Datasheet BFQ251A, BFQ251 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 Oct 02

1998 Oct 06

DISCRETE SEMICONDUCTORS

BFQ251

PNP video transistor

ook, halfpage

M3D186

1998 Oct 06 2

Philips Semiconductors Product specification

PNP video transistor BFQ251

FEATURES

• High breakdown voltages

• Low output capacitance

• High gain bandwidth

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Buffer/driver in high-resolution
colour graphics monitors.

DESCRIPTION

PNP video transistor in a SOT54
(TO-92) plastic package.
NPN complement: BFQ231.

PINNING

PIN DESCRIPTION

1 base
2 collector
3 emitter

Fig.1 Simplified outline

(SOT54; TO-92).

age

1

3

2

MSB033

QUICK REFERENCE DATA

Note

1. T

s

is the temperature at the soldering point of the collector pin, 4 mm from the body.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. T

s

is the temperature at the soldering point of the collector pin, 4 mm from the body.

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

collector-base voltage open emitter −−−100 V

V

CER

collector-emitter voltage RBE= 100 Ω −−−95 V

I

C

collector current (DC) −−−300 mA

P

tot

total power dissipation Ts≤ 65 °C; note 1 −−1W

h

FE

DC current gain IC= −50 mA; VCE= −10 V 20 30 −

f

T

transition frequency IC= −50 mA; VCE= −10 V; T

amb

=25°C 1 1.3 − GHz

SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter −−100 V

V

CEO

collector-emitter voltage open base −−65 V

V

CER

collector-emitter voltage RBE= 100 Ω−−95 V

V

EBO

emitter-base voltage open collector −−3V

I

C

collector current (DC) −−300 mA

P

tot

total power dissipation Ts≤ 65 °C; notes 1 and 2; see Fig.3 − 1W

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

1998 Oct 06 3

Philips Semiconductors Product specification

PNP video transistor BFQ251

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 85 K/W

R

th j-a

thermal resistance from junction to ambient 185 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage IC= −0.1 mA; IE=0 −100 −−V

V

(BR)CEO

collector-emitter breakdown voltage IC= −10 mA; IB=0 −65 −−V

V

(BR)CER

collector-emitter breakdown voltage IC= −10 mA; RBE= 100 Ω−95 −−V

V

(BR)EBO

emitter-base breakdown voltage IE= −0.1 mA; IC=0 −3 −−V

I

CES

collector-emitter cut-off current IB= 0; VCE= −50 V −−−100 µA

I

CBO

collector-base cut-off current IE= 0; VCB= −50 V −−−20 µA

h

FE

DC current gain IC= −50 mA; VCE= −10 V; see Fig.4 20 30 −

C

cb

collector-base capacitance IC=ic= 0; VCB= −10 V; f = 1 MHz;

see Fig.5

− 2 − pF

f

T

transition frequency IC= −50; VCE= −10 V; see Fig.6 1 1.3 − GHz

Fig.2 DC SOAR.

T

amb

=25°C.

handbook, halfpage

0 −40 −100

−400

−300

−100

0

−200

MEA232 - 1

−20 −60 −80

I

C

(mA)

V

CEO

(V)

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

0.8

0.6

0.2

0

0.4

MEA228 - 1

150

1.0

1.2

Ts (oC)

P

tot

(W)

1998 Oct 06 4

Philips Semiconductors Product specification

PNP video transistor BFQ251

Fig.4 DC current gain as a function of collector

current; typical values.

VCE= −10V; T

amb

=25°C.

handbook, halfpage

0

20

0 −100 −200 −300

MEA231

40

30

10

h

FE

IC (mA)

f = 1 MHz; T

amb

=25°C.

Fig.5 Collector-base capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

0

2

0

−10 −20 −40

MEA229

−30

6

4

C

cb

(pF)

VCB (V)

VCE= −10 V; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current; typical values.

handbook, halfpage

0

1.5

1

0.5

0

−50 −100 −150

IC (mA)

f

r

(GHz)

MBK897

1998 Oct 06 5

Philips Semiconductors Product specification

PNP video transistor BFQ251

PACKAGE OUTLINE

UNIT

A

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

5.2

5.0

b

0.48

0.40

c

0.45

0.40

D

4.8

4.4

d

1.7

1.4

E

4.2

3.6

L

14.5

12.7

e

2.54

e

1

1.27

L

1

(1)

2.5

b

1

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43

97-02-28

A L

0 2.5 5 mm

scale

b

c

D

b

1

L

1

d

E

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e

1

e

1

2

3

1998 Oct 06 6

Philips Semiconductors Product specification

PNP video transistor BFQ251

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Oct 06 7

Philips Semiconductors Product specification

PNP video transistor BFQ251

NOTES

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Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 125102/00/04/pp8 Date of release: 1998 Oct 06 Document order number: 9397 750 04569