Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR520
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Page 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
page
3
excellent reliability.
PINNING
DESCRIPTION
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
PIN DESCRIPTION
Code: N28
1 base
2 emitter
3 collector
12
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
S
21
F noise figure Γ
collector-base voltage −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−70 mA
total power dissipation up to Ts = 97 °C; note 1 −−300 mW
DC current gain IC = 20 mA; VCE = 6 V 60 120 250
feedback capacitance IC=ic= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz − 9 − GHz
maximum unilateral
power gain
2
insertion power gain IC = 20 mA; VCE = 6 V;
IC = 20 mA; VCE = 6 V;
T
= 25 °C; f = 900 MHz
amb
I
= 20 mA; VCE = 6 V;
C
T
= 25 °C; f = 2 GHz
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
s
amb
s
amb
s
amb
= Γ
= Γ
= Γ
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 20 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 5 mA; VCE= 8 V;
opt;IC
=25°C; f = 2 GHz
− 15 − dB
− 9 − dB
13 14 − dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 2
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 70 mA
total power dissipation up to Ts=97°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C
SYMBOL PARAMETER THERMAL RESISTANCE
from junction to soldering point (note 1) 260 K/W
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 3
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 26 − dBm
collector cut-off current IE = 0; VCB = 6 V −−50 nA
DC current gain IC= 20 mA; VCE = 6 V 60 120 250
emitter capacitance IC = ic= 0; VEB = 0.5 V; f = 1 MHz − 1 − pF
collector capacitance IE=ie= 0; VCB= 6 V; f = 1 MHz − 0.5 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz − 9 − GHz
maximum unilateral
power gain (note 1)
2
insertion power gain IC = 20 mA; VCE = 6 V;
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V;
T
= 25 °C; f = 900 MHz
amb
I
= 20 mA; VCE = 6 V;
C
T
= 25 °C; f = 2 GHz
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
= Γ
s
amb
= Γ
s
amb
= Γ
s
amb
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 20 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 2 GHz
IC= 20 mA; VCE=6 V;RL=50Ω;
T
=25°C; f = 900 MHz
amb
− 15 − dB
− 9 − dB
13 14 − dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 − dB
− 17 − dBm
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12 is zero and
UM
G
C
10
UM
= 20 mA; VCE=6 V;RL=50Ω;T
--------------------------------------------------------------
1S
–
fp = 900 MHz; fq= 902 MHz;
measured at f
= 898 MHz and f
(2p−q)
2
S
21
2
1S
–
11
22
amb
(2q−p)
dB.log=
2
=25°C;
= 904 MHz.
September 1995 4
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Fig.2 Power derating curve.
MRA702 - 1
o
Ts(
C)
10
MRA703
IC (mA)
250
handbook, halfpage
h
FE
200
150
100
50
0
−2
10
VCE= 6 V.
−1
10
1
Fig.3 DC current gain as a function of collector
current.
2
10
0.6
handbook, halfpage
C
re
(pF)
0.4
0.2
0
04812
iC = 0; f = 1 MHz.
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
MRA704
12
handbook, halfpage
f
T
(GHz)
8
4
0
−1
10
T
=25°C; f = 1 GHz.
amb
11010
IC (mA)
Fig.5 Transition frequency as a function of
collector current.
MRA705
VCE = 6V
VCE = 3V
2
September 1995 5
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
5
0
0102030
VCE= 6 V; f = 900 MHz.
G
UM
Fig.6 Gain as a function of collector current.
MRA706
G
IC (mA)
max
25
gain
(dB)
20
15
G
10
5
0
0102030
VCE= 6 V; f = 2 GHz.
max
G
UM
MRA707
IC (mA)
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
VCE= 6 V; Ic= 5 mA.
Fig.8 Gain as a function of frequency.
MSG
2
MRA708
G
UM
G
max
3
10
f (MHz)
4
10
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
VCE= 6 V; Ic= 20 mA.
MSG
G
UM
2
10
3
G
max
f (MHz)
MRA709
4
10
Fig.9 Gain as a function of frequency.
September 1995 6
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
handbook, halfpage
5
F
min
(dB)
4
3
2
1
0
1
VCE= 6 V.
2000 MHz
1000 MHz
900 MHz
500 MHz
f = 900 MHz
1000 MHz
G
ass
2000 MHz
F
min
10
IC (mA)
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
MRA714
20
G
ass
(dB)
15
10
5
0
−5
2
10
handbook, halfpage
5
F
min
(dB)
4
3
2
1
0
10
VCE= 6 V.
20 mA
5 mA
2
20 mAIC = 5 mA
G
ass
F
min
3
10
f (MHz)
MRA715
20
G
ass
(dB)
15
10
5
0
−5
4
10
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
Zo=50Ω.
VCE= 6 V; IC= 5 mA; f = 900 MHz.
pot. unst.
region
180°
stability
circle
135°
0
0.2
−135°
0.5
0.2
0.2 0.5 2 5
F = 3 dB
0.5
90°
F = 1.5 dB
F = 2 dB
−90°
1
F
min
1
1
Fig.12 Noise circle figure.
= 1. 1 dB
Γ
OPT
1.0
45°
2
5
5
2
−45°
MRA716
0.8
0.6
0.4
0.2
0°
0
1.0
September 1995 7
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
handbook, full pagewidth
Zo=50Ω.
VCE= 6 V; IC= 5 mA; f = 2000 MHz.
180°
G
0
max
−135°
135°
0.2
= 9.3 dB
0.2
90°
0.5
F = 2 dB
F
= 1. 9 dB
min
Γ
MS
G = 9 dB
G = 8 dB
0.5
Γ
OPT
0.5 1 2 5
G = 7 dB
−90°
Fig.13 Noise circle figure.
1
F = 3 dB
F = 2.5 dB
1
1.0
45°
2
5
5
2
−45°
MRA717
0.8
0.6
0.4
0.2
0°
0
1.0
September 1995 8
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
handbook, full pagewidth
VCE= 6 V; IC= 20 mA.
Zo=50Ω.
90°
1
180°
135°
0.2
0
0.2
−135°
0.5
3 GHz
0.2 0.5 1 2 5
0.5
1
−90°
2
40 MHz
2
45°
−45°
Fig.14 Common emitter input reflection coefficient (S11).
5
5
MRA710
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
handbook, full pagewidth
VCE= 6 V; IC= 20 mA.
90°
135°
45°
40 MHz
−90°
3 GHz
0°
−45°
MRA711
180°
50 40 30 20 10
−135°
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995 9
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
handbook, full pagewidth
VCE= 6 V; IC= 20 mA.
90°
135°
45°
3 GHz
180°
0.5 0.4 0.3 0.2 0.1
−135°
40 MHz
−45°
−90°
0°
MRA712
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
VCE= 6 V; IC= 20 mA.
Zo=50Ω.
90°
1
180°
135°
0.2
0
0.5
0.2 0.5 1 2 5
45°
2
5
40 MHz
0.2
−135°
0.5
3 GHz
2
1
−90°
5
−45°
MRA713
Fig.17 Common emitter output reflection coefficient (S22).
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
September 1995 10
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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
0.09
3.0
2.8
0.38
IEC JEDEC EIAJ
e
E
1.4
1.9
1.2
REFERENCES
0.95
e
1
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
max.
September 1995 11
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 12
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995 12
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