Page 1
NPN Silicon RFTransistor
1
2
3
Preliminary data
Low voltage/ low current operation
Transistor frequency of 14 GHz
High insertion gain
Ideal for low current amplifiers and oscillators
ESD: Electrostatic discharge sensitive device, observe handling precaution!
BFR340F
Type Marking Pin Configuration Package
BFR340F FAs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
T
118°C
S
Junction temperature T
Ambient temperature T
Storage temperature T
Symbol Value Unit
6 V
17
2
10 mA
2
60 mW
150 °C
-65 ... 150
-65 ... 150
C
B
P
CEO
CBO
EBO
tot
j
A
stg
Thermal Resistance
Junction - soldering point
2)
R
thJS
530
K/W
1
T
is measured on the collector lead at the soldering point to the pcb.
S
2
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Aug-23-20011
Page 2
BFR340F
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-base cutoff current
V
= 5 V, IE = 0
CB
Emitter-base cutoff current
V
= 1 V, IC = 0
EB
DC current gain
I
= 5 mA, VCE = 2 V
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
6 9 - V
- - 100 nA
- - 1 µA
70 100 200
-
Aug-23-20012
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR340F
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
= 6 mA, VCE = 3 V, f = 1 GHz
C
Collector-base capacitance
V
= 5 V, 1 MHz, emitter grounded
CB
Collector-emitter capacitance
V
= 5 V, 1 MHz, base grounded
CE
Emitter-base capacitance
V
= 0.5 V, 1 MHz, collector grounded
EB
Noise figure
= 3 V, IC = 1 mA, f = 1.8 GHz,
V
CE
Z
= Z
S
Sopt
Power gain1)
V
= 3 V, IC = 5 mA, f=1,8GHz, ZS=Z
CE
V
= 3 V, IC = 5 mA, f=3GHz, ZS=Z
CE
Sopt
Sopt
, ZL=Z
, ZL=Z
Lopt
Lopt
Insertion power gain
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
min
G
ms
G
ma
|S21|
2
12 14 - GHz
- 0.21 0.4 pF
- 0.17 -
- 0.11 -
- 1.15 - dB
-
-
16
12
-
-
V
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
CE
V
= 3 V, IC = 5 mA, f= 3GHz, ZS = Z
CE
Sopt
Third order intercept point at output2)
V
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
CE
1 dB Compression point at output3)
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
V
CE
1
= |
G
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
3
DC current at no input power
/
S
21
| (k-(k2-1)
S
12
1/2
);
= |
G
ms
/
S
21
= 50
Sopt
= 50
OIP
= 50
= 50
P
-1dB
Sopt
Sopt
|
S
12
from 0.1 MHz to 6 GHz
3
-
-
13
9.5
-
-
- 12 - dBm
- 0 -
Aug-23-20013
Page 4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFR340F
IS = 6.12 fA
VAF = 42.228 V
NE = 2.4753
-
VAR = 16.777 V
NC = 0.8956
RBM = 0.2403
-
CJE = 182 fF
TF = 10.3 ps
ITF = 0.0017 mA
VJC = 0.5487 V
TR = 2.71 ns
MJS = 0
XTI = 0
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
-
-
BF = 98.48
IKF = 103 mA
BR = 19.61
IKR = 0.834 A
RB = 59.99
