Datasheet BFR53 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR53

NPN 2 GHz wideband transistor

Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14

1997 Oct 28

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

FEATURES

• Very low intermodulation distortion

• Very high power gain.

PINNING

PIN DESCRIPTION

1 base

page

3

2 emitter

APPLICATIONS

• Thick and thin-film circuits.

3 collector

12

Top view

Marking code: N1.

MSB003

DESCRIPTION

NPN wideband transistor in a plastic

Fig.1 SOT23.

SOT23 package.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
P
C

f

G

CBO
CEO

CM

tot
re

T

UM

collector-base voltage open emitter − 18 V
collector-emitter voltage open base − 10 V
peak collector current f > 1 MHz − 100 mA
total power dissipation Ts≤ 85 °C − 250 mW
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz;

T

=25°C

amb

transition frequency IC= 25 mA; VCE= 5 V; f = 500 MHz;

=25°C

T

j

maximum unilateral power gain IC= 30 mA; VCE= 5 V; f = 800 MHz;

T

=25°C

amb

0.9 − pF

2 − GHz

10.5 − dB

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
V
I
I
P
T
T

CBO
CEO

EBO
C
CM

tot

stg

j

collector-base voltage open emitter − 18 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
peak collector current f > 1 MHz − 100 mA
total power dissipation Ts≤ 85 °C (note 1) − 250 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1997 Oct 28 2

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure I

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 260 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=10V −−50 nA
DC current gain IC= 25 mA; VCE= 5 V; see Fig.2 25 −−

I

= 50 mA; VCE= 5 V; see Fig.2 25 −−

C

collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz;

− 0.9 − pF

see Fig.3
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.5 − pF
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz;

T

=25°C

amb

transition frequency IC= 25 mA; VCE= 5 V; f = 500 MHz;

− 0.9 − pF

− 2 − GHz

see Fig.4
maximum unilateral power gain

(note 1)

IC= 30 mA; VCE= 5 V; f = 800 MHz;

T

=25°C; see Fig.5

amb

= 2 mA; VCE= 5 V; f = 500 MHz;

C

T

=25°C; see Fig.6

amb

− 10.5 − dB

−−5dB

Note

1. G

2

S

=

is the maximum unilateral power gain, assuming S12 is zero and .

UM

GUM10 log

--------------------------------------------------------------



1S

–



21

2



1S

–



11

22

˙

dB

2

1997 Oct 28 3

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

I (mA)

C

MEA458

100

handbook, halfpage

h

FE

90

80

70

60

50

0

VCE= 5V; Tj=25°C.

50 100

Fig.2 DC current gain as a function of collector

current; typical values.

2.0

handbook, halfpage

C

c

(pF)

1.6

1.2

0.8

0.4

0

016

IE=ie= 0; f = 1 MHz; Tj=25°C.

4

812

V

Fig.3 Collector capacitance as a function of

collector-base voltage; typical values.

CB

MEA457

20

(V)

2.2

handbook, halfpage

f

T

(GHz)

1.8

1.4

1.0
0

VCE= 5 V; f = 500 MHz; Tj=25°C.

25

I (mA)

C

Fig.4 Transition frequency as a function of

collector current; typical values.

MEA459

f (MHz)

MEA455

4

10

30

handbook, halfpage

gain
(dB)

20

10

=25°C.

G

UM

I S I

12

3

2

10

0

50

IC= 30 mA; VCE= 5 V; T

2

10

amb

Fig.5 Gain as a function of frequency;

typical values.

1997 Oct 28 4

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

10

handbook, halfpage

F

(dB)

5

0

0

VCE= 5 V; f = 500 MHz; GS= 20 mS; BS is tuned; T

3010 20

Fig.6 Minimum noise figure as a function of

collector current; typical values.

MEA460

I (mA)

C

=25°C.

amb

50

handbook, halfpage

B

S

(mS)

40

−50

IC= 2 mA; VCE= 5 V; f = 500 MHz; T

3.5

0

02040 80

4.0

4.5

5.0

F = 5.5 dB3.3

amb

60

=25°C.

MEA456

G (mS)

S

100

Fig.7 Circles of constant noise figure; typical values.

1997 Oct 28 5

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; Zo=50Ω; T

1

0.5

0.2

0.5

1000 MHz

800

0.5
500

10.2 1052

300

100

1

+ j

0

– j

0.2

=25°C.

amb

2

2

Fig.8 Common emitter input reflection coefficient (S11).

5

10

∞

10

5

MEA461

handbook, full pagewidth

IC= 30 mA; VCE= 5 V; T

o

90

o

60

o

60

amb

180

=25°C.

o

150

o

25 15

o

150

120

120

o

100

300

500

5

o

1000 MHz

o

90

Fig.9 Common emitter forward transmission coefficient (S21).

o

30

o

30

MEA463

ϕ

o

0

ϕ

1997 Oct 28 6

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

o

handbook, full pagewidth

120

o

90

1000 MHz

o

60

IC= 30 mA; VCE= 5 V; T

handbook, full pagewidth

100

300

500

800

0.100.05

o

60

amb

180

=25°C.

o

150

150

o

o

o

120

o

90

Fig.10 Common emitter reverse transmission coefficient (S12).

1

0.5

2

o

30

0.15

o

30

MEA464

ϕ

o

0

ϕ

0.2

+ j

0

– j

0.2

0.5

IC= 30 mA; VCE= 5 V; Zo=50Ω; T

amb

=25°C.

Fig.11 Common emitter output reflection coefficient (S22).

1997 Oct 28 7

5

10

10.2 10520.5

300800

500

100
1000
MHz

2

1

∞

10

5

MEA462

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

PACKAGE OUTLINES

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

mm

A

1.1

0.9

OUTLINE
VERSION

SOT23

max.

1997 Oct 28 8

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 28 9

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

NOTES

1997 Oct 28 10

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFR53

NOTES

1997 Oct 28 11

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 28 Document order number: 9397 750 02896