Datasheet BFR183W Datasheet (Siemens)

BFR 183W

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA

•

f

= 8 GHz

T

F = 1.2 dB at 900 MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFR 183W RHs Q62702-F1493 1 = B 2 = E 3 = C SOT-323

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 56 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

12 V 20 20

2

65 mA

5

mW 450 150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

210 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Dec-11-1996

BFR 183W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 20 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 1 V,

EB

I

C

= 0

DC current gain

I

= 15 mA,

C

V

CE

= 8 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

12 - -

µA

- - 100 nA

- - 100 µA

- - 1

-

50 100 200

Semiconductor Group 2 Dec-11-1996

BFR 183W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 25 mA,

C

V

= 8 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 5 mA,

C

f

= 900 MHz

V

CE

= 8 V,

Z

=

Z

S

Sopt

f

C

F

T

GHz

6 8 -

cb

pF

- 0.46 0.7

ce

- 0.24 -

eb

- 1 dB

-

1.2

-

f

= 1.8 GHz

V

2)

CE

Power gain

I

= 15 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 15 mA,

C

f

= 900 MHz

f

= 1.8 GHz

2)

G

= |

ma

S

21

V

/

CE

S

= 8 V,

| (k-(k2-1)

12

-

G

ma

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

S

L

= 50

Ω

-

1/2

)

2

18

11.5

15 9

-

Semiconductor Group 3 Dec-11-1996

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :

Transistor Chip Data

BFR 183W

IS = 1.0345 fA VAF = 14.772 V NE = 1.2149 VAR = 3.4276 V NC = 0.85331 RBM = 2.5426

Ω

CJE = 23.077 fF TF = 22.746 ps ITF = 1.8773 mA VJC = 1.1967 V TR = 1.0553 ns MJS = 0XTI = 3-

BF = 115.98 IKF = 0.14562 A BR = 10.016 IKR = 0.013483 A RB = 1.0112 RE = 1.3435 VJE = 1.0792 V XTF = 0.36823 PTF = 0 deg MJC = 0.3 CJS = 0 fF XTB = 0 FC = 0.54852 -

Ω Ω

NF = 0.80799 ISE = 16.818 fA NR = 0.99543 ISC = 1.3559 fA IRB = 0.43801 mA RC = 0.20486

Ω

MJE = 0.45354 VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 VJS = 0.75 V EG = 1.11 eV TNOM 300 K

Package Equivalent Circuit:

LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0nH LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF

Valid up to 6 GHz

For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 4 Dec-11-1996

BFR 183W

Total power dissipation

* Package mounted on epoxy

500

mW

400

P

tot

350

300

250

200

150

100

50

P

= f (

T

*,

T

tot

T

S

T

A

)

S

0

0 20 40 60 80 100 120 °C 150

Permissible Pulse Load

3

10

K/W

R

thJS

2

10

1

10

0

10

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005 D = 0

= f (

t

TA,T

)

p

S

Permissible Pulse Load

P

totmax

/

P

totDC

= f (

t

)

p

2

10

P

/

P

totmax

totDC

- D = 0

0.005

0.01

0.2

10

1

0.05

0.1

0.2

0.5

10

-1

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

t

p

0

10

s

10

0

10

-7

-6

-5

-4

-3

-2

-1

10

t

0

10

s

p

Semiconductor Group 5 Dec-11-1996

BFR 183W

Collector-base capacitance

V

=

v

BE

C

cb

= 0, f = 1MHz

be

1.1

pF

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0 0 4 8 12 16 V 22

C

cb

= f (

V

)

CB

V

R

Transition frequency

V

= Parameter

CE

10

GHz

8

f

T

7

6

5

4

3

2

1 0

0 5 10 15 20 25 30 35 mA 45

f

T

= f (

I

)

C

10V

5V

3V

2V

1V

0.7V

I

C

Power Gain

f

= 0.9GHz

V

= Parameter

CE

20

dB

18 17

G 10V

16 15 14 13 12 11 10

9 8 7 6

5

G

,

G

= f(

I

ma

ms

0 5 10 15 20 25 30 35 mA 45

)

C

3V

2V

1V

0.7V

I

Power Gain

f

= 1.8GHz

V

= Parameter

CE

13

dB

11

G

10

9 8 7 6 5 4 3 2 1 0

-1

C

0 5 10 15 20 25 30 35 mA 45

G

ma

,

G

ms

= f(

I

)

C

10V

3V

2V

1V

0.7V

I

C

Semiconductor Group

6 Dec-11-1996

BFR 183W

Power Gain

G

ma

|

f

= Parameter

19

I

=15mA

C

dB

17 16

G

15 14 13 12 11 10

9 8 7 6 5

4

0 2 4 6 8 10 V 13

,

G

= f(

V

S

ms

21

|2 = f(

CE

V

CE

):_____

):---------

0.9GHz

1.8GHz

V

CE

Intermodulation Intercept Point

(3rd order, Output,

V

= Parameter, f = 900MHz

CE

30

dBm

IP

3

20

15

10

5

0 5 10 15 20 25 30 mA 40

ZS

=

Z

L

1V

=50Ω)

3V

2V

IP

3

=f(

8V

5V

I

C

I

)

C

Power Gain

V

= Parameter

CE

35

I

=15mA

C

dB

G

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

G

ma

,

G

ms

= f(f)

10V

1V

0.7V

f

Power Gain |

V

= Parameter

CE

30

I

=15mA

C

dB

S

21

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

S

|2= f(f)

21

10V

1V

0.7V

f

Semiconductor Group

7 Dec-11-1996