Datasheet BFR181T Datasheet (Infineon) [ru]

Page 1
NPN Silicon RF Transistor
g
Preliminary data
BFR181T
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR181T RFs 1 = B 2 = E 3 = C SC75
Maximum Ratings Parameter
Symbol Value Unit
2
Collector-emitter voltage V Collector-emitter voltage V Collector-base voltage V Emitter-base voltage V Collector current I Base current I
Total power dissipation
T
S
79°C
1)
Junction temperature T Ambient temperature T Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
P
R
CEO CES CBO
EBO
C B
tot
j A st
thJS
12 V 20 20
2
20 mA
2
175 mW
150 °C
-65 ... 150
-65 ... 150
405
K/W
Aug-09-20011
Page 2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR181T
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200 -
Aug-09-20012
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR181T
Parameter
AC characteristics (verified by random sampling)
Transition frequency
I
= 10 mA, VCE = 8 V, f = 500 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
= 2 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 900 MHz f = 1.8 GHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
6 8 - GHz
- 0.26 0.4 pF
- 0.17 -
- 0.3 -
-
-
1.45
1.8
dB
-
-
Power gain, maximum stable 1)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 900 MHz Power gain, maximum available 2)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 1.8 GHz
Transducer gain
I
= 5 mA, VCE = 8 V, ZS = ZL = 50 ,
C
f = 900 MHz f = 1.8 GHz
1
G
= |S21 / S12|
ms
2
G
= |S21 / S12| (k-(k2-1)
ma
1/2
)
Lopt
Lopt
,
,
G
G
|S
ms
ma
21e
- 19.5 -
- 13.5 -
2
|
-
-
15.5
10.5
-
-
Aug-09-20013
Page 4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFR181T
IS = VAF = 22.403 V NE = 1.7631 - VAR = 5.1127 V
NC = 1.6528 - RBM = 6.6315 CJE = 1.8168 fF TF = 17.028 ps ITF = 1.0549 mA VJC = 1.1633 V TR = 2.7449 ns MJS = 0- XTI = 3 -
0.0010519 fA
BF = 96.461 - IKF = 0.12146 A BR = 16.504 - IKR = 0.24951 A
RB = 9.9037 RE = 2.1372 VJE = 0.73155 V XTF = 0.33814 - PTF = 0 deg MJC = 0.30013 - CJS = 0fF XTB = 0- FC = 0.99768 -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
NF = 0.90617 - ISE = 12.603 fA NR = 0.87757 - ISC = 0.01195 fA
IRB = 0.69278 mA RC = 2.2171
MJE = 0.43619 - VTF = 0.12571 V CJC = 319.69 fF
XCJC = 0.082903 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K
Package Equivalent Circuit:
L1 = 0.762 nH
C
4
C
1
L
B
2
C
6
B’
C
Transistor
Chip
E’
2
E
C’
C
3
L
1
L
3
C
C
5
EHA07524
L
= 0.706 nH
2
= 0.382 nH
L
3
= 62 fF
C
1
= 84 fF
C
2
= 180 fF
C
3
= 7
C
4
C C
5 6
= =
40 48
fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
Aug-09-20014
Page 5
BFR181T
Total power dissipation P
200
mW
160
140
tot
P
120
100
80
60
40
20
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
3
10
thJS
R
2
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005 0
thJS
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
/ P
totmax
P
1
10
= f (tp)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
Aug-09-20015
Page 6
BFR181T
Collector-base capacitance Ccb = f (VCB) f = 1MHz
0.4
pF
0.3
cb
0.25
C
0.2
0.15
0.1
0.05
Transition frequency fT = f (IC)
VCE = Parameter
9
GHz
7
6
T
f
5
4
3
2
1
10V 8V
5V
3V
2V
1V
0.7V
0
0 5 10 15
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
= Parameter
V
CE
22
dB
16
G
13
10
V
25
V
CB
0
0 5 10
mA
20
I
C
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
= Parameter
V
CE
15
10V
5V
3V
2V
1V
G
dB
ma
9
6
3
10V 5V
3V
2V
1V
0.7
7
0 4 8 12
mA
0.7V
I
C
20
0
0 4 8 12
mA
20
I
C
Aug-09-20016
Page 7
BFR181T
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):--------­f = Parameter
22
IC=5mA
dB
0.9GHz
18
16
G
14
12
10
8
0.9GHz
1.8GHz
1.8GHz
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
= Parameter, f = 900MHz
V
CE
dBm
3
IP
22
14
2V
10
1V
6
2
8V
5V
3V
6
0 3 6
Power Gain Gma, Gms = f(f)
V
= Parameter
CE
45
IC=5mA
dB
35
30
G
25
20
15
10
5
V
12
V
CE
-2
0 5 10
mA
20
I
C
Power Gain |S21|2= f(f)
VCE = Parameter
25
IC=5mA
dBm
15
21
S
10
10V 5V 1V
5
0
10V
5V
1V
0
0 1 2 3 4 5
GHz
-5
7
0 1 2 3 4 5
f
GHz
7
f
Aug-09-20017
Page 8
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