Datasheet BFQ225 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ225

NPN video transistor

Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05

1996 Sep 04

Philips Semiconductors Product specification

NPN video transistor BFQ225

APPLICATIONS

• Primarily intended for cascode

handbook, halfpage

output and buffer stages in high
resolution colour monitors.

DESCRIPTION

NPN silicon transistor encapsulated
in a 3-lead plastic SOT128B package.

PINNING

PIN DESCRIPTION

1 emitter
2 collector

123

MGA323

3 base

Fig.1 Simplified outline SOT128B.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
P
f
C
T

CBO

C

tot

T

re

j

collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation Tmb=25°C − 3.75 W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation Tmb=25°C; see Fig.3 − 3.75 W
storage temperature −65 +175 °C
junction temperature − 175 °C

1996 Sep 04 2

Philips Semiconductors Product specification

NPN video transistor BFQ225

3

10

handbook, halfpage

I

C

(mA)

2

10

10

10

Tmb=25°C.

2

10

Fig.2 DC SOAR.

VCE (V)

MBG486

handbook, halfpage

3

10

4

P

tot

(W)

3

2

1

0

0

VCE≤ 50V.

100 200

Tmb (

MBG487

o

C)

Fig.3 Power derating curve.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

thermal resistance from junction to

P

= 3.75 W; Tmb=25°C 40 K/W

tot

mounting base

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CER

V

(BR)EBO

I

CES

h

FE

collector-base breakdown voltage IC= 0.1 mA; IE= 0 100 −−V
collector-emitter breakdown voltage IC= 1 mA; RBE= 100 Ω 95 −−V
emitter-base breakdown voltage IC= 0; IE= 0.1 mA 3 −−V
collector-emitter leakage current VCE= 50 V; VBE=0 −−100 µA
DC current gain IC= 25 mA; VCE=10V;

20 −−

see Fig.4

f

T

transition frequency IC= 25 mA; VCE=10V;

− 1 − GHz

f = 500 MHz; see Fig.5

C

re

feedback capacitance IC= 0; VCB= 10 V; f = 1 MHz;

− 1.7 − pF

see Fig.6

1996 Sep 04 3

Philips Semiconductors Product specification

NPN video transistor BFQ225

60

handbook, halfpage

h

FE

40

20

0

0 20 100

VCE= 10 V; tp= 500 µs.

40 60 80

MBG488

IC (mA)

Fig.4 DC current gain as a function of collector

current; typical values.

1.2

handbook, halfpage

f

T

(MHz)

0.8

0.4

0

10

VCE= 10 V; f = 500 MHz.

20 50

IC (mA)

Fig.5 Transition frequency as a function of

collector current; typical values.

MBG489

2

10

handbook, halfpage

4

C

re

(pF)

3

2

1

0

02 10

f = 1 MHz.

46 8

MBG490

VCB (V)

Fig.6 Feedback capacitance as a function of

collector-base voltage; typical values.

1996 Sep 04 4

Philips Semiconductors Product specification

NPN video transistor BFQ225

PACKAGE OUTLINE

handbook, full pagewidth

2.5 max

(1)

123

10.4 max

3.8

3.6

2.542.54

3.8

2.4 max

0.8

(3x)

0.6

4.6

max

24.2
max

0.56 max

0.65 max

1.6

8.6

max

12.2
min

Dimensions in mm.

10

Fig.7 SOT128B.

MGA322

1996 Sep 04 5

Philips Semiconductors Product specification

NPN video transistor BFQ225

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 04 6