ic= 10 mA.
UM
2
10
3
10
Fig.8 Gain as a function of frequency.
1999 Aug 23 6
50
handbook, halfpage
gain
(dB)
G
40
MSG
30
20
10
0
10
VCE= 8 V; Ic= 40 mA.
Fig.9 Gain as a function of frequency.
UM
MRA693
G
max
2
10
3
10
f (MHz)
4
10
Page 7
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
handbook, halfpage
5
F
min
(dB)
4
3
2
1
0
VCE= 8 V.
1
2000 MHz
1000 MHz
900 MHz
500 MHz
f = 900 MHz
1000 MHz
G
ass
F
min
10
2000 MHz
IC (mA)
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
MRA698
20
G
ass
(dB)
15
10
5
0
−5
2
10
handbook, halfpage
5
F
min
(dB)
4
3
2
1
0
10
VCE= 8 V.
IC = 10 mA
40 mA
10 mA
2
40 mA
G
ass
F
min
3
10
f (MHz)
MRA699
20
G
ass
(dB)
15
10
5
0
−5
4
10
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
Zo=50Ω.
VCE= 8V; IC= 10 mA; f = 900 MHz.
pot. unst.
region
180°
stability
circle
135°
0.2
0
0.2
−135°
90°
1
0.5
F
= 1.3 dB
min
Γ
OPT
0.2 0.5
F = 1.5 dB
F = 2 dB
F = 3 dB
0.5
1 2 5
1
−90°
Fig.12 Noise circle figure.
1.0
45°
2
5
5
2
−45°
MRA700
0.8
0.6
0.4
0.2
0°
0
1.0
1999 Aug 23 7
Page 8
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
handbook, full pagewidth
Zo=50Ω.
VCE= 8 V; IC= 10 mA; f = 2000MHz.
180°
90°
1
G
135°
max
0
−135°
0.5
G = 5 dB
= 2.1 dB
Γ
OPT
F = 2.5 dB
G = 6 dB
F = 3 dB
F = 4 dB
1
−90°
G = 7 dB
= 7.8 dB
Γ
MS
0.2 0.5 1 2 5
F
min
0.2
0.5
Fig.13 Noise circle figure.
1.0
45°
2
5
5
2
−45°
MRA701
0.8
0.6
0.4
0.2
0°
0
1.0
1999 Aug 23 8
Page 9
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
handbook, full pagewidth
VCE= 8 V; IC= 40 mA.
Zo=50Ω.
90°
1
180°
135°
0.2
0
0.2
−135°
0.5
3 GHz
0.2 0.5
0.5
1 2 5
40 MHz
1
−90°
45°
2
2
−45°
Fig.14 Common emitter input reflection coefficient (S11).
5
5
MRA694
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
handbook, full pagewidth
VCE= 8 V; IC= 40 mA.
90°
135°
40 MHz
180°
50 40 30 20 10
−135°
3 GHz
−90°
45°
0°
−45°
MRA695
Fig.15 Common emitter forward transmission coefficient (S21).
1999 Aug 23 9
Page 10
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
handbook, full pagewidth
VCE= 8 V; IC= 40 mA.
90°
135°
180°
0.5 0.4 0.3 0.2
−135°
3 GHz
40 MHz
0.1
−90°
45°
0°
−45°
MRA696
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
VCE= 8 V; IC= 40 mA.
Zo=50Ω.
90°
1
180°
135°
0
−135°
0.5
0.2
0.2 0.5 1 2 5
3 GHz
0.2
0.5
1
−90°
2
40 MHz
2
45°
5
5
−45°
MRA697
Fig.17 Common emitter output reflection coefficient (S22).
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
1999 Aug 23 10
Page 11
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
3.0
0.38
0.09
IEC JEDEC EIAJ
2.8
1.4
1.2
e
E
1.9
REFERENCES
0.95
e
1
UNIT
mm
VERSION
A
1.1
0.9
OUTLINE
SOT23
max.
1999 Aug 23 11
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 12
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23 12
Page 13
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
NOTES
1999 Aug 23 13
Page 14
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
NOTES
1999 Aug 23 14
Page 15
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
NOTES
1999 Aug 23 15
Page 16
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1999
Internet: http://www.semiconductors.philips.com
67
Printed in The Netherlands 125006/03/pp16 Date of release: 1999 Aug 23 Document order number: 9397 750 06338
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