
BFR360F
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360F FBs
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
98°C
T
S
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
1 = B 2 = E 3 = C
CEO
CES
CBO
EBO
C
B
P
tot
st
210 mW
150 °C
-65 ... 150
-65 ... 150
6 V
15
15
2
35 mA
4
TSFP-3
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
1
250
Jun-16-2003
K/W

BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 15 mA, VCE = 3 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
6 9 - V
- - 10 µA
- - 100 nA
- - 1 µA
60 130 200 -
2
Jun-16-2003

BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
IC = 3 mA, VCE = 3 V, ZS = Z
Sopt
,
f = 1.8 GHz
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 1.8 GHz
Lopt
IC = 15 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 3 GHz
Lopt
Sopt
Sopt
,
,
f
C
C
C
F
G
T
min
cb
ce
eb
ma
11 14 - GHz
- 0.32 0.5 pF
- 0.2 -
- 0.4 -
- 1 - dB
-
-
15.5
11
-
-
Transducer gain
= 15 mA, VCE = 3 V, ZS = ZL = 50 ,
I
C
|S
21e
2
|
f = 1.8 GHz
I
= 15 mA, VCE = 3 V, ZS = ZL = 50 ,
C
f = 3 GHz
Third order intercept point at output2)
IP
3
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS = Z
= 50 ,
L
P
-1dB
f = 1.8 GHz
1
G
= |S
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
21e
/ S
| (k-(k²-1)
12e
1/2
)
-
-
13
9
dB
-
-
- 24 - dBm
- 9 -
3
Jun-16-2003

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
BFR360F
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF = 1 -
All parameters are ready to use, no scalling is necessary.
0.0689 fA
20 V
2.4
-
60 V
1.4 -
7.31
400 fF
9.219 ps
1.336 mA
0.864 V
1.92 ns
00
-
BF = 147
IKF = 77.28
BR = 6
IKR = 0.3
RB = 0.1
RE = 78.2 m
VJE = 1.3
XTF = 0.115 PTF = 0
MJC = 0.486 CJS = 0
XTB = 0.5
FC = 0.954
KF = 1E-14 -
mA
A
V
deg
fF
K
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
NK =
1150 fA
120 fA
75 µA
0.35
0.5 -
0.198 V
473 fF
0.129 -
0.75 V
1.11 eV
0.5 K
Package Equivalent Circuit:
L
=
C
4
C
1
L
2
B
B’
Transistor
Chip
C’
L
3
C
E’
C
6
C
2
C
3
L
1
C
5
1
L
=
2
L
=
3
C
=
1
C
=
2
C
=
3
C
=
4
C
=
5
C
=
Valid up to 6GHz
0.556
0.657
0.381
43
123
66
10
36
47
nH
nH
nH
fF
fF
fF
fF
fF
fF
4
EHA07524
Jun-16-2003
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes

BFR360F
Total power dissipation P
240
mW
180
tot
150
P
120
90
60
30
0
0 15 30 45 60 75 90 105 120
= (TS)
tot
°C
Permissible Pulse Load R
3
10
K/W
thJS
R
2
10
thJS
= (tp)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
1
10
-7
-6
-5
-4
-3
150
T
S
10
10
10
10
10
10
-2
0
s
10
t
p
Permissible Pulse Load
P
totmax/PtotDC
1
10
totDC
/P
totmax
P
0
10
-7
10
10
-6
= (tp)
-5
10
10
-4
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
10
Collector-base capacitance C
= (VCB)
cb
f = 1MHz
0.8
pF
0.6
cb
0.5
C
0.4
0.3
0.2
0.1
-2
0
s
10
t
p
0
0 2 4 6 8 10 12
V
16
V
CB
5
Jun-16-2003

BFR360F
Third order Intercept Point IP
(Output, Z
V
= parameter, f = 1.8GHz
CE
30
dBm
20
3
IP
15
10
5
0
-5
0 5 10 15 20 25 30
S=ZL
=50)
6V
4V
3V
2V
1V
=(IC)
3
mA
Transition frequency f
= (IC)
T
f = 1GHz
V
= parameter
CE
17
GHz
14
5V
12
T
f
10
8
6
4
2
40
I
C
0
0 5 10 15 20 25 30
mA
I
C
3V
2V
1V
0.7V
40
Power gain G
f = 0.9GHz
V
= parameter
CE
24
dB
22
21
20
G
19
18
17
16
15
14
13
12
0 5 10 15 20 25 30
, Gms = (IC)
ma
mA
I
C
5V
3V
2V
1V
0.7V
40
Power gain G
f = 1.8GHz
V
= parameter
CE
18
dB
14
G
12
10
8
0 5 10 15 20 25 30
, Gms = (IC)
ma
mA
I
C
5V
3V
2V
1V
0.7V
40
6
Jun-16-2003

BFR360F
Noise figure NF =
V
= 3V, f = 1,8 GHz
CE
3
dB
2.4
2.2
2
1.8
F
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 5 10 15 20 25 30 35
(IC)
F50
NFmin
mA
I
Source impedance for min.
noise figure vs. frequency
V
= 3 V
CE
+j50
+j25
+j10
2.4GHz
0
45
C
10
-j10
25
4GHz
-j25
3GHz
50
-j50
1.8GHz
100
+j100
0.9GHz
3mA
15mA
-j100
8
Jun-16-2003

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