Datasheet BFQ67W Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ67W

NPN 8 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

PINNING

PIN DESCRIPTION

Code: V2
1 base
2 emitter
3 collector

handbook, 2 columns

3

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323
envelope.

12

Top view

MBC870

It is designed for wideband
applications such as satellite TV

Fig.1 SOT323.

tuners and RF portable
communications equipment up to
2 GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

f

T

G

UM

F noise figure I

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−10 V
DC collector current −−50 mA
total power dissipation up to Ts=118°C; note 1 −−300 mW
DC current gain IC= 15 mA; VCE= 5 V; Tj=25°C 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 2 GHz;

T

=25°C

amb

maximum unilateral power gain Ic= 15 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

= 5 mA; VCE= 8 V; f = 1 GHz − 1.3 − dB

c

− 8 − GHz

− 13 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CEO
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
DC collector current − 50 mA
total power dissipation up to Ts=118°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

September 1995 2

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to
soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

=25°C, unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure Γ

collector cut-off current IE= 0; VCB=5 V −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 2 GHz;

T

amb

maximum unilateral power gain
(note 1)

IC= 15 mA; VCE= 8 V; f = 1 GHz
T

amb

I

C

T

amb
s

f=1GHz

Γ

s

f=1GHz

Γ

s

f=2GHz
I

C

f = 2 GHz; Zs=60Ω

Γ

s

f=2GHz
I

C

f = 2 GHz; Zs=60Ω

up to Ts=118°C; note 1 190 K/W

− 8 − GHz

=25°C

− 13 − dB

=25°C

= 15 mA; VCE= 8 V; f = 2 GHz;

− 8 − dB

=25°C

= Γ

= Γ

= Γ

= 5 mA; VCE=8 V;

= Γ

= 5 mA; VCE=8 V;

= 5 mA; VCE=8 V;

opt;IC

= 15 mA; VCE=8 V;

opt;IC

= 5 mA; VCE=8 V;

opt;IC

= 15 mA; VCE=8 V;

opt;IC

− 1.3 − dB

− 2 − dB

− 2.2 − dB

− 2.5 − dB

− 2.7 − dB

− 3 − dB

Note

1. G

is the maximum unilateral power gain, assuming S12is zero and

UM

2

S

G

UM

--------------------------------------------------------------

10 log



1S

–



21

2



–

1S



11

22

dB.=

2

September 1995 3

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Fig.2 Power derating curve.

MRC045- 1

o

Ts(

C)

120

handbook, halfpage

h

FE

80

40

0

0

VCE= 5 V; Tj=25°C.

20 40

MBB301

I (mA)

C

Fig.3 DC current gain as a function of collector

current.

60

0.8

handbook, halfpage

C

re

(pF)

0.6

0.4

0.2

0

04812

IC= 0; f= 1 MHz.

MRC039

V (V)

CB

Fig.4 Feedback capacitance as a function of

collector-base voltage.

September 1995 4

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

01020 40

VCE= 8 V; f = 2 GHz; T

amb

=25°C.

30

Fig.5 Transition frequency as a function of

collector current.

MBB303

I (mA)

C

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.

= maximum available

max

20

handbook, halfpage

gain

(dB)

15

10

5

0

0 5 10 15 20 25 30 35

VCE= 8 V; f = 1 GHz; T

amb

=25°C.

Fig.6 Gain as a function of collector current.

MRC042

MSG
G

max

G

IC(mA)

UM

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

IC= 5 mA; VCE= 8 V; T

Fig.7 Gain as a function of frequency.

MSG

G

10

amb

UM

−1

=25°C.

MRC040

G

max

110

f (GHz)

G

max

f (GHz)

MRC041

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

IC= 15 mA; VCE= 8 V; T

MSG

G

10

amb

UM

−1

=25°C.

110

Fig.8 Gain as a function of frequency.

September 1995 5

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

IC= 30 mA; VCE= 8 V; T

Fig.9 Gain as a function of frequency.

MSG

G

10

UM

−1

amb

=25°C.

MRC043

G

max

110

f (GHz)

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

handbook, halfpage

4

F

(dB)

3

2

1

0

11010

VCE= 8 V; f = 1 GHz.

I

(mA)

C

Fig.10 Minimum noise figure as a function of

collector current.

MRC044

2

handbook, full pagewidth

IC= 5 mA; VCE= 8 V;
f = 1 GHz; Z

=50Ω.

o

180°

90°

1

135°

0

−135°

0.5

F

= 1.5 dB

0.2

0.2 0.5 1 2 5

0.2

F = 3 dB

0.5

min

F = 2 dB

F = 2.5 dB

1

−90°

Fig.11 Noise circle.

opt

1.0

45°

2

5

5

2

−45°

MRC046

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 6

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

handbook, full pagewidth

IC= 15 mA; VCE= 8 V; Zo=50Ω.

90°

1

180°

135°

0

−135°

0.2

0.2

0.2

0.5

3 GHz

0.5 1 2 5

0.5

1

−90°

2

40 MHz

2

45°

−45°

Fig.12 Common emitter input reflection coefficient (S11).

5

5

MRA047

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

IC= 15 mA; VCE= 8 V.

90°

135°

40 MHz

180°

50 40 30 20 10

−135°

3 GHz

−90°

45°

0°

−45°

MRC048

Fig.13 Common emitter forward transmission coefficient (S21).

September 1995 7

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

handbook, full pagewidth

IC= 15 mA; VCE= 8 V.

90°

135°

180°

0.5 0.4 0.3 0.2 0.1

−135°

3 GHz

40 MHz

−90°

45°

0°

−45°

MRC049

Fig.14 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

IC= 15 mA; VCE= 8 V; Zo=50Ω.

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5

0.2

0.5

3 GHz

1

−90°

2

2

45°

5

40 MHz

5

−45°

MRC050

Fig.15 Common emitter output reflection coefficient (S22).

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

September 1995 8

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

0.4

0.3

cD

p

0.25

2.2

0.10

1.8

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

mm

A

1.1

0.8

OUTLINE
VERSION

SOT323 SC-70

September 1995 9

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 10