Datasheet BFQ34-01 Datasheet (Philips)

DATA SH EET

Product specification
File under Discrete Semiconductors, SC14

September 1995

DISCRETE SEMICONDUCTORS

BFQ34

NPN 4 GHz wideband transistor

September 1995 2

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

DESCRIPTION

NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.

It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.

PINNING

PIN DESCRIPTION

Code: BFQ34/01
1 collector
2 emitter
3 base
4 emitter

Fig.1 SOT122A.

fpage

Top view

MBK187

31

2

4

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

collector-base voltage open emitter − 25 V

V

CEO

collector-emitter voltage open base − 18 V

I

C

collector current − 150 mA

P

tot

total power dissipation up to Tc = 160 °C − 2.7 W

f

T

transition frequency IC = 150 mA; VCE = 15 V; f = 500 MHz 4 − GHz

V

o

output voltage IC = 120 mA; VCE = 15 V; RL =75Ω;

T

amb

= 25 °C; dim= −60 dB

f

(p+q-r)

= 793.25 MHz

1.2 − V

P

L1

output power at 1 dB gain
compression

IC = 120 mA; VCE = 15 V; RL =75Ω;
f = 800 MHz; T

amb

= 25 °C

26 − dBm

ITO third order intercept point I

C

= 120 mA; VCE = 15 V; RL =75Ω;

T

amb

= 25 °C

45 − dBm

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 3

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 25 V

V

CEO

collector-emitter voltage open base − 18 V

V

EBO

emitter-base voltage open collector − 2V

I

C

DC collector current − 150 mA

P

tot

total power dissipation up to Tc = 160 °C − 2.7 W

T

stg

storage temperature −65 150 °C

T

j

junction temperature − 200 °C

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-c

thermal resistance from junction to case 15 K/W

September 1995 4

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

CHARACTERISTICS

T

j

= 25 °C unless otherwise specified.

Notes

1. Measured with grounded emitter and base.

2. G

UM

is the maximum unilateral power gain, assuming S12 is zero and

3. d

im

= −60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 Ω; T

amb

= 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO−6 dB; fq = 803.25 MHz;
Vr = VO−6 dB; fr = 805.25 MHz;
measured at f

(p+q−r)

= 793.25 MHz.

4. IC = 120 mA; VCE = 15 V; T

amb

= 25 °C; RL = 75 Ω;

measured at f = 800 MHz.

5. IC = 120 mA; VCE = 15 V; RL = 75 Ω;T

amb

= 25 °C;
Pp = ITO − 6 dB; fp = 800 MHz;
Pq = ITO − 6 dB; fq = 801 MHz;
measured at f

(2q−p)

= 802 MHz and at f

(2p−q)

= 799 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector cut-off current IE = 0; VCB = 15 V −−100 µA

h

FE

DC current gain IC = 75 mA; VCE = 15 V 25 70 −

I

C

= 150 mA; VCE = 15 V 25 70 −

f

T

transition frequency IC = 75 mA; VCE = 15 V; f = 500 MHz 3 3.5 − GHz

I

C

= 150 mA; VCE = 15 V;

f = 500 MHz

3.5 4 − GHz

C

c

collector capacitance IE = 0; VCB = 15 V; f = 1 MHz − 2 2.75 pF

C

e

emitter capacitance IC = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF

C

re

feedback capacitance IC = 10 mA; VCE = 15 V; f = 1 MHz;

T

amb

=25°C

− 1 1.35 pF

C

c-s

collector-stud capacitance note 1 − 0.8 − pF

F noise figure (see Fig.2) I

C

= 120 mA; VCE = 15 V;

f = 500 MHz; T

amb

=25°C

− 8 − dB

G

UM

maximum unilateral power gain
(note 2)

IC = 120 mA; VCE = 15 V;
f = 500 MHz; T

amb

=25°C

− 16.3 − dB

V

o

output voltage Figs 2 and 7 and note 3 − 1.2 − V

P

L1

output power at 1 dB gain
compression (see Fig.2)

note 4 − 26 − dBm

ITO third order intercept point (see Fig.2) note 5 − 45 − dBm

G

UM

10

S

21

2

1S

11

2

–





1S

22

2

–





--------------------------------------------------------------

dB.log=

September 1995 5

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

Fig.2 Intermodulation distortion MATV test circuit.

