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查询BFQ19S供应商
NPN Silicon RF Transistor
BFQ19S
For low noise, low distortion broadband
2
1
amplifiers in antenna and
3
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG 1 = B 2 = C 3 = E SOT89
Maximum Ratings
Parameter
Symbol Value Unit
2
VPS05162
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
85 °C
S
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
V
V
V
V
I
I
P
T
T
T
R
C
B
CEO
CES
CBO
EBO
tot
j
A
st
thJS
15 V
20
20
3
75 mA
10
1 W
150 °C
-65 ... 150
-65 ... 150
65
K/W
Jun-22-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFQ19S
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
V
= 20 V, VBE = 0
CE
V
= 10 V, IE = 0
CB
= 2 V, IC = 0
V
EB
= 70 mA, VCE = 8 V
I
C
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
ValuesSymbol Unit
max.min. typ.
-
-
- 100
100-
10--
40 100 220
V--15
µACollector-emitter cutoff current
nACollector-base cutoff current
µAEmitter-base cutoff current
-DC current gain
Jun-22-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFQ19S
Parameter
AC characteristics (verified by random sampling)
Transition frequency
= 70 mA, VCE = 8 V, f = 500 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
= 20 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 900 MHz
f = 1.8 GHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
4 5.5 - GHz
- 1 1.5 pF
- 0.4 -
- 4.4 -
-
-
2.5
4
dB
-
-
Power gain, maximum available 1)
= 70 mA, VCE = 8 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
= 30 mA, VCE = 8 V, ZS = ZL = 50 ,
I
C
f = 900 MHz
f = 1.8 GHz
Third order intercept point
= 70 mA, VCE = 8 V, ZS=Z
I
C
Sopt
, ZL=Z
f = 1.8 GHz
Lopt
Lopt
,
,
G
|S
IP
ma
21e
3
-
-
2
|
-
-
11.5
7
9.5
4
-
-
-
-
- 35 - dBm
1
G
= |S21 / S12| (k-(k2-1)
ma
1/2
)
Jun-22-20013
BFQ19S
Total power dissipation P
1200
mW
1000
900
800
tot
P
700
600
500
400
300
200
100
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
2
10
K/W
thJS
R
1
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
-
/ P
totmax
P
1
10
= f (tp)
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
0
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
10
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
s
10
0
tp
Jun-22-20014
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