Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR30; BFR31
N-channel field-effect transistors
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
Page 2
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
• Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 d drain
2 s source
(1)
(1)
3 g gate
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
handbook, halfpage
12
Top view
Marking codes:
BFR30: M1p.
BFR31: M2p.
3
g
MAM385
d
s
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
P
I
DSS
DS
GSO
tot
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
total power dissipation T
≤ 40 °C − 250 mW
amb
drain current VGS= 0; VDS=10V
BFR30 4 10 mA
BFR31 1 5 mA
y
common-source transfer admittance ID= 1 mA; VDS= 10 V; f = 1 kHz
fs
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 2
Page 3
Philips Semiconductors Product specification
N-channel field-effect transistors
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGO
V
GSO
I
D
I
G
P
tot
T
stg
T
j
drain-source voltage −±25 V
drain-gate voltage open source −−25 V
gate-source voltage open drain −−25 V
drain current − 10 mA
forward gate current (DC) − 5mA
total power dissipation T
≤ 40 °C; note 1; see Fig.2 − 250 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 430 K/W
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
T
amb
MDA245
(°C)
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40 200
80 120 160
Fig.2 Power derating curve.
1997 Dec 05 3
Page 4
Philips Semiconductors Product specification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
GSS
I
DSS
gate cut-off current VDS= 0; VGS= −10 V −−0.2 nA
drain current VGS= 0; VDS=10V
BFR30 4 10 mA
BFR31 1 5 mA
V
GS
gate-source voltage ID= 1 mA; VDS=10V
BFR30 −0.7 −3V
BFR31 0 −1.3 V
V
GS
gate-source voltage ID=50µA; VDS=10V
BFR30 −−4V
BFR31 −−2V
V
GSoff
gate-source cut-off voltage ID= 0.5 nA; VDS=10V
BFR30 −−5V
BFR31 −−2.5 V
y
common-source transfer admittance ID= 1 mA; VDS= 10 V; f = 1 kHz;
fs
T
=25°C
BFR30 1 4 mS
amb
BFR31 1.5 4.5 mS
y
common-source transfer admittance ID= 200 µA; VDS= 10 V; f = 1 kHz;
fs
T
=25°C
BFR30 0.5 − mS
amb
BFR31 0.75 − mS
y
common source output admittance ID= 1 mA; VDS= 10 V; f = 1 kHz
os
BFR30 − 40 µS
BFR31 − 25 µS
y
common source output admittance ID= 200 µA; VDS= 10 V; f = 1 kHz
os
BFR30 − 20 µS
BFR31 − 15 µS
C
is
C
rs
V
n
input capacitance VDS=10V; f=1MHz
I
=1mA − 4pF
D
I
= 0.2 nA − 4pF
D
feedback capacitance VDS= 10 V; f = 1 MHz; T
I
=1mA − 1.5 pF
D
I
= 200 µA − 1.5 pF
D
equivalent input noise voltage ID= 200 µA; VDS=10V;
amb
=25°C
− 0.5 µV
B = 0.6 to 100 Hz
1997 Dec 05 4
Page 5
Philips Semiconductors Product specification
N-channel field-effect transistors
−1
MDA657
VGS (V)
10
handbook, halfpage
I
D
(mA)
8
6
4
2
0
−4
BFR30.
VDS= 10V; Tj=25°C.
max
typ
min
−3 −20
10
handbook, halfpage
I
D
(mA)
8
6
4
2
0
010
BFR30.
Tj=25°C.
BFR30; BFR31
MDA658
V
= 0 V
GS
−0.5
−1.0
−1.5
−2.0
2468
VDS (V)
handbook, halfpage
5
I
D
(mA)
4
3
2
1
0
−50
BFR31.
VDS= 10 V; Tj=25°C.
Fig.3 Input characteristics.
MDA659
max
typ
min
−4−3−2−1
VGS (V)
Fig.4 Output characteristics; typical values.
handbook, halfpage
5
I
D
(mA)
4
3
2
1
0
010
BFR31.
Tj=25°C.
MDA660
V
= 0 V
GS
−0.2
−0.4
−0.6
−0.8
−1
−1.2
2468
VDS (V)
Fig.5 Input characteristics.