f = 40 to 860 MHz; L1 = L2 = 5 µHFerroxcube coil.

handbook, halfpage

MEA322

2.2 nF

L1

10 nF

input
75 Ω

L2

2.2 nF

10 nF

DUT

output

75 Ω

V

CC

V

BB

10 nF

200

24

0.68 pF

Ω

Ω

24

Ω

Fig.3 DC current gain as a function of collector

current.

VCE= 15 V; Tj=25°C.

handbook, halfpage

0

120

80

40

0

40 80 160

MBB361

120

I (mA)

C

FE

h

Fig.4 Collector capacitance as a function of

collector-base voltage.

IE= 0; f = 1 MHz; Tj=25°C.

handbook, halfpage

MEA320

0

6

4

2

0

10 20

V (V)

CB

C

c

(pF)

Fig.5 Transition frequency as a function of

collector current.

VCE= 15 V; f = 500 MHz; Tj=25°C.

handbook, halfpage

0 40 80 160

8

6

2

0

4

MBB357

120

I (mA)

C

(GHz)

T

f

September 1995 6

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

Fig.6 Gain as a function of frequency.

Ic= 120 mA; VCE= 15 V; T

amb

=25°C.

handbook, halfpage

MEA319

40

0

20

30

10

–1

110

10

f (GHz)

gain
(dB)

G

UM

Is I

12

2

Fig.7 Intermodulation distortion as a function of

collector current.

Vo= 1.2 V; VCE= 15 V; f

(p+q−r)

= 793.25 MHz

handbook, halfpage

50 150

20

70

60

MEA321

50

40

30

100

d

im

(dB)

I (mA)

C

September 1995 7

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

handbook, full pagewidth

MEA315

0.2

0.5

1

2

5

10

0.2

0.5

1

2

5

10

0

+ j

– j

800

200

∞

10.2 10520.5

1200 MHz

1000

500

Fig.8 Common emitter input reflection coefficient (S11).

Ic= 120 mA; VCE= 15 V; T

amb

=25°C.

Z

o

=50Ω.

handbook, full pagewidth

MEA317

+ ϕ

− ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

200 MHz

500

51015

800
1000
1200

Fig.9 Common emitter forward transmission coefficient (S21).

Ic= 120 mA; VCE= 15 V; T

amb

=25°C.

September 1995 8

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

handbook, full pagewidth

MEA318

+ ϕ

− ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

500

800

1000

1200

0.1 0.2

200 MHz

Fig.10 Common emitter reverse transmission coefficient (S12).

Ic= 120 mA; VCE= 15 V; T

amb

=25°C.

handbook, full pagewidth

MEA316

0.2

0.5

1

2

5

10

0.2

0.5

1

2

5

10

0

+ j

– j

∞

10.2 10520.5

1200

1000

800

500

200 MHz

Fig.11 Common emitter output reflection coefficient (S22).

Ic= 120 mA; VCE= 15 V; T

amb

=25°C.

Zo=50Ω.

September 1995 9

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

PACKAGE OUTLINE

UNIT

A

D

1

W

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

8-32
UNC

α

90°

SOT122A

97-04-18

H
b

H

L

detail X

D

b

5.85

5.58

0.18

0.14

5.97

4.74

cM

1

M

1.02

NN

3

11.82

11.04

w

1

0.381

Q

3.38

2.74

3.86

2.92

H

27.56

25.78

9.91

9.14

3.18

2.66

1.66

1.39

7.50

7.23

6.48

6.22

7.24

6.93

L

N

1

max.

0 5 10 mm

scale

D

2

M

ceramic
BeO

metal

W

Q

A

N

N

1

N

3

M

1

D

c

X

1

4

3

2

Studded ceramic package; 4 leads SOT122A

α

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

A

w

1

A

M

D

1

D

2

September 1995 10

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.