RE = 3.677
VJE = 0.626 V
XTF = 0
PTF = 0 deg
MJC = 0.319
CJS = 0fF
NK = 0.5
FC = 0.735
-
-
-
-
-
-
NF = 0.4213
-
ISE = 11.768 nA
NR = 0.3253
-
ISC = 3.632 nA
IRB = 0.01 mA
RC = 5.2493
MJE = 0.4172
-
VTF = 0.262 V
CJC = 222.63 fF
XCJC = 0.3904
-
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
Package Equivalent Circuit:
C
4
C
1
L
B
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
2
C
6
B’
C
Transistor
Chip
E’
2
E
C’
C
3
L
1
L
3
C
5
EHA07524
L1 = 0.556 nH
L
= 0.657 nH
2
L
= 0.381 nH
3
C
= 43 fF
C
1
C
= 123 fF
2
C
= 66 fF
3
C
= 10
4
C
=
5
C
=
6
Valid up to 6GHz
36 fF
47 fF
fF
Aug-23-20014
Page 5
BFR340F
Total power dissipation P
80
mW
60
tot
50
P
40
30
20
10
= f (TS)
tot
Transition frequency f
f = 1GHz
V
= Parameter
CE
16
GHz
12
10
T
f
8
6
4
2
= f (IC)
T
8V
5V
3V
2V
1V
0.75V
0
0 15 30 45 60 75 90 105 120
Permissible Pulse Load R
3
10
thJS
R
K/W
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
thJS
°C
T
= f (tp)
150
0
0 2 4 6 8
S
mA
12
I
C
Permissible Pulse Load
P
totmax/PtotDC
1
10
totDC
/P
tot_max
P
= f (tp)
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
Aug-23-20015
Page 6
BFR340F
Collector-base capacitance C
f = 1MHz
0.4
pF
0.3
0.25
Ccb
0.2
0.15
0.1
0.05
= f (VCB)
cb
Intermodulation Intercept Point IP
(3rd order, Output, ZS=ZL=50)
= Parameter, f = 1.8GHz
V
CE
20
dBm
12
3
8
IP
4
0
-4
-8
6V
4V
3V
2V
1V
=f(IC)
3
0
0 2 4 6 8 10 12
Power Gain G
f = 0.9GHz
= Parameter
V
CE
22
dB
20
19
18
G
17
16
15
14
13
, Gms = f(IC)
ma
V
5V
3V
2V
1V
0.75V
VCB
16
-12
0 2 4 6 8
Power Gain G
f = 1.8GHz
= Parameter
V
CE
20
mA
16
G
14
12
10
, Gms = f(IC)
ma
mA
I
C
5V
3V
2V
1V
0.75V
12
12
11
10
0 2 4 6 8 10
mA
8
6
14
I
C
0 2 4 6 8
mA
12
I
C
Aug-23-20016
Page 7
BFR340F
Power gain G
V
= 2V
CE
f = Parameter
22
dB
18
16
G
14
12
10
8
6
, Gms = f (IC)
ma
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Power Gain G
, Gms = f(VCE):_____
ma
|S21|2 = f(VCE):--------f = Parameter
22
Ic = 5mA
dB
20
19
18
G
17
16
15
14
13
12
11
0.9GHz
0.9GHz
1.8GHz
1.8GHz
4
0 2 4 6 8 10
Power Gain G
V
= Parameter
CE
45
Ic=5mA
dB
35
30
G
25
20
15
10
, Gms = f(f)
ma
5V
3V
2V
1V
0.75V
mA
10
14
I
C
Ppower gain |S
V
G
0 1 2 3 4 5 6
|2 = f ( f )
21
= Parameter
CE
24
20
18
16
14
12
10
8
6
Ic=5mA
5V
3V
2V
1V
0.75V
dB
V
8
V
CE
5
0 0.5 1 1.5 2 2.5 3
GHz
4
f
4
0 0.5 1 1.5 2 2.5 3
GHz
4
f
Aug-23-20017
Page 8
BFR340F
Noise figure NF = f ( f )
V
= 3V, f = 1.8GHz
CE
6
GHz
5
4.5
4
F
3.5
3
2.5
2
1.5
1
0.5
F50
NFmin
Source impedance for min.
noise figure vs. Frequency
V
= 3 V
CE
+j50
+j25
+j10
0
-j10
10
-j25
25
3GHz
4GHz
50
5mA
1mA
-j50
+j100
2.4GHz
1.8GHz
0.9GHz
100
-j100
0
0 2 4 6 8
mA
12
I
C
Aug-23-20018
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