Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ222
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
Page 2
Philips Semiconductors Product specification
NPN video transistor BFQ222
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
handbook, halfpage
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT32 package.
PINNING
PIN DESCRIPTION
Top view
123
MBC077 - 1
1 emitter
2 collector
3 base
Fig.1 Simplified outline SOT32.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
I
C
P
tot
f
T
C
re
T
j
collector-base voltage open emitter − 100 V
collector current (DC) − 100 mA
total power dissipation Tmb=25°C − 5W
transition frequency IC= 25 mA; VCE=10V 1 − GHz
feedback capacitance IC= 0; VCB= 10 V 1.7 − pF
junction temperature − 175 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 100 V
collector-emitter voltage RBE= 100 Ω−95 V
emitter-base voltage open collector − 3V
collector current (DC) see Fig.2 − 100 mA
average collector current see Fig.2 − 100 mA
total power dissipation Tmb=25°C; see Fig.3 − 5W
storage temperature −65 +175 °C
junction temperature − 175 °C
1996 Sep 04 2
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Philips Semiconductors Product specification
NPN video transistor BFQ222
3
10
handbook, halfpage
I
C
(mA)
2
10
10
10
Tmb=25°C.
2
10
Fig.2 DC SOAR.
THERMAL CHARACTERISTICS
VCE (V)
MBG481
handbook, halfpage
3
10
6
P
tot
(W)
4
2
0
0
VCE≤ 50V.
100 200
Tmb (
MBG482
o
C)
Fig.3 Power derating curve.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
thermal resistance from junction to
P
=5W; Tmb=25°C 30 K/W
tot
mounting base
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
collector-base breakdown voltage IC= 0.1 mA; IE= 0 100 −−V
collector-emitter breakdown voltage IC= 1 mA; RBE= 100 Ω 95 −−V
emitter-base breakdown voltage IC= 0; IE= 0.1 mA 3 −−V
collector-emitter leakage current VCE= 50 V; VBE=0 −−100 µA
DC current gain IC= 25 mA; VCE=10V;
20 −−
see Fig.4
f
T
transition frequency IC= 25 mA; VCE=10V;
− 1 − GHz
f = 500 MHz; see Fig.5
C
re
feedback capacitance IC= 0; VCB= 10 V; f = 1 MHz;
− 1.7 − pF
see Fig.6
1996 Sep 04 3
Page 4
Philips Semiconductors Product specification
NPN video transistor BFQ222
60
handbook, halfpage
h
FE
40
20
0
0 20 100
VCE= 10 V; tp= 500 µs.
40 60 80
MBG483
IC (mA)
Fig.4 DC current gain as a function of collector
current; typical values.
1.2
handbook, halfpage
f
T
(MHz)
0.8
0.4
0
10
VCE= 10 V; f = 500 MHz.
20 50
IC (mA)
Fig.5 Transition frequency as a function of
collector current; typical values.
MBG484
2
10
handbook, halfpage
4
C
re
(pF)
3
2
1
0
02 10
f = 1 MHz.
46 8
MBG485
VCB (V)
Fig.6 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Sep 04 4
Page 5
Philips Semiconductors Product specification
NPN video transistor BFQ222
PACKAGE OUTLINE
ndbook, full pagewidth
Dimensions in mm.
4.58
2.54
max
2.7
max
3.2
3.0
(1)
1.2
0.5
0.88
max
7.8 max
123
2.29
3.75
90
11.1
max
15.3
min
o
MBC076
Fig.7 SOT32.
1996 Sep 04 5
Page 6
Philips Semiconductors Product specification
NPN video transistor BFQ222
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 04 6
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