Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
D
Low noise figure
D
High transition frequency fT = 8 GHz
D
Excellent large-signal behaviour
BFR193T/BFR193TW
Vishay Telefunken
1
94 9280
23
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
1
13 652
2
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 45 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 570
20 V
12 V
2 V
80 mA
420 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35mm Cu
Document Number
Rev. 2, 14-Feb-00
R
thJA
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250 K/W
1 (4)
Page 2
BFR193T/BFR193TW
Noise figure
F
Power gain
G
Transducer gain
|S
2
|
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector-emitter cut-off current VCE = 20 V, VEB = 0 I
Collector-base cut-off current VCB = 10 V I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 8 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 8 V, IC = 50 mA, f = 1 GHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Third order intercept point
at output
ZS = Z
VCE = 8 V, IC = 10 mA
ZS = Z
VCE = 8 V, IC = 10 mA
ZS = Z
V
= 8 V, IC = 30 mA
CE
ZS = Z
VCE = 8 V, IC = 30 mA
ZO=50W, f = 900 MHz,
VCE = 8 V, IC = 30 mA
ZO=50W, f = 2 GHz,
V
= 8 V, IC = 30 mA
CE
f = 900 MHz, VCE = 8 V, IC = 50 mA IP
=50W, f = 900 MHz,
Sopt,ZL
=50W, f = 2 GHz,
Sopt,ZL
=50W, f = 900 MHz,
Sopt,ZL
=50W, f = 2 GHz,
Sopt,ZL
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
pe
21e
3
100mA
100 nA
1
m
A
12 V
0.1 0.5 V
50 100 150
6 8 GHz
0.6 1.0 pF
0.25 pF
1.6 pF
1.2 dB
2.1 dB
15 dB
9 dB
13 dB
7 dB
34 dBm
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Document Number
Rev. 2, 14-Feb-00
Page 3
Dimensions of BFR193T in mm
BFR193T/BFR193TW
Vishay Telefunken
95 11346
Dimensions of BFR193TW in mm
96 12236
Document Number
Rev. 2, 14-Feb-00
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3 (4)
Page 4
BFR193T/BFR193TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4 (4)
Document Number
Rev. 2, 14-Feb-00
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