Datasheet BFQ270 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ270

NPN 6 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

FEATURES

• High power gain

• Emitter-ballasting resistors for

good thermal stability

• Gold metallization ensures
excellent reliability.

DESCRIPTION

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

age

4

3

1

Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All

Top view

2

MBC869

leads are isolated from the mounting
base.

It is primarily intended for use in
MATV and CATV amplifiers.

Fig.1 SOT172A1.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

f

T

G

UM

V

O

collector-base voltage open emitter −−25 V
collector-emitter voltage open base −−19 V
DC collector current −−500 mA
total power dissipation up to Tc = 100 °C −−10 W
DC current gain IC = 240 mA; VCE = 18 V; Tj = 25 °C60−−
transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz;

T

= 25 °C

amb

maximum unilateral power gain IC = 240 mA; VCE = 18 V;

f = 800 MHz; T

amb

= 25 °C

output voltage dim = −60 dB; IC= 240 mA;

− 6 − GHz

− 10 − dB

− 1.6 − V

VCE = 18 V; RL = 75 Ω;
f

= 793.25 MHz

(p+q-r)

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 2

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-c

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 19 V
emitter-base voltage open collector − 2V
DC collector current − 500 mA
total power dissipation up to Tc = 100 °C − 10 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to case 10 K/W

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h
C
C
C
C
f

T

G

V
d

FE

c
e
re
cs

UM

O
2

collector cut-off current IE = 0; VCB = 18 V −−100 µA
DC current gain IC = 240 mA; VCE = 18 V 60 110 −
collector capacitance IE = ie = 0; VCB = 18 V; f = 1 MHz − 3.6 − pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF
feedback capacitance IC = 0; VCB = 18 V; f = 1 MHz 2 2.6 − pF
collector-stud capacitance − 1.2 − pF
transition frequency IC = 240 mA; VCE = 18 V; f = 1 GHz;

T

= 25 °C

amb

maximum unilateral power gain
(note 1)

IC = 240 mA; VCE = 18 V;
f = 500 MHz; T

I

= 240 mA; VCE = 18 V; f = 1 GHz;

C

T

= 25 °C

amb

amb

= 25 °C

4.5 6 − GHz

− 16 − dB

− 10 − dB

output voltage note 2 − 1.6 − V
second order intermodulation

note 3 −−50 − dB

distortion

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero and

UM

2. dim = −60 dB (DIN 45004); IC = 240 mA; VCE = 18 V; RL = 75 Ω;

=

G

UM

--------------------------------------------------------------

10 log



1

S

–



2

S

21

2



1

S

–



11

22

dB

2

Vp = VO;fp = 795.25 MHz;
Vq = VO−6 dB; fq = 803.25 MHz;
Vr = VO−6 dB; fr = 805.25 MHz;
measured at f

= 793.25 MHz.

(p+q−r)

3. IC = 240 mA; VCE = 18 V; RL = 75 Ω;

Vp= Vq = VO = 50.5 dBmV = 335 mV;
f

= 810 MHz; fp = 250 MHz; fq= 560 MHz.

(p+q)

˙

September 1995 3

Philips Semiconductors Product specification

,

NPN 6 GHz wideband transistor BFQ270

L2

MBB488

V

CC

(1)

C8

C5 L6

C9

output

n–75 Ω

C6

handbook, full pagewidth

input

n–75 Ω

(1) +Vcis equivalent to VCE=Vc−Ic(A) ×17.

C1

V

bias

C7

R6

C2L1

L2

L1

R5

L3

C3

R1

C4

L4

L5

DUT

R2 R3 R4

Fig.2 Intermodulation and second order intermodulation distortion test circuit.

