RB =9.9037
RE =2.1372
VJE =0.73155V
XTF =0.33814-
PTF =0deg
MJC =0.30013-
CJS =0fF
XTB =0-
FC =0.99768-
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF =0.90617-
ISE =12.603fA
NR =0.87757-
ISC =0.01195fA
IRB =0.69278mA
RC =2.2171
MJE =0.43619-
VTF =0.12571V
CJC =319.69fF
XCJC =0.082903-
VJS =0.75V
EG =1.11eV
TNOM300K
Package Equivalent Circuit:
L1 = 0.762nH
C
4
C
1
L
B
2
C
6
B’
C
Transistor
Chip
E’
2
E
C’
C
3
L
1
L
3
C
C
5
EHA07524
L
= 0.706nH
2
= 0.382nH
L
3
= 62fF
C
1
= 84fF
C
2
= 180fF
C
3
= 7
C
4
C
C
5
6
=
=
40
48
fF
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
Aug-09-20014
Page 5
BFR181T
Total power dissipation P
200
mW
160
140
tot
P
120
100
80
60
40
20
= f (TS)
tot
0
020406080100120
Permissible Pulse Load R
3
10
thJS
R
2
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
thJS
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
/ P
totmax
P
1
10
= f (tp)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
Aug-09-20015
Page 6
BFR181T
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.4
pF
0.3
cb
0.25
C
0.2
0.15
0.1
0.05
Transition frequencyfT = f (IC)
VCE = Parameter
9
GHz
7
6
T
f
5
4
3
2
1
10V
8V
5V
3V
2V
1V
0.7V
0
051015
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
= Parameter
V
CE
22
dB
16
G
13
10
V
25
V
CB
0
0510
mA
20
I
C
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
= Parameter
V
CE
15
10V
5V
3V
2V
1V
G
dB
ma
9
6
3
10V
5V
3V
2V
1V
0.7
7
04812
mA
0.7V
I
C
20
0
04812
mA
20
I
C
Aug-09-20016
Page 7
BFR181T
Power GainGma, Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
22
IC=5mA
dB
0.9GHz
18
16
G
14
12
10
8
0.9GHz
1.8GHz
1.8GHz
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
= Parameter, f = 900MHz
V
CE
dBm
3
IP
22
14
2V
10
1V
6
2
8V
5V
3V
6
036
Power Gain Gma, Gms = f(f)
V
= Parameter
CE
45
IC=5mA
dB
35
30
G
25
20
15
10
5
V
12
V
CE
-2
0510
mA
20
I
C
Power Gain |S21|2= f(f)
VCE = Parameter
25
IC=5mA
dBm
15
21
S
10
10V
5V
1V
5
0
10V
5V
1V
0
012345
GHz
-5
7
012345
f
GHz
7
f
Aug-09-20017
Page 8
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