Datasheet BFQ231A Datasheet (Philips)

查询BFQ231供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ231; BFQ231A

NPN video transistors

Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05

1997 Oct 02

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

FEATURES

• High breakdown voltages

• Low output capacitance

• High gain bandwidth

DESCRIPTION

NPN video transistor in a SOT54
(TO-92) plastic package.
PNP complements: BFQ251 and
BFQ251A.

age

1

2

3

• Good thermal stability

• Gold metallization ensures

excellent reliability.

PINNING

MSB033

PIN DESCRIPTION

APPLICATIONS

• Buffer/driver in high-resolution
colour graphics monitors.

1 base
2 collector
3 emitter

Fig.1 Simplified outline

(SOT54; TO-92).

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

collector-base voltage open emitter

BFQ231 −−100 V
BFQ231A −−115 V

V

CER

collector-emitter voltage RBE= 100 Ω

BFQ231 −−95 V
BFQ231A −−110 V

I

C

P

tot

h

FE

f

T

collector current (DC) −−300 mA
total power dissipation Ts≤ 65 °C; note 1 −−1W
DC current gain IC= 50 mA; VCE= 10 V 20 35 −
transition frequency IC= 50 mA; VCE= 10 V; T

amb

=25°C
BFQ231 1 1.4 − GHz
BFQ231A 0.8 1.2 − GHz

Note

is the temperature at the soldering point of the collector pin, 4 mm from the body.

1. T

s

1997 Oct 02 2

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CER

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter

BFQ231 − 100 V
BFQ231A − 115 V

collector-emitter voltage open base

BFQ231 − 65 V
BFQ231A − 95 V

collector-emitter voltage RBE= 100 Ω

BFQ231 − 95 V

BFQ231A − 110 V
emitter-base voltage open collector − 3V
collector current (DC) − 300 mA
total power dissipation Ts≤ 65 °C; notes 1 and 2; see Fig.3 − 1W
storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

is the temperature at the soldering point of the collector pin, 4 mm from the body.

1. T

s

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R
R

th j-s
th j-a
th s-a

thermal resistance from junction to soldering point note 1 85 K/W
thermal resistance from junction to ambient 185 K/W
thermal resistance from soldering point to ambient 100 K/W

Note

1. Ts is the temperature at the soldering point of the collector pin.

1997 Oct 02 3

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)CER

V

(BR)EBO

I

CES

I

CBO

h

FE

C

cb

f

T

collector-base breakdown voltage IC= 0.1 mA; IE=0

BFQ231 100 −−V
BFQ231A 115 −−V

collector-emitter breakdown voltage IC= 10 mA; IB=0

BFQ231 65 −−V
BFQ231A 95 −−V

collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω

BFQ231 95 −−V

BFQ231A 110 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-emitter cut-off current IB= 0; VCE=50V −−100 µA
collector-base cut-off current IE= 0; VCB=10V −−20 µA
DC current gain IC= 50 mA; VCE= 10 V; see Fig.4 20 35 −
collector-base capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz;

− 1.8 − pF

see Fig.5

transition frequency IC= 50 mA; VCE= 10 V; see Fig.6

BFQ231 1 1.4 − GHz

BFQ231A 0.8 1.2 − GHz

400

handbook, halfpage

I

C

(mA)

300

200

100

0

0 40 100

T

=25°C.

amb

20 60 80

MEA225 - 1

V

CEO

(V)

Fig.2 DC SOAR.

1997 Oct 02 4

1.2

handbook, halfpage

P

tot

(W)

1.0

0.8

0.6

0.4

0.2

0

0 50 100 200

150

Ts (oC)

Fig.3 Power derating curve.

MEA228 - 1

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

50

handbook, halfpage

h

FE

40

30

20

10

0

0 100 200 300

VCE= 10V; T

Fig.4 DC current gain as a function of

MEA227

IC (mA)

=25°C. f =1 MHz; T

amb

handbook, halfpage

Fig.5 Collector-base capacitance as a function of

collector current; typical values.

6

C

cb

(pF)

4

2

0

0

10 20 40

=25°C.

amb

collector-base voltage; typical values.

30

MEA224

VCB (V)

1.5

handbook, halfpage

f

T

(GHz)

1.0

0.5

0

0

VCE= 10V; T

amb

50

=25°C.

BFQ231

BFQ231A

100 150

Fig.6 Transition frequency as a function of

collector current; typical values.

MBB476

IC (mA)

1997 Oct 02 5

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

1997 Oct 02 6

Philips Semiconductors Product specification

NPN video transistors BFQ231; BFQ231A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 02 7

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 127027/00/03/pp8 Date of release: 1997Oct 02 Document order number: 9397 750 02881