Datasheet BFR182TW, BFR182T Datasheet (Vishay Telefunken)

Page 1
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Features
D
Low noise figure
D
High power gain
BFR182T/BFR182TW
Vishay Telefunken
1
94 9280
23
BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
13 581
1
13 652
2
BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter
3
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V Collector current I Base current I Total power dissipation T Junction temperature T Storage temperature range T
60 °C P
amb
CBO CEO EBO
C B tot
j
stg
13 570
15 V 10 V
2 V
35 mA
5 mA 200 mW 150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85025 Rev. 2, 20-Jan-99
3
R
thJA
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450 K/W
1 (4)
Page 2
BFR182T/BFR182TW
qy
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 15 V, VBE = 0 I Collector-base cut-off current VCB = 10 V, IE = 0 I Emitter-base cut-off current VEB = 1 V, IC = 0 I Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA V DC forward current transfer ratio VCE = 6 V, IC = 5 mA h
VCE = 8 V, IC = 20 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 6 V, IC = 5 mA, f = 500 MHz f
VCE = 8 V, IC = 20 mA, f = 500 MHz f Collector-base capacitance VCB = 10 V, f = 1 MHz C Collector-emitter capacitance VCE = 10 V, f = 1 MHz C Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C Noise figure VCE = 6 V, IC = 5 mA, ZS = Z
f = 900 MHz
VCE = 6 V, IC = 5 mA, ZS = Z
f = 1.75 GHz Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W,
ZL = Z
, f = 900 MHz
Lopt
VCE = 8 V, IC = 20 mA, ZS = 50 W,
Z
= Z
L
, f = 1.75 GHz
Lopt
Transducer gain VCE = 8 V, IC = 20 mA, f = 900 MHz,
Z0 = 50
W
Sopt
Sopt
,
,
G
G
S
CES CBO EBO
(BR)CEO
CEsat
FE FE
T T cb ce eb
10 V
50 90
5.5 GHz
7.5 GHz
0.3 pF
0.2 pF
0.65 pF
100mA 100 nA
1
0.1 0.4 V
100
F 1.5 dB
F 2.0 dB
pe
pe
21e
2
15 dB
11 dB
14 dB
m
A
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Document Number 85025
Rev. 2, 20-Jan-99
Page 3
Dimensions of BFR182T in mm
BFR182T/BFR182TW
Vishay Telefunken
95 11346
Dimensions of BFR182TW in mm
96 12236
Document Number 85025 Rev. 2, 20-Jan-99
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3 (4)
Page 4
BFR182T/BFR182TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85025
Rev. 2, 20-Jan-99
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