1997 Dec 05 5
Fig.6 Output characteristics; typical values.
Page 6
Philips Semiconductors Product specification
N-channel field-effect transistors
100
V
GS
MDA661
= 0 V
−0.5
−1.0
−1.5
−2.0
Tj (°C)
handbook, halfpage
6
I
D
(mA)
4
2
0
25 50 75 125
BFR30.
VDS=10V.
6
handbook, halfpage
I
D
(mA)
4
2
0
25 50 75 125
BFR31.
VDS=10V.
V
−0.2
−0.4
−0.6
−0.8
−1.2
GS
0 V
−1
BFR30; BFR31
MDA662
=
100
Tj (°C)
Fig.7 Drain current as a function of junction
temperature; typical values.
10
handbook, halfpage
I
GSS
(nA)
1
−1
10
−2
10
−3
10
0 150
MDA656
Tj (°C)
Fig.8 Drain current as a function of junction
temperature; typical values.
−6
handbook, halfpage
V
GS(off)
(V)
−4
−2
BFR30
BFR31
20010050
0
010
2
468
MDA663
I
(mA)
DSS
VGS= −10 V; VDS=0.
Fig.9 Gatecut-of f current as a function of junction
temperature; typical values.
1997 Dec 05 6
ID= 0.5 nA; VDS= 10 V; VGS= 0; Tj=25°C.
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
Page 7
Philips Semiconductors Product specification
N-channel field-effect transistors
7.5
handbook, halfpage
y
fs
(mA/V)
5
2.5
0
0
VDS= 10 V; f = 1 kHz; T
2
amb
BFR31
BFR30
46
=25°C.
MDA664
ID (mA)
75
handbook, halfpage
y
os
(µA/V)
50
25
0
0
VDS= 10 V; f = 1 kHz; T
2
amb
=25°C.
BFR30; BFR31
MDA665
BFR30
BFR31
46
ID (mA)
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
4
10
handbook, halfpage
|yos|
(µA/V)
3
10
2
10
10
01020
f = 1 kHz; T
(1) ID= 4 mA. (2) ID= 1 mA.
amb
(1)
(2)
=25°C.
MDA666
BFR30
BFR31
V
(V)
DS
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
Fig.12 Common source output admittance as a
function of drain current; typical values.
−4
VGS (V)
MDA667
handbook, halfpage
30
5
C
is
(pF)
4
3
2
1
0
VDS= 10 V; f = 1 MHz; T
−1 −2 −3
0 −5
=25°C.
amb
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
1997 Dec 05 7
Page 8
Philips Semiconductors Product specification
N-channel field-effect transistors
−4
MDA668
VGS (V)
−1
handbook, halfpage
C
rs
(pF)
−0.8
−0.6
−0.4
−0.2
0
0 −5
VDS= 10 V; f = 1 MHz; T
−1 −2 −3
=25°C.
amb
BFR30; BFR31
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
4
10
handbook, full pagewidth
e
n
(nV/ Hz)
3
10
2
10
10
1
10 10
VDS= 10 V; T
(1) BFR31; ID= 1 mA.
(2) BFR30; ID= 4 mA.
amb
=25°C.
2
MDA669
(1)
(2)
3
10
4
10
5
10
f (Hz)
6
10
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
1997 Dec 05 8
Page 9
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
4
10
handbook, full pagewidth
i
n
(fA/ Hz)
3
10
2
10
10
1
10 10
VDS= 10 V; T
amb
(1) BFR31; ID= 1 mA.
(2) BFR30; ID= 4 mA.
2
3
10
4
10
5
10
=25°C.
Fig.17 Equivalent noise current source as a function of frequency; typical values.
(1)
(2)
f (Hz)
MDA670
6
10
1997 Dec 05 9
Page 10
Philips Semiconductors Product specification
N-channel field-effect transistors
BFR30; BFR31
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
max.
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1997 Dec 05 10
Page 11
Philips Semiconductors Product specification
N-channel field-effect transistors
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BFR30; BFR31
1997 Dec 05 11
Page 12
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© Philips Electronics N.V. 1997 SCA56
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 117067/00/02/pp12 Date of release: 1997 Dec 05 Document order number: 9397 75003154
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