List of components (see test circuit)

DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 miniature ceramic plate capacitor 0.82 pF 2222 680 03827
C2, C5, C7, C8 multilayer ceramic capacitor 10 nF 2222 852 47103
C3 multilayer ceramic chip capacitor 2.2 pF 2222 855 12228
C4 (note 1) miniature ceramic plate capacitor 1 nF 2222 630 08102
C6 miniature ceramic plate capacitor 1.2 pF 2222 680 03128
C9 electrolytic capacitor 4.7 µF 2222 014 28478
L1 (note 1) 4.5 turns loosely wound 0.4 mm

enamelled copper wire

≈35 nH internal coil diameter

2 mm
L2 Ferroxcube choke 5 µH 3122 108 20153
ML1, ML6 microstripline 75 Ω width 2.46 mm;

length 9 mm
ML2, ML5 microstripline 75 Ω width 2.46 mm;

length 22 mm
ML3, ML4 microstripline 145 Ω width 0.5 mm;

length 12 mm
R1, R2, R3, R4 metal film resistor 68 Ω type MR25 2322 151 76819
R5 (note 1) metal film resistor 240 Ω type SFR16T 2322 180 73241
R6 metal film resistor 10 kΩ type SFR16T 2322 180 73103

Note

1. Components C4, L1, and R5 are mounted in a cavity in the brass ground plate.

The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant

= 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers’ RT/Duroid 5880).

of (ε

r

September 1995 4

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

V

V

bias

R6

C7

R5

R3 R4

L1

C4

C9

CC

C8

L2

handbook, full pagewidth

input

n–75 Ω

L1

C2

C1

copper straps

L4L3

L2

C3

R2

R1

80 mm

L5

C5

C6

L6

MBB487

output

n–75 Ω

mounting screw

(4 x M2.5)

Fig.3 Intermodulation test circuit printed circuit board.

September 1995 5

70 mm

MBB486

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

14

handbook, halfpage

P

tot

(W)

12

8

4

0

0 50 100 200

150

T

case

Fig.4 Power derating curve.

MRA747

(oC)

150

handbook, halfpage

h

FE

100

50

0

0

VCE= 18 V; Tj=25°C.

100 500200 300 400

MRA746

IC (mA)

Fig.5 DC current gain as a function of collector

current.

handbook, halfpage

5

C

re

(pF)

4

3

2

1

0

020

ic = 0; f = 1 MHz.

4 8 12 16

MRA736

VCB (V)

Fig.6 Feedback capacitance as a function of

collector-base voltage.

September 1995 6

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

0 100 500

f = 1 GHz; T

amb

=25°C.

200 300 400

V

CE =

Fig.7 Transition frequency as a function of

collector current.

MRA741

18 V

12 V

IC (mA)

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

0 200

VCE= 12 V.

G

max

G

UM

G

UM

G

max

400 600

Fig.8 Gain as a function of collector current.

500 MHz

1 GHz

IC (mA)

MRA743

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

0 200

VCE= 18 V.

MSG

G
G

G

G

max

UM

UM

max

400 600

Fig.9 Gain as a function of collector current.

MRA745

500 MHz

1 GHz

IC (mA)

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

Ic= 240 mA; VCE= 12 V.

MSG

G

UM

G

max

−1

10

110

MRA744

f (GHz)

Fig.10 Gain as a function of frequency.

September 1995 7

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

−2

10

Ic= 240 mA; VCE= 18 V.

Fig.11 Gain as a function of frequency.

MSG

MRA742

G

UM

G

max

−1

10

110

f (GHz)

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

−30

handbook, halfpage

d

im

MRA739

(dB)

−40

−50

−60

−70

75 125 175

225

IC (mA)

3-tone dim;(VCE= 18 V);

= 445.25 MHz; Vo= 65.11 dBmV (1.8 V);

f

p

= 453.25 MHz; Vo= 59.11 dBmV;

f

q

= 455.25 MHz; Vo= 59.11 dBmV;

f

r

= 443.25 MHz.

f

(p+q-r)

Fig.12 Intermodulation distortion as a function of

collector current.

275

−30

handbook, halfpage

d

im

MRA740

(dB)

−40

−50

−60

−70

75 125 175

225

IC (mA)

3-tone dim;(VCE= 18 V);

= 795.25 MHz; Vo= 64.08 dBmV (1.6 V);

f

p

= 803.25 MHz; Vo= 58.08 dBmV;

f

q

= 805.25 MHz; Vo= 58.08 dBmV;

f

r

= 793.25 MHz.

f

(p+q-r)

Fig.13 Intermodulation distortion as a function of

collector current.

275

−30

handbook, halfpage

d

2

MRA738

(dB)

−40

−50

−60

−70

−80

75 325

125 175 225 275

IC (mA)

VCE= 18 V;

= 50 MHz; Vo= 50.5 dBmV (0.335 V);

f

p

= 400 MHz; Vo= 50.5 dBmV;

f

q

= 450 MHz.

f

(p+q)

Fig.14 Second order intermodulation distortion as

a function of collector current.

−30

handbook, halfpage

d

2

MRA737

(dB)

−40

−50

−60

−70

−80

75 325

125 175 225 275

IC (mA)

VCE= 18 V;

= 250 MHz; Vo= 50.5 dBmV (0.335 V);

f

p

= 560 MHz; Vo= 50.5 dBmV;

f

q

= 810 MHz.

f

(p+q)

Fig.15 Second order intermodulation distortion as

a function of collector current.

September 1995 8

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

handbook, full pagewidth

Ic= 240 mA; VCE= 18 V.

=50Ω.

Z

o

1

0.5
3 GHz

0.2

+ j

0

– j

0.2
40 MHz

0.5

10.2 10520.5

1

2

2

Fig.16 Common emitter input reflection coefficient (S11).

5

10

∞

10

5

MBB484

handbook, full pagewidth

Ic= 240 mA; VCE= 18 V.

90°

60°

30°

0°

30°

60°

MBB482

180°

150°

150°

40 MHz

40 2050 30 10

120°

120°

3 GHz

90°

Fig.17 Common emitter forward transmission coefficient (S21).

+ ϕ

− ϕ

September 1995 9

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

handbook, full pagewidth

Ic= 240 mA; VCE= 18 V.

90°

120°

150°

60°

30°

3 GHz

+ ϕ

180°

0.4 0.20.5 0.3 0.1

150°

120°

40 MHz

90°

0°

− ϕ

30°

60°

MBB483

Fig.18 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth

Ic= 240 mA; VCE= 18 V.
Zo=50Ω.

1

0.5

0.2

+ j

0

– j

0.2

0.5

3 GHz

10.2 10520.5

40 MHz

1

2

2

MBB485

Fig.19 Common emitter output reflection coefficient (S22).

5

10

∞

10

5

September 1995 10

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT172A1

D

A

Q

D

N

2

N

N

3

1

D

2

A

w

M

1

X

c

A

M

M

1

W

H

b

4

b

1

H

1

3

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A W

3.31

3.04

0.130

0.120

0.89

0.63

0.035

0.025

5.31

4.34

0.209

0.171

c

b

1

0.16

0.10

0.006

0.004

Db

5.20

4.95

0.205

0.195

D

5.33

5.08

0.210

0.200

D

2

1

5.33

26.17

5.08

24.63

1.03

0.210

0.97

0.200

MH

3.05

2.79

0.12

0.11

M

1.66

1.39

0.065

0.055

1

N

11.82

10.89

0.465

0.429

N

2

8.89

6.90

0.350

0.272

N

3

3.69

2.92

0.145

0.115

detail X

Q

2.90

2.31

0.114

0.091

8-32
UNC

w

0.38

0.015

1

OUTLINE

VERSION

SOT172A1

IEC JEDEC EIAJ

REFERENCES

September 1995 11

EUROPEAN

PROJECTION

ISSUE DATE

97-06-28

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFQ270

